2021

Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527

2019

Findlay, E. M., Udrea, F. and Antoniou, M. (2019) Investigation of the dual implant reverse-conducting superjunction insulated-gate bipolar transistor. IEEE Electron Device Letters, 40 (6). pp. 862-865. doi:10.1109/LED.2019.2911994

Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C. and Badstuebner, U. (2019) Deep p-ring trench termination : an innovative and cost-effective way to reduce silicon area. IEEE Electron Device Letters, 40 (2). pp. 177-180. doi:10.1109/LED.2018.2890702

2017

Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S and Antoniou, M. (2017) Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation. Semiconductor Science and Technology, 32 (10). 104009. doi:10.1088/1361-6641/aa856b

Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy and Badstuebner, Uwe (2017) On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8). pp. 1063-1066. doi:10.1109/LED.2017.2718619

2015

Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan and Rahimo, Munaf (2015) Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7). pp. 2263-2269. doi:10.1109/TED.2015.2428994

Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G. and Udrea, F. (2015) Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors. IEEE Electron Device Letters, 36 (8). pp. 823-825. doi:10.1109/LED.2015.2433894