2016

Morrison, C., Casteleiro, Catarina, Leadley, D. R. (David R.) and Myronov, Maksym (2016) Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas. Applied Physics Letters, 109 (10). 102103. doi:10.1063/1.4962432

2014

Casteleiro, Catarina (2014) Electrical and physical characterization of Ge devices. PhD thesis, University of Warwick.

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.) (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. doi:10.7567/JJAP.53.04EH02

Morrison, C., Myronov, Maksym, Foronda, Jamie, Casteleiro, Catarina, Halpin, John E., Rhead, S. D. and Leadley, D. R. (David R.) (2014) Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. In: 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore, 02-02 June 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014 pp. 105-106. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874636

2013

Jasiński, Jakub, Łukasiak, Lidia, Jakubowski, Andrzej, Casteleiro, Catarina, Whall, Terry E., Parker, Evan H. C., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel. In: Electron Technology Conference 2013, Ryn, Poland, April 16, 2013. Published in: SPIE Proceedings, 8902 ISSN 0277-786X. doi:10.1117/12.2031269

Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 169-172. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519