Number of items: 4.
2024
Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos , Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea and Antoniou, Marina
(2024)
Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices.
In: The 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 02 - 06 Jun 2024
(In Press)
2023
Wu, Yifei, Li, Chengxi, Ran, Li, Cao, Qinze, Gammon, Peter M., Feng, Hao, Li, Yun, Ng, Chong and Wu, Binbing
(2023)
Evaluation of bipolar degradation in SiC MOSFETs for converter design.
In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE)
doi:10.1109/ecce53617.2023.10362409
ISSN 2329-3748.
Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J. and Gammon, P. M.
(2023)
The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs.
In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE)
doi:10.1109/ecce53617.2023.10362455
2022
Renz, A. B., Vavasour, Oliver J., PΓ©rez-TomΓ‘s, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W. C., Mawby, Philip A. and Gammon, Peter M.
(2022)
Engineering the Schottky interface of 3.3 kV SiC JBS diodes using a P2O5 surface passivation treatment.
Materials Science Forum, 1062
.
pp. 190-194.
doi:10.4028/p-97jy4p
ISSN 1662-9752.
This list was generated on Thu Apr 18 18:08:15 2024 BST.