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Number of items: 16.
Journal Article
Renz, A. B., Vavasour, Oliver J., PΓ©rez-TomΓ‘s, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W. C., Mawby, Philip A. and Gammon, Peter M. (2022) Engineering the Schottky interface of 3.3 kV SiC JBS diodes using a P2O5 surface passivation treatment. Materials Science Forum, 1062 . pp. 190-194. doi:10.4028/p-97jy4p ISSN 1662-9752.
Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A. and Shah, Vishal (2022) The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062 . pp. 325-329. doi:10.4028/p-b76y6c ISSN 1662-9752.
Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A. and Shah, Vishal (2022) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062 . pp. 523-527. doi:10.4028/p-92w3k6 ISSN 1662-9752.
Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A. (Philip A.) and Antoniou, M. (2022) Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization. IEEE Transactions on Electron Devices, 69 (4). pp. 1924-1930. doi:10.1109/TED.2022.3152460 ISSN 0018-9383.
Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.
Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.
Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.
Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348 ISSN 0018-9383.
Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527 ISSN 1369-8001.
Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2). 025704. doi:10.1063/1.5133739 ISSN 0021-8979.
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Effect of HCl cleaning on InSbβAl2O3 MOS capacitors. Semiconductor Science and Technology, 34 (3). 035032. doi:10.1088/1361-6641/ab0331 ISSN 0268-1242.
Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., PΓ©rez-TomΓ‘s, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151 ISSN 1662-9752.
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., PΓ©rez-TomΓ‘s, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Conference Item
Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J. and Gammon, P. M. (2023) The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs. In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE) doi:10.1109/ecce53617.2023.10362455
Dataset
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Data for Effect of HCl cleaning on InSbβAl2O3 MOS capacitors. [Dataset]
This list was generated on Thu Apr 25 13:09:20 2024 BST.