
The Library
Browse by Warwick Author
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Number of items: 7.
2021
Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527
2019
Findlay, E. M., Udrea, F. and Antoniou, M. (2019) Investigation of the dual implant reverse-conducting superjunction insulated-gate bipolar transistor. IEEE Electron Device Letters, 40 (6). pp. 862-865. doi:10.1109/LED.2019.2911994
Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C. and Badstuebner, U. (2019) Deep p-ring trench termination : an innovative and cost-effective way to reduce silicon area. IEEE Electron Device Letters, 40 (2). pp. 177-180. doi:10.1109/LED.2018.2890702
2017
Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S and Antoniou, M. (2017) Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation. Semiconductor Science and Technology, 32 (10). 104009. doi:10.1088/1361-6641/aa856b
Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy and Badstuebner, Uwe (2017) On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8). pp. 1063-1066. doi:10.1109/LED.2017.2718619
2015
Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan and Rahimo, Munaf (2015) Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7). pp. 2263-2269. doi:10.1109/TED.2015.2428994
Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G. and Udrea, F. (2015) Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors. IEEE Electron Device Letters, 36 (8). pp. 823-825. doi:10.1109/LED.2015.2433894
This list was generated on Tue Jan 26 00:26:17 2021 GMT.