2018

Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V. and Kalna, K. (2018) Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. Solid-State Electronics, 142 . pp. 31-35. doi:10.1016/j.sse.2018.01.006

2016

Martinez, Antonio, Price, Anna, Valin, Raul, Aldegunde, Manuel and Barker, John (2016) Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets : a NEGF perspective. Journal of Computational Electronics, 15 (4). pp. 1130-1147. doi:10.1007/s10825-016-0851-0

Aldegunde, Manuel, Kermode, James R. and Zabaras , Nicholas (2016) Development of an exchange–correlation functional with uncertainty quantification capabilities for density functional theory. Journal of Computational Physics, 311 . pp. 173-195. doi:10.1016/j.jcp.2016.01.034

Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J. and Kalna, Karol (2016) Anisotropic quantum corrections for 3-D finite-element Monte Carlo Simulations of nanoscale multigate transistors. IEEE Transactions on Electron Devices, 63 (3). pp. 933-939. doi:10.1109/TED.2016.2519822

Seoane, N., Indalecio, G., Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J. and Kalna, Karol (2016) Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs. IEEE Transactions on Electron Devices, 63 (3). pp. 1209-1215. doi:10.1109/TED.2016.2516921