The Library
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Number of items: 13.
2017
Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T. T., Phillips, M., Russell, Stephen, Jennings, M. R. (Michael R.), Berini, B., Jomard, F. and Dumont, Y. (2017) P-type Ξ²-gallium oxide : a new perspective for power and optoelectronic devices. Materials Today Physics, 3 . pp. 118-126. doi:10.1016/j.mtphys.2017.10.002 ISSN 2542-5293.
Russell, Stephen, PΓ©rez-TomΓ‘s, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261. ISSN 2168-6734.
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and PΓ©rez-TomΓ‘s, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.
Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., PΓ©rez-TomΓ‘s, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151 ISSN 1662-9752.
2016
Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623 ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Jennings, M. R., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667 ISSN 1662-9752.
Hamilton, Dean P., Hindmarsh, Steven A., York, Stephen J., Walker, David, Russell, Stephen, Jennings, M. R., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300Β°C in air. Materials Science Forum, 858 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.858.557 ISSN 1662-9752.
2015
Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., PΓ©rez-TomΓ‘s, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen and Mawby, P. A. (2015) High-temperature (1200β1400Β°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11). pp. 4167-4174. doi:10.1007/s11664-015-3949-4 ISSN 0361-5235.
Cappelluti, F., Ghione, G., Russell, Stephen, Moran, D. A. J., Verona, C. and Limiti, E. (2015) Investigating the properties of interfacial layers in planar schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling. Applied Physics Letters, 106 . 103504. doi:10.1063/1.4915297 ISSN 0003-6951.
Russell, Stephen, Sharabi, Salah, Tallaire, Alexandre and Moran, David A. J. (2015) RF operation of hydrogen-terminated diamond field effect transistors : a comparative study. IEEE Transactions on Electron Devices, Volume 62 (Number 3). pp. 751-756. doi:10.1109/TED.2015.2392798 ISSN 0018-9383.
2013
Russell, Stephen, Cao, Liang, Qi, Dongchen, Tallaire, Alexandre, Crawford, Kevin G., Wee, Andrew T. S. and Moran, David A. J. (2013) Surface transfer doping of diamond by MoO3 : a combined spectroscopic and Hall measurement study. Applied Physics Letters, Volume 103 (Number 20). Article number 202112. doi:10.1063/1.4832455 ISSN 0003-6951.
2012
Russell, Stephen, Sharabi, Salah, Tallaire, Alex and Moran, David A. J. (2012) Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Letters, Volume 33 (Number 10). pp. 1471-1473. doi:10.1109/LED.2012.2210020 ISSN 0741-3106.
2011
Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, Stephen and May, P. W. (2011) Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions. IEEE Electron Device Letters, Volume 32 (Number 5). pp. 599-601. doi:10.1109/LED.2011.2114871 ISSN 0741-3106.
This list was generated on Fri Apr 19 00:20:10 2024 BST.