2021

Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina and Gammon, P. M. (2021) Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, 68 (7). 3497 -3504. doi:10.1109/TED.2021.3083241

Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348

Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527

2020

Tiwari, Amit K., Antoniou, Marina, Trajkovic, Tatjana, Dai, Tian, Gammon, Peter M. and Udrea, Florin (2020) Transient performance of >10kV SiC IGBT with an optimized retrograde p-well. In: UNSPECIFIED. Published in: Materials Science Forum, 1004 pp. 917-922. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.1004.917

Holke, Alexander, Antoniou, Marina and Udrea, Florin (2020) Partial SOI as a HV platform technology for Power Integrated Circuits. In: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep - 18 Sep 2020 pp. 435-438. ISBN 978-1-7281-4837-3. ISSN 1063-6854. doi:10.1109/ISPSD46842.2020.9170051

Donato, Nazareno, Udrea, Florin, Mihaila, Andrei, Knoll, Lara, Romano, Gianpaolo, Kranz, Lukas and Antoniou, Marina (2020) Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout. In: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13-18 Sep 2020 pp. 198-201. ISBN 9781728148373. ISSN 1063-6854. doi:10.1109/ISPSD46842.2020.9170197

Arvanitopoulos, Anastasios E., Antoniou, Marina, Jennings, Mike R., Perkins, Samuel, Gyftakis, Konstantinos N., Mawby, Philip. A. and Lophitis, Neophytos (2020) A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8 (1). pp. 54-65. doi:10.1109/JESTPE.2019.2942714

Antoniou, Marina, Udrea, Florin, Lophitis, Neophytos , Corvasce, Chiara and De-Michielis, Luca (2020) The p-ring Trench Schottky IGBT : a solution towards latch-up immunity and an enhanced safe-operating area. In: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep 2020 - 18 Sep 2020 pp. 134-137. ISBN 9781728148373. ISSN 1063-6854. doi:10.1109/ISPSD46842.2020.9170084

2019

Tiwari, Amit K., Antoniou, Marina, Lophitis, Neo, Perkins, Samuel, Trajkovic, Tatjana and Udrea, Florin (2019) Performance Improvement of >10kV SiC IGBTs with retrograde p-well. In: 12th European Conference on Silicon Carbide and Related Materials , Birmingham, United Kingdom, 02-06 Sep 2018. Published in: Materials Science Forum, 963 pp. 639-642. ISBN 9783035713329. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.963.639

Findlay, E. M., Udrea, F. and Antoniou, M. (2019) Investigation of the dual implant reverse-conducting superjunction insulated-gate bipolar transistor. IEEE Electron Device Letters, 40 (6). pp. 862-865. doi:10.1109/LED.2019.2911994

Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C. and Badstuebner, U. (2019) Deep p-ring trench termination : an innovative and cost-effective way to reduce silicon area. IEEE Electron Device Letters, 40 (2). pp. 177-180. doi:10.1109/LED.2018.2890702

Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M. R. and Antoniou, M. (2019) Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. In: 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16-18 May 2018 pp. 169-173. ISBN 9781538643938. doi:10.1109/WiPDAAsia.2018.8734538

Tiwari, Amit K., Perkin, S., Lophitis, N., Antoniou, M., Trajkovic, T. and Udrea, F. (2019) On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019 pp. 351-357. ISBN 9781728118338. doi:10.1109/DEMPED.2019.8864804

Arvanitopoulos, Anastasios E., Antoniou, Marina, Perkins, Samuel, Jennings, Mike, Guadas, Manuel Belanche, Gyftakis, Konstantinos N. and Lophitis, Neophytos (2019) On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 55 (4). pp. 4080-4090. doi:10.1109/TIA.2019.2911872

Tiwari, Amit K., Udrea, Florin, Lophitis, Neophytos and Antoniou, Marina (2019) Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019 pp. 175-178. ISBN 9781728105802. ISSN 1063-6854. doi:10.1109/ISPSD.2019.8757586

Perkins, S., Antoniou, M., Tiwari, Amit K., Arvanitopoulos, A., Gyftakis, K. N., Trajkovic, T., Udrea, F. and Lophitis, N. (2019) Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. In: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019 pp. 358-363. ISBN 9781728118338. doi:10.1109/DEMPED.2019.8864919

Tiwari, Amit K., Antoniou, Marina, Lophitis, Neophytos, Perkin, Samuel, Trajkovic, Tatjana and Udrea, Florin (2019) Retrograde p-well for 10-kV class SiC IGBTs. IEEE Transactions on Electron Devices, 66 (7). pp. 3066-3072. doi:10.1109/TED.2019.2918008

Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N. and Lophitis, N. (2019) Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations. In: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019 pp. 364-370. ISBN 9781728118338. doi:10.1109/DEMPED.2019.8864910

2018

Perkins, Samuel, Antoniou, Marina, Tiwari, Amit K., Arvanitopoulos, Anastasios, Trajkovic, T., Udrea, Florin and Lophitis, Neophytos (2018) >10kV 4H-SiC n-IGBTs for elevated temperature environments. In: The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29 Aug 2018 - 31 Aug 2018

Arvanitopoulos, Anastasios, Perkins, Samuel, Antoniou, Marina, Li, Fan, Jennings, Mike, Gyftakis, Konstantinos N. and Lophitis, Neophytos (2018) On the development of the 3C-SiC power law and its applicability for the evaluation of termination structures. In: The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29-31 Aug 2018. Published in: International Symposium on Power Semiconductors (ISPS)

Lophitis, N., Antoniou, M., Vemulapati, U., Vobecky, J., Badstuebner, U., Wikstroem, T., Stiasny, T., Rahimo, M. and Udrea, F. (2018) Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability. IEEE Electron Device Letters, 39 (9). pp. 1342-1345. doi:10.1109/LED.2018.2847050

Lophitis, Neophytos, Arvanitopoulos, Anastasios, Perkins, Samuel and Antoniou, Marina (2018) TCAD device modelling and simulation of wide bandgap power semiconductors. In: Disruptive wide bandgap semiconductors, related technologies, and their applications. IntechOpen. ISBN 9781789236682

2017

Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S and Antoniou, M. (2017) Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation. Semiconductor Science and Technology, 32 (10). 104009. doi:10.1088/1361-6641/aa856b

Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy and Badstuebner, Uwe (2017) On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8). pp. 1063-1066. doi:10.1109/LED.2017.2718619

Arvanitopoulos, A., Lophitis, N., Perkins, S., Gyftakis, K. N., Belanche Guadas, M. and Antoniou, M. (2017) Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. In: IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Tinos, Greece, 29 Aug - 1 Sep 2017 pp. 565-571. ISBN 9781509004102. doi:10.1109/DEMPED.2017.8062411

Devane, Eoin, Kasis, Andreas, Antoniou, Marina and Lestas, Ioannis (2017) Primary frequency regulation with load-side participation—part II : beyond passivity approaches. IEEE Transactions on Power Systems, 32 (5). pp. 3519-3528. doi:10.1109/TPWRS.2016.2636284

2016

Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf and Vobecky, Jan (2016) 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, 12 - 16 Jun 2016 pp. 371-374. ISBN 9781467387712. ISSN 1946-0201. doi:10.1109/ISPSD.2016.7520855

2015

Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan and Rahimo, Munaf (2015) Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7). pp. 2263-2269. doi:10.1109/TED.2015.2428994

Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G. and Udrea, F. (2015) Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors. IEEE Electron Device Letters, 36 (8). pp. 823-825. doi:10.1109/LED.2015.2433894

Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Nistor, I., Bellini, M. and Rahimo, M. (2015) Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses. In: 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China, 10-14 May 2015 pp. 21-24. ISBN 9781479962594. ISSN 1063-6854. doi:10.1109/ISPSD.2015.7123379

Donato, N., Antoniou, M., Napoli, E., Amaratunga, G. and Udrea, F. (2015) On the models used for TCAD simulations of Diamond Schottky Barrier Diodes. In: International Semiconductor Conference (CAS), Sinaia, Romania, 12-14 Oct 2015 pp. 223-226. ISBN 9781479988624. ISSN 1545-827X. doi:10.1109/SMICND.2015.7355214

2014

Kho Ching Tee, Elizabeth, Antoniou, Marina, Udrea, Florin, Hoelke, Alexander, Ng, Liang Yew, Bin Wan Zainal Abidin, Wan Azlan, Pilkington, Steven John and Pal, Deb Kumar (2014) Analysis on the off-state design and characterization of LIGBTs in partial SOI technology. Solid-State Electronics, 96 . pp. 38-43. doi:10.1016/j.sse.2014.04.018

Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Nistor, Iulian, Arnold, Martin, Wikström, Tobias and Vobecky, Jan (2014) Parameters influencing the maximum controllable current in gate commutated thyristors. IET Circuits, Devices & Systems, 8 (3). pp. 221-226. doi:10.1049/iet-cds.2013.0217

Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikstrom, T., Vobecky, J. and Rahimo, M. (2014) The Stripe Fortified GCT : a new GCT design for maximizing the controllable current. In: 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii, USA, 15-19 Jun 2014 pp. 123-126. ISBN 9781479929177. ISSN 1063-6854. doi:10.1109/ISPSD.2014.6855991

2011

Antoniou, M., Udrea, F., Tee, E. Kho Ching, Hao, Yang, Pilkington, S., Yaw, Kee Kia, Pal, D. K. and Hoelke, A. (2011) Interface charge trapping and hot carrier reliability in high voltage SOI SJ LDMOSFET. In: UNSPECIFIED pp. 336-339. doi:10.1109/ISPSD.2011.5890859