2017

Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T. T., Phillips, M., Russell, Stephen, Jennings, M. R. (Michael R.), Berini, B., Jomard, F. and Dumont, Y. (2017) P-type β-gallium oxide : a new perspective for power and optoelectronic devices. Materials Today Physics, 3 . pp. 118-126. doi:10.1016/j.mtphys.2017.10.002

Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261.

Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155

Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151

2016

Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623

Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667

Hamilton, Dean P., Hindmarsh, Steven A., York, Stephen J., Walker, David, Russell, Stephen, Jennings, M. R., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2016) Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300°C in air. Materials Science Forum, 858 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.858.557

2015

Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen and Mawby, P. A. (2015) High-temperature (1200–1400°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11). pp. 4167-4174. doi:10.1007/s11664-015-3949-4

Cappelluti, F., Ghione, G., Russell, Stephen, Moran, D. A. J., Verona, C. and Limiti, E. (2015) Investigating the properties of interfacial layers in planar schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling. Applied Physics Letters, 106 . 103504. doi:10.1063/1.4915297

Russell, Stephen, Sharabi, Salah, Tallaire, Alexandre and Moran, David A. J. (2015) RF operation of hydrogen-terminated diamond field effect transistors : a comparative study. IEEE Transactions on Electron Devices, Volume 62 (Number 3). pp. 751-756. doi:10.1109/TED.2015.2392798

2013

Russell, Stephen, Cao, Liang, Qi, Dongchen, Tallaire, Alexandre, Crawford, Kevin G., Wee, Andrew T. S. and Moran, David A. J. (2013) Surface transfer doping of diamond by MoO3 : a combined spectroscopic and Hall measurement study. Applied Physics Letters, Volume 103 (Number 20). Article number 202112. doi:10.1063/1.4832455

2012

Russell, Stephen, Sharabi, Salah, Tallaire, Alex and Moran, David A. J. (2012) Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Letters, Volume 33 (Number 10). pp. 1471-1473. doi:10.1109/LED.2012.2210020

2011

Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, Stephen and May, P. W. (2011) Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions. IEEE Electron Device Letters, Volume 32 (Number 5). pp. 599-601. doi:10.1109/LED.2011.2114871