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Number of items: 18.
Journal Article
Lophitis, Neophytos , Gammon, Peter M., Renz, A. B., Dai, Tianxiang, Tiwari, Amit, Trajkovic, Tatjana, Mawby, Philip A., Udrea, Florin and Antoniou, Marina (2022) Compact trench floating field rings termination for 10kV+ rated SiC n-IGBTs. Materials Science Forum, 1062 . pp. 598-602. doi:10.4028/p-64ey6u ISSN 1662-9752.
Zhang, L., Dai, Tianxiang, Gammon, Peter M., Lophitis, Neophytos , Udrea, Florin, Tiwari, Amit, Gonzalez, Jose Ortiz, Renz, A. B., Shah, Vishal, Mawby, Philip A. and Antoniou, Marina (2022) Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design. Materials Science Forum, 1062 . pp. 504-508. doi:10.4028/p-13z22g ISSN 1662-9752.
Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A. and Shah, Vishal (2022) The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062 . pp. 325-329. doi:10.4028/p-b76y6c ISSN 1662-9752.
Baker, G. W. C., Li, Fan, Dai, Tianxiang, Renz, A. B., Zhang, L., Qi, Yunyi, Shah, Vishal, Mawby, Philip A., Antoniou, Marina and Gammon, Peter M. (2022) A study of 4H-SiC semi-superjunction rectifiers for practical realisation. Materials Science Forum, 1062 . pp. 514-518. doi:10.4028/p-cxd7z3 ISSN 1662-9752.
Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A. and Shah, Vishal (2022) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062 . pp. 523-527. doi:10.4028/p-92w3k6 ISSN 1662-9752.
Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A. (Philip A.) and Antoniou, M. (2022) Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization. IEEE Transactions on Electron Devices, 69 (4). pp. 1924-1930. doi:10.1109/TED.2022.3152460 ISSN 0018-9383.
Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.
Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina and Gammon, P. M. (2021) Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, 68 (7). 3497 -3504. doi:10.1109/TED.2021.3083241 ISSN 0018-9383.
Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.
Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348 ISSN 0018-9383.
Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527 ISSN 1369-8001.
Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2). 025704. doi:10.1063/1.5133739 ISSN 0021-8979.
Dai, Tianxiang, Chan, Chun Wa, Deng, Xc, Jiang, Huaping, Gammon, P. M., Jennings, M. R. and Mawby, P. A. (Philip A.) (2018) 4H-SiC trench MOSFET with integrated fast recovery MPS diode. ELECTRONICS LETTERS, 54 (3). pp. 167-169. doi:10.1049/el.2017.3198 ISSN 0013-5194.
Deng, Xiaochuan, Guo, Yuanxu, Dai, Tianxiang, Li, Chengzhan, Chen, Ximing, Chen, Wanjun, Zhang, Yourun and Zhang, Bo (2017) A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs. Materials Science in Semiconductor Processing, 68 . pp. 108-113. doi:10.1016/j.mssp.2017.06.019 ISSN 1369-8001.
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and PΓ©rez-TomΓ‘s, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.
Conference Item
Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J. and Gammon, P. M. (2023) The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs. In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE) doi:10.1109/ecce53617.2023.10362455
Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa (2018) Safe-operating-area of snubberless series connected silicon and SiC power devices. In: Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 1875-1881. ISBN 9781479973132. doi:10.1109/ECCE.2018.8557402 ISSN 2329-3748.
Thesis
Dai, Tianxiang (2018) Design, simulation and fabrication of 4H-SiC Power MOSFETs. PhD thesis, University of Warwick.
This list was generated on Fri Mar 29 08:58:51 2024 GMT.