Number of items: 6.
2024
Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, S., Walker, David, Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, J. D.
(2024)
Activation of Al2O3 surface passivation of silicon : separating bulk and surface effects.
Applied Surface Science, 645
.
158786.
doi:10.1016/j.apsusc.2023.158786
ISSN 0169-4332.
2023
Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, Shona, Walker, D., Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, John D.
(2023)
Dataset to support "Activation of Al2O3 surface passivation of silicon: separating bulk and surface effects".
[Dataset]
2020
Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D.
(2020)
Data for Atomic level termination for passivation and functionalisation of silicon surfaces.
[Dataset]
Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D.
(2020)
Atomic level termination for passivation and functionalisation of silicon surfaces.
Nanoscale, 12
.
17332-17341 .
doi:10.1039/d0nr03860a
ISSN 2040-3364.
2019
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim
(2019)
Data for Effect of HCl cleaning on InSbβAl2O3 MOS capacitors.
[Dataset]
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim
(2019)
Effect of HCl cleaning on InSbβAl2O3 MOS capacitors.
Semiconductor Science and Technology, 34
(3).
035032.
doi:10.1088/1361-6641/ab0331
ISSN 0268-1242.
This list was generated on Tue Apr 23 17:31:11 2024 BST.