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Group by: Official Date | Item Type | Funder | No Grouping
Jump to: 2017 | 2016 | 2015 | 2014 | 2013
Number of items: 9.

2017

Alexakis, Petros (2017) Reliability of wide bandgap semiconductor devices under unconventional mode conduction. PhD thesis, University of Warwick.

2016

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (2016) Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4). pp. 2092-2102. doi:10.1109/TIE.2015.2500187 ISSN 0278-0046.

2015

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Analysis of power device failure under avalanche mode conduction. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 1833-1839. ISBN 9788957082546. doi:10.1109/ICPE.2015.7168028 ISSN 2150-6078 .

Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792 ISSN 0885-8993.

Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. doi:10.1109/TIE.2014.2326999 ISSN 0278-0046.

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) pp. 1-9. doi:10.1109/EPE.2015.7309180

2014

Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2014) Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2817-2823. ISBN 9781479957767. doi:10.1109/ECCE.2014.6953780 ISSN 2329-3721 .

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ran, Li and Mawby, P. A. (2014) Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs. IEEE Transactions on Electron Devices, Volume 61 (Number 7). pp. 2278-2286. doi:10.1109/TED.2014.2323152 ISSN 0018-9383.

2013

Alexakis, Petros, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2013) Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes. In: Power Electronics and Applications (EPE), 2013 15th European Conference on, Lille, France, 2-6 Sep 2013. Published in: 2013 15th European Conference on Power Electronics and Applications (EPE) pp. 1-9. doi:10.1109/EPE.2013.6631758

This list was generated on Sat Jun 3 12:11:27 2023 BST.
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