Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, C. A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN.. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . ISSN 0021-8979

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, C. A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M. and Nafría, M.. (2012) Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, Vol.23 (No.39). Article no. 395204. ISSN 0957-4484

Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R.. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. ISSN 00262714

Gammon, P. M. (2011) Development of SiC heterojunction power devices. PhD thesis, University of Warwick.

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, P., Placidi, Marcel, Zabala, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2011) Characterisation of HfO2/Si/SiC MOS capacitors. Materials Science Forum, Vol.679-680 . pp. 674-677. ISSN 1662-9752

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Gammon, P. M., Jennings, M. R., Porti, M., Bayerl, A., Lanza, M. and Nafría, M.. (2011) Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN. Applied Physics Letters, Vol.99 (No.21). article no. 213504. ISSN 0003-6951

Pérez-Tomás, Amador, Fontserè, A., Placidi, Marcel, Baron, N., Chenot, Sébastien, Cordier, Yvon, Moreno, J.C., Gammon, P. M. and Jennings, Michael R. (2011) Ohmic contact resistance to GaN devices dependence with on temperature for GaN devices. In: 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Oslo, Norway, Aug 29 - Sep 2, 2010. Published in: Materials Science Forum, Vol. 679-680 pp. 816-819.

Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R.. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. ISSN 0167-9317

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. ISSN 0003-6951

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E. (Susan E.), Wilson, Neil Richard, 1977-, Roberts, G. J., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. ISSN 0021-8979

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892.

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J. and Hammond, R. (2010) Si on SiC, a novel platform for MOS power devices. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A., 1973- and Mawby, P. A. (Philip A.) (2010) Silicon-on-SiC, a novel semiconductor structure for power devices. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 1243-1246.

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. ISSN 0021-8979

Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., 1973-, Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.). (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. ISSN 0003-6951

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, Vishal Ajit, Burrows, S. E. (Susan E.), Wilson, Neil Richard, 1977-, Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. ISSN 0003-6951

Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E. (Susan E.), Gammon, P. M., Lodzinski, M., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. ISSN 1099-0062

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N.. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Vol.85 (No.4). pp. 704-709. ISSN 0167-9317

Jennings, M. R., Pérez-Tomás, Amador, Gammon, P. M., Davis, M., Chow, T. P. and Mawby, P. A. (Philip A.) (2008) Layered metal and highly doped MBE Si contacts for 4H-SiC power devices. In: 9th International Seminar on Power Semiconductors (ISPS 2008) , Prague, Czech Republic, Aug 27-29, 2008. Published in: IET Digest, Vol.2008 (No.2). pp. 69-72.