Number of items: 3.
Pezzoli, Fabio, Giorgioni, Anna, Patchett, David and Myronov, Maksym
(2016)
Temperature-dependent photoluminescence characteristics of GeSn pitaxial layers.
ACS Photonics, 3
(11).
pp. 2004-2009.
doi:10.1021/acsphotonics.6b00438
ISSN 2330-4022.
Patchett, David
(2016)
Germanium-tin-silicon epitaxial structures grown on silicon by reduced pressure chemical vapour deposition.
PhD thesis, University of Warwick.
Patchett, David, Myronov, Maksym, Rhead, Stephen, Halpin, John E. and Leadley, D. R. (David R.)
(2014)
Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate.
In: 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, 2-4 Jun 2014
pp. 71-72.
ISBN 9781479954278.
doi:10.1109/ISTDM.2014.6874654
This list was generated on Thu Mar 28 21:52:49 2024 GMT.