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Number of items: 32.
Journal Article
Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261. ISSN 2168-6734.
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.
Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M. and Mawby, Philip A. (2016) Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging. Materials Science Forum, 858 . pp. 405-409. doi:10.4028/www.scientific.net/msf.858.405 ISSN 1662-9752.
Hamilton, Dean P., Hindmarsh, Steven A., York, Stephen J., Walker, David, Russell, Stephen, Jennings, M. R., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300°C in air. Materials Science Forum, 858 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.858.557 ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771 ISSN 0741-3106.
Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen and Mawby, P. A. (2015) High-temperature (1200–1400°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11). pp. 4167-4174. doi:10.1007/s11664-015-3949-4 ISSN 0361-5235.
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi:10.4028/www.scientific.net/MSF.821-823.624
Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792 ISSN 0885-8993.
Pérez-Tomás, Amador, Catalàn, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., Nafría, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203. ISSN 0957-4484.
Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li and Mawby, P. A. (Philip A.) (2014) An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, Volume 2 (Number 3). pp. 517-528. doi:10.1109/JESTPE.2014.2307492 ISSN 2168-6777.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process. IEEE Transactions on Semiconductor Manufacturing, Volume 27 (Number 3). pp. 443-451. doi:10.1109/TSM.2014.2336701 ISSN 0894-6507.
Thomas, S. M., Sharma, Yogesh K., Crouch, M. A., Fisher, Craig A., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2014) Enhanced field effect mobility on 4H-SiC by oxidation at 1500◦C. IEEE Journal of the Electron Devices Society, 2 (5). pp. 114-117. ISSN 2168-6734.
Thomas, Stephen M., Jennings, M. R., Sharma, Yogesh K., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2014) Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors. Materials Science Forum, Volume 778-780 . pp. 599-602. doi:10.4028/www.scientific.net/MSF.778-780.599 ISSN 1662-9752.
Jennings, M. R., Fisher, Craig A., Walker, David, Sánchez, Ana M., Pérez-Tomás, Amador, Hamilton, Dean P., Gammon, P. M., Burrows, S. E. (Susan E.), Thomas, Stephen M., Sharma, Yogesh K., Li, Fan and Mawby, P. A. (Philip A.) (2014) On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts. Materials Science Forum, Volume 778-780 . pp. 693-696. doi:10.4028/www.scientific.net/MSF.778-780.693 ISSN 1662-9752.
Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Modic, Aaron, Xu, Yi, Granfukel, Eric, Jennings, M. R., Fisher, Craig A., Thomas, Stephen M., Mawby, P. A. (Philip A.), Dhar, Sarit, Feldman, Leonard C. and Williams, John (2014) Thin PSG process for 4H-SiC MOSFET. Materials Science Forum, Volume 778-780 . pp. 513-516. doi:10.4028/www.scientific.net/MSF.778-780.513 ISSN 1662-9752.
Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863 ISSN 1662-9752.
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. Materials Science Forum, 740-742 . pp. 1006-1009. doi:10.4028/www.scientific.net/MSF.740-742.1006 ISSN 1662-9752.
Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter, Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2013) Innovative 3C-SiC on SiC via direct wafer bonding. Materials Science Forum, Volume 740-742 . pp. 271-274. doi:10.4028/www.scientific.net/MSF.740-742.271 ISSN 1662-9752.
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, Craig A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M. and Nafría, M. (2012) Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, Vol.23 (No.39). Article no. 395204. doi:10.1088/0957-4484/23/39/395204 ISSN 0957-4484.
Jennings, M. R., Pérez-Tomás, Amador, Bashir, A., Sánchez, Ana M., Severino, A., Ward, Peter J., Thomas, S. M., Fisher, Craig A., Gammon, P. M., Zabala, M., Burrows, S. E., Donnellan, B., Hamilton, D. P., Walker, David and Mawby, P. A. (2012) Bow free 4'' diameter 3C-SiC Epilayers formed upon wafer-bonded Si/SiC substrates. ECS Solid State Letters, Volume 1 (Number 6). P85-P88. doi:10.1149/2.007206ssl ISSN 2162-8742.
Fisher, Craig A., Jennings, M. R., Bryant, Angus T., Pérez-Tomás, Amador, Gammon, P. M., Brosselard, Pierre, Godignon, Phillippe and Mawby, P. A. (Philip A.) (2012) Physical modelling of 4H-SiC PiN diodes. Materials Science Forum, Volume 717-720 . pp. 993-996. doi:10.4028/www.scientific.net/MSF.717-720.993 ISSN 1662-9752.
Conference Item
Karout, Mohammed Amer, Alatise, Olayiwola M., Ayala, Heaklig, Fisher, Craig A., Mawby, Philip. A. and Taha, Mohamed (2023) On the design procedure of the double pulse test rig for WBG devices. In: 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE), Luxor, Egypt, 19-21 Feb 2023. Published in: 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE) ISBN 9781665452335. doi:10.1109/cpere56564.2023.10119544
Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Cryogenic characterization of commercial SiC Power MOSFETs. In: Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014. Published in: Materials Science Forum, 821-823 pp. 777-780. doi:10.4028/www.scientific.net/MSF.821-823.777 ISSN 1662-9752.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Hamilton, Dean P., Jennings, M. R. (Michael R.), Sharma, Yogesh K., Fisher, Craig A., Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 4381-4387. doi:10.1109/ECCE.2014.6953720
Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter J., Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2013) Innovative 3C-SiC on SiC via direct wafer bonding. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, 740-742 pp. 271-274. ISBN 978-303785624-6. doi:10.4028/www.scientific.net/MSF.740-742.271 ISSN 1662-9752.
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. In: 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012. Published in: Materials Science Forum, Volume 740-742 pp. 1006-1009. doi:10.4028/www.scientific.net/MSF.740-742.1006 ISSN 1662-9752.
Thesis
Fisher, Craig A. (2014) Development of 4H-SiC PiN diodes for high voltage applications. PhD thesis, University of Warwick.
This list was generated on Sat Apr 20 12:30:59 2024 BST.