Number of items: 5.
Journal Article
Zhang, L., Dai, Tianxiang, Gammon, Peter M., Lophitis, Neophytos , Udrea, Florin, Tiwari, Amit, Gonzalez, Jose Ortiz, Renz, A. B., Shah, Vishal, Mawby, Philip A. and Antoniou, Marina
(2022)
Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design.
Materials Science Forum, 1062
.
pp. 504-508.
doi:10.4028/p-13z22g
ISSN 1662-9752.
Baker, G. W. C., Li, Fan, Dai, Tianxiang, Renz, A. B., Zhang, L., Qi, Yunyi, Shah, Vishal, Mawby, Philip A., Antoniou, Marina and Gammon, Peter M.
(2022)
A study of 4H-SiC semi-superjunction rectifiers for practical realisation.
Materials Science Forum, 1062
.
pp. 514-518.
doi:10.4028/p-cxd7z3
ISSN 1662-9752.
Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A.
(2021)
Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications.
Semiconductor Science and Technology, 36
(5).
055006.
doi:10.1088/1361-6641/abefa1
ISSN 1361-6641.
Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M.
(2021)
A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices.
IEEE Transactions on Electron Devices, 68
(3).
pp. 1162-1167.
doi:10.1109/TED.2020.3047348
ISSN 0018-9383.
Thesis
Zhang, Luyang
(2023)
High-performance SiC-based power semiconductor devices.
PhD thesis, University of Warwick.
This list was generated on Thu Mar 28 15:05:29 2024 GMT.