2022

Myronov, Maksym, Colston, Gerard B., Davies, Jack and Michael, Laura (2022) A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer. Semiconductor Science and Technology, 37 (6). 065003. doi:10.1088/1361-6641/ac5f69 ISSN 1361-6641. [ 🗎 Public]. [ (✓) hoa:511 ]

2021

Colston, Gerard B., Newell, Oliver, Rhead, Stephen D., Shah, V. A. and Myronov, Maksym (2021) Strain mapping of silicon carbon suspended membranes. Materials & Design, 211 . 110135. doi:10.1016/j.matdes.2021.110135 ISSN 0264-1275. [ 🗎 Public]. [ (✓) hoa:511 ]

2020

Zhou, Leiqing, Colston, Gerard B., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana, Shah, V. A. and Edwards, R. S. (Rachel S.) (2020) Ultrasonic inspection and self-healing of Ge and 3C-SiC semiconductor membranes. Journal of Microelectromechanical Systems, 29 (3). pp. 370-377. doi:10.1109/JMEMS.2020.2981909 ISSN 1057-7157. [ 🗎 Public]. [ (✓) hoa:511 ]

2018

Clausen, Caterina J, Fischer, Inga A, Weisshaupt, David, Baerwolf, Florian, Tillack, Bernd, Colston, Gerard B., Myronov, Maksym, Oehme, Michael and Schulze, Joerg (2018) Electrical characterization of n-doped SiGeSn diodes with high Sn content. Semiconductor Science and Technology, 33 (12). 124017. doi:10.1088/1361-6641/aae3ab ISSN 0268-1242.

Colston, Gerard B. and Myronov, Maksym (2018) Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus. Semiconductor Science and Technology, 33 (11). 114007. doi:10.1088/1361-6641/aade67 ISSN 1361-6641.

Jahandar, P., Weisshaupt, David, Colston, Gerard B., Allred, Phil, Schulze, Jorg and Myronov, Maksym (2018) The effect of Ge precursor on the heteroepitaxy of Ge1−x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, 33 (3). 034003. doi:10.1088/1361-6641/aa9e7e ISSN 0268-1242.

2017

Colston, Gerard B. and Myronov, Maksym (2017) Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures. Semiconductor Science and Technology, 32 (11). 114005. doi:10.1088/1361-6641/aa8b2a ISSN 0268-1242.

Colston, Gerard B. (2017) Wafer scale heteroepitaxy of silicon carbon and silicon carbide thin films and their material properties. PhD thesis, University of Warwick.

Zhou, L. Q., Colston, Gerard B. , Pearce, M., Prince, R. G., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana and Edwards, R. S. (Rachel Sian) (2017) Non-linear vibrational response of Ge and SiC membranes. Applied Physics Letters, 111 (1). 011904. doi:10.1063/1.4991537 ISSN 0003-6951. [ 🗎 Public]. [ (✓) hoa:511 ]

Edwards, R. S. (Rachel Sian), Zhou, L. Q., Pearce, M. J., Prince, R. G., Myronov, Maksym, Colston, Gerard B., Leadley, D. R. (David R.) and Trushkevych, Oksana (2017) Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS). In: 43rd Annual Review of Progress in Quantitative Nondestructive Evaluation, Atlanta, GA, USA, 17-22 Jul 2016. Published in: AIP Conference Proceedings, 1806 (1). 050013 . ISBN 9780735414747. ISSN 0094-243X. [ 🗎 Public].

2016

Colston, Gerard B., Rhead, Stephen, Shah, V. A., Newell, Oliver, Dolbnya, Igor P., Leadley, David R. and Myronov, Maksym (2016) Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction. Materials & Design, 103 . pp. 244-248. doi:10.1016/j.matdes.2016.04.078 ISSN 0264-1275. [ (✓) hoa:9009 ]

2015

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen and Leadley, D. R. (David R.) (2015) Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon. Semiconductor Science and Technology, 30 (11). 114003. doi:10.1088/0268-1242/30/11/114003 ISSN 0268-1242.

Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004 ISSN 0038-1101.

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Leadley, D. R. (David R.) (2015) Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823 . pp. 571-574. doi:10.4028/www.scientific.net/MSF.821-823.571 ISSN 1662-9752.

2014

Myronov, Maksym, Rhead, Stephen, Colston, Gerard B. and Leadley, D. R. (David R.) (2014) RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors. In: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 69-70. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874653