The Library
Browse by Warwick Author
Up a level |
Jump to: Journal Article | Dataset
Number of items: 19.
Journal Article
Hou, Qichao, Fonseka, H. Aruni, Martelli, Faustino, Paci, Barbara, Gustafsson, Anders, Gott, James A., Yang, Hui, Huo, Suguo, Yu, Xuezhe, Chen, Lulu et al.
(2023)
Different doping behaviors of silicon in zinc blende and wurtzite GaAs nanowires : implications for crystal-phase device design.
ACS Applied Nano Materials, 6
(13).
pp. 11465-11471.
doi:10.1021/acsanm.3c01493
ISSN 2574-0970.
Chen, LuLu, Adeyemo, Stephanie O., Fonseka, H. Aruni, Liu, Huiyun, Kar, Srabani, Yang, Hui, Velichko, Anton, Mowbray, David J., Cheng, Zhiyuan, Sánchez, Ana M., Joyce, Hannah J. and Zhang, Yunyan (2022) Long-term stability and optoelectronic performance enhancement of InAsP nanowires with an ultrathin InP passivation layer. Nano Letters, 22 (8). pp. 3433-3439. doi:10.1021/acs.nanolett.2c00805 ISSN 1530-6984.
Zhang, Yunyan, Fonseka, H. Aruni, Yang, Hui, Yu, Xuezhe, Jurczak, Pamela, Huo, Suguo, Sánchez, Ana M. and Liu, Huiyun (2022) Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires. Nanoscale Horizons, 7 (3). 311-318 . doi:10.1039/d1nh00638j ISSN 2055-6764.
Perla, Pujitha, Fonseka, H. Aruni, Zellekens, Patrick, Deacon, Russell, Han, Yisong, Kölzer, Jonas, Mörstedt, Timm, Bennemann, Benjamin, Espiari, Abbas, Ishibashi, Koji, Grützmacher, Detlev, Sánchez, Ana M., Lepsa, Mihail Ion and Schäpers, Thomas (2021) Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation. Nanoscale Advances, 3 (5). pp. 1413-1421. doi:10.1039/D0NA00999G ISSN 2516-0230.
Fonseka, H. Aruni , Zhang, Yunyan, Gott, James A., Beanland, Richard, Liu, Huiyun and Sánchez, Ana M. (2021) Multiple radial phosphorus segregations in GaAsP core-shell nanowires. Nano Research, 14 . pp. 157-164. doi:10.1007/s12274-020-3060-x ISSN 1998-0124.
Zellekens, Patrick, Deacon, Russell, Perla, Pujitha, Fonseka, H. Aruni, Mörstedt, Timm, Hindmarsh, Steven A., Bennemann, Benjamin, Lentz, Florian, Lepsa, Mihail I., Sánchez, Ana M., Grützmacher, Detlev, Ishibashi, Koji and Schäpers, Thomas (2020) Hard-gap spectroscopy in a self-defined mesoscopic InAs / Al nanowire Josephson Junction. Physical Review Applied, 14 (5). 054019. doi:10.1103/PhysRevApplied.14.054019 ISSN 2331-7019.
Zhang, Yunyan, Sánchez, Ana M., Aagesen, Martin, Fonseka, H. Aruni, Huo, Suguo and Liu, Huiyun (2020) Droplet manipulation and horizontal growth of high-quality self-catalysed GaAsP nanowires. Nano Today, 34 . 100921. doi:10.1016/j.nantod.2020.100921 ISSN 1748-0132.
Tedeschi, Davide, Fonseka, H. Aruni, Blundo, Elena, Granados del Águila, Andrés, Guo, Yanan, Tan, Hark H., Christianen, Peter C. M., Jagadish, Chennupati, Polimeni, Antonio and De Luca, Marta (2020) Hole and electron effective masses in single InP nanowires with a Wurtzite-Zincblende homojunction. ACS Nano, 14 (9). pp. 11613-11622. doi:10.1021/acsnano.0c04174 ISSN 1936-086X.
Skalsky, Stefan, Zhang, Yunyan, Alanis, Juan Arturo, Fonseka, H. Aruni, Sánchez, Ana M., Liu, Huiyun and Parkinson, Patrick W. (2020) Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing. Light: Science and Applications, 9 . 43. doi:10.1038/s41377-020-0279-y ISSN 2047-7538.
Fonseka, H. Aruni, Caroff, Philippe, Guo, Yanan, Sánchez, Ana M., Tan, Hark Hoe and Jagadish, Chennupati (2019) Engineering the side facets of vertical [100] oriented InP nanowires for novel radial heterostructures. Nanoscale Research Letters, 14 (1). 399. doi:10.1186/s11671-019-3177-6 ISSN 1556-276X.
Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Defect dynamics in self-catalyzed III–V semiconductor nanowires. Nano Letters, 19 (7). pp. 4574-4580. doi:10.1021/acs.nanolett.9b01508 ISSN 1530-6984.
Fonseka, H. A., Velichko, Anton V., Zhang, Yunyan, Gott, James A., Davis, George D., Beanland, R., Liu, Huiyun, Mowbray, David J. and Sánchez, Ana M. (2019) Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires. Nano Letters, 19 (6). pp. 4158-4165. doi:10.1021/acs.nanolett.9b01673 ISSN 1530-6984.
Zhang, Yunyan, Davis, George, Fonseka, H. A., Velichko, Anton, Gustafsson, Anders, Godde, Tillmann, Saxena, Dhruv, Aagesen, Martin, Parkinson, Patrick W., Gott, Andrew L., Huo, Suguo, Sánchez, Ana M., Mowbray, David J. and Liu, Huiyun (2019) Highly strained III–V–V coaxial nanowire quantum wells with strong carrier confinement. ACS Nano, 13 (5). pp. 5931-5938. doi:10.1021/acsnano.9b01775 ISSN 1936-0851.
Zhang, Yunyan, Sánchez, Ana M., Aagesen, Martin, Huo, Suguo, Fonseka, H. Aruni, Gott, James A., Kim, Dongyoung, Yu, Xuezhe, Chen, Xingyou, Xu, Jia, Li, Tianyi, Zeng, Haotian, Boras, Giorgos and Liu, Huiyun (2018) Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions. Small, 15 (3). 1803684. doi:10.1002/smll.201803684 ISSN 1613-6810.
Zeng, Haotian, Yu, Xuezhe, Fonseka, H. Aruni, Gott, James A., Tang, Mingchu, Zhang, Yunyan, Boras, Giorgos, Xu, Jia, Sánchez, Ana M. and Liu, Huiyun (2018) Hybrid III–V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores. Nano Letters, 18 (10). pp. 6397-6403. doi:10.1021/acs.nanolett.8b02760 ISSN 1530-6984.
Sanchez, A. M., Gott, J. A., Fonseka, H. A., Zhang, Y., Liu, H. and Beanland, R. (2018) Stable Defects in Semiconductor Nanowires. Nano Letters, 18 (5). pp. 3081-3087. doi:10.1021/acs.nanolett.8b00620 ISSN 1530-6984.
Dataset
Fonseka, H. Aruni , Zhang, Yunyan, Gott, James A., Beanland, Richard, Liu, Huiyun and Sánchez, Ana M. (2020) Data for Multiple radial phosphorus segregations in GaAsP core-shell nanowires. [Dataset]
Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Data for Defect dynamics in self-catalyzed III-V semiconductor nanowires. [Dataset]
Fonseka, H. A., Gott, James A., Beanland, R. and Sanchez, Ana M. (2019) Data for Self-Formed quantum wires and dots in GaAsP−GaAsP core−shell nanowires. [Dataset]
This list was generated on Thu Mar 28 12:38:46 2024 GMT.