Number of items: 5.
Suvanam, Sethu Saveda, Usman, Muhammed, Martin, David, Yazdi, Milad. G., Linnarsson, Margareta, Tempez, Agnès, Götelid, Mats and Hallén, Anders
(2018)
Improved interface and electrical properties of atomic layer deposited Al2O3 / 4H-SiC.
Applied Surface Science, 433
.
pp. 108-115.
doi:10.1016/j.apsusc.2017.10.006
ISSN 0169-4332.
Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.)
(2017)
Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS.
Materials Science Forum, 897
.
pp. 151-154.
doi:10.4028/www.scientific.net/MSF.897.151
ISSN 1662-9752.
Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M. and Mawby, Philip A.
(2016)
Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging.
Materials Science Forum, 858
.
pp. 405-409.
doi:10.4028/www.scientific.net/msf.858.405
ISSN 1662-9752.
Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.)
(2016)
High temperature nitridation of 4H-SiC MOSFETs.
Materials Science Forum, 858
.
pp. 623-626.
doi:10.4028/www.scientific.net/MSF.858.623
ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.)
(2016)
Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si.
Materials Science Forum, 858
.
pp. 667-670.
doi:10.4028/www.scientific.net/MSF.858.667
ISSN 1662-9752.
This list was generated on Thu Mar 28 23:47:11 2024 GMT.