Number of items: 6.
Journal Article
Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, S., Walker, David, Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, J. D.
(2024)
Activation of Al2O3 surface passivation of silicon : separating bulk and surface effects.
Applied Surface Science, 645
.
158786.
doi:10.1016/j.apsusc.2023.158786
ISSN 0169-4332.
Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D.
(2020)
Atomic level termination for passivation and functionalisation of silicon surfaces.
Nanoscale, 12
.
17332-17341 .
doi:10.1039/d0nr03860a
ISSN 2040-3364.
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim
(2019)
Effect of HCl cleaning on InSbβAl2O3 MOS capacitors.
Semiconductor Science and Technology, 34
(3).
035032.
doi:10.1088/1361-6641/ab0331
ISSN 0268-1242.
Dataset
Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, Shona, Walker, D., Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, John D.
(2023)
Dataset to support "Activation of Al2O3 surface passivation of silicon: separating bulk and surface effects".
[Dataset]
Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D.
(2020)
Data for Atomic level termination for passivation and functionalisation of silicon surfaces.
[Dataset]
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim
(2019)
Data for Effect of HCl cleaning on InSbβAl2O3 MOS capacitors.
[Dataset]
This list was generated on Fri Mar 29 13:45:56 2024 GMT.