Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. ISSN 0003-6951

Pinski, S. D., Schirmacher, W., Whall, Terry E. and Roemer, Rudolf A.. (2012) Localization–delocalization transition for disordered cubic harmonic lattices. Journal of Physics: Condensed Matter, Vol.24 (No.40). Article no. 405401. ISSN 0953-8984

Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Vol.5 (No.7). 071301. ISSN 1882-0778

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. ISSN 0003-6951

Thomas, S. M., Prest, M. J. (Martin J.), Whall, Terry E., Leadley, D. R. (David R.), Toniutti, P., Conzatti, F., Esseni, D., Donetti, L., Gámiz, F., Lander, R. J. P., Vellianitis, G., Hellström, P.-E. and Östling, M.. (2011) On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors. Journal of Applied Physics, Vol.110 (No.12). Article: 124503. ISSN 0021-8979

Donetti, L., Gámiz, F., Thomas, S., Whall, Terry E., Leadley, D. R. (David R.), Hellström, P.-E., Malm, G. and Östling, Mikael. (2011) Hole effective mass in silicon inversion layers with different substrate orientations and channel directions. Journal of Applied Physics, Vol.110 (No.6). ISSN 0021-8979

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C.. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. ISSN 0018-9383

Muhonen, Juha, Prest, M. J., Prunnila, Mika, Gunnarsson, D., Shah, V. A., Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. ISSN 0003-6951

. (2011) Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations. IEEE Transactions on Electron Devices, Vol.58 (No.6). pp. 1583-1593. ISSN 0018-9383

Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, C. H. W.. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. ISSN 0003-6951

Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, M., Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen). (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. ISSN 1742-6596

Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, M., Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc. (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. ISSN 1742-6596

Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R.. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. ISSN 0038-1101

Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, R. J. P., Vellianitis, G. and Watling, J. R. (2009) Improved effective mobility extraction in MOSFETs. In: 10th International Conference on Ultimate Integration on Silicon, Aachen, Germany, Mar 2009. Published in: Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256.

Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, R. J. P., Vellianitis, G. and Watling, J. R. (2009) Accurate effective mobility extraction in SOI MOS transistors. In: 10th International Conference on Ultimate Integration on Silicon, Aachen, Germany, March 18-20, 2009. Published in: ULIS 2009: 10th International Conference on Ultimate Integration of Silicon pp. 31-34.

. (2009) Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs. pp. 1-4.

Raskin, J.-P. (Jean-Pierre), 1971-, Pearman, D. J., Pailloncy, G., Larson, J. M., Snyder, J., Leadley, D. R. (David R.) and Whall, Terry E.. (2008) High-frequency performance of Schottky source/drain silicon pMOS devices. IEEE Electron Device Letters, Vol.29 (No.4). pp. 396-398. ISSN 0741-3106

Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, E. H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210.

Dobbie, A. (Andrew), De Jaeger, B., Meuris, M., Whall, Terry E., Parker, E. H. C. and Leadley, D. R. (David R.) (2008) Channd backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10.

Beer, C. (Chris), Whall, Terry E., Parker, E. H. C., Leadley, D. R. (David R.), De Jaeger, B., Nicholas, G., Zimmerman, P. and Meuris, Marc (2008) The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 19-22.

Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, Brice, Nicholas, Gareth, Zimmerman, Paul, Meuris, Marc, Szostak, Slawomir, Gluszko, Grzegorz and Lukasiak, Lidia. (2007) Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, Vol.91 (No.26). p. 263512. ISSN 0003-6951

Pearman, Dominic J., Pailloncy, Guillaume, Raskin, Jean-Pierre, Larson, John M., Snyder, John P., Parker, Evan H. C. and Whall, Terry E.. (2007) Static and high-frequency behavior and performance of Schottky-barrier, p-MOSFET devices. IEEE Transactions on Electron Devices, Vol.54 (No.10). pp. 2796-2802. ISSN 0018-9383

von Haartman, M., Malm, B. G., Hellström, P.-E., Östling, Mikael, Grasby, T. J., Whall, Terry E., Parker, E. H. C., Lyutovich, K., Oehme, M. and Kasper, E.. (2007) Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs. Solid-State Electronics, Vol.51 (No.5). pp. 771-777. ISSN 0038-1101

Dobbie, A. (Andrew), Nicholas, Gareth, Meuris, Marc, Parker, Evan H. C. and Whall, Terry E. (2007) Low temperature performance of deep submicron germanium pMOSFETs. In: International Workshop on Electron Devices and Semiconductor Technology, Tsinghua Univ, Beijing, PEOPLES R CHINA, JUN 03-04, 2007. Published in: 2007 International Workshop on Electron Devices and Semiconductor Technology pp. 62-65.

Myranov, Maksym, Mironov, Oleg A., Durov, Sergiy, Whall, Terry E., Parker, Evan H. C., Hackbarth, T., Höck, G., Herzog, H.-J. and König, U.. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor. Applied Physics Letters, Vol.84 (No.4). pp. 610-612. ISSN 0003-6951

Capewell, A. D., Grasby, T. J., Whall, Terry E. and Parker, Evan H. C.. (2002) Terrace grading of SiGe for high-quality virtual substrates. Applied Physics Letters, Vol.81 (No.25). pp. 4775-4777. ISSN 0003-6951

Myranov, Maksym, Phillips, P. J. (Peter J.), Whall, Terry E. and Parker, Evan H. C.. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.19). pp. 3557-3559. ISSN 0003-6951

Myranov, Maksym, Irisawa, T., Mironov, Oleg A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C.. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. ISSN 0003-6951

Palmer, M. J. (Martin J.), Braithwaite, Glyn, Grasby, T. J., Phillips, P. J. (Peter J.), Prest, M. J. (Martin J.), Parker, Evan H. C., Whall, Terry E., Parry, C. P., Waite, A. M., Evans, A. G. R., Roy, S. (Scott), Watling, J. R., Kaya, S. and Asenov, A. (Asen). (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, Vol.78 (No.10). pp. 1424-1426. ISSN 0003-6951

Sadeghzadeh, Mohammad Ali, Horrell, A. I., Mironov, Oleg A., Parker, Evan H. C., Whall, Terry E. and Kearney, M. J.. (2000) Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure. Applied Physics Letters, Vol.76 (No.18). pp. 2568-2570. ISSN 0003-6951

Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, Oleg A., Parker, Evan H. C. and Whall, Terry E.. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. ISSN 0003-6951

Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G.. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. ISSN 0003-6951

McGregor, Barry M., Lander, Robert James Pascoe, Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E.. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures. Applied Physics Letters, Vol.74 (No.9). pp. 1245-1247. ISSN 0003-6951

Sadeghzadeh, Mohammad Ali, Parry, C. P., Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E.. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, Vol.74 (No.4). pp. 579-581. ISSN 0003-6951

Hammond, Richard, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Graf, Thomas, 1966-, Känel, H. von and Sheilds, A. J.. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1 – xGex buffer layers. Applied Physics Letters, Vol.71 (No.17). pp. 2517-2519. ISSN 0003-6951

Emeleus, C. J., Sadeghzadeh, Mohammad Ali, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Pepper, M. and Evans, A. G. R.. (1997) Back gating of a two-dimensional hole gas in a SiGe quantum well. Applied Physics Letters, Vol.70 (No.14). pp. 1870-1872. ISSN 0003-6951

Paul, D. J., Griffin, N., Arnone, D. D., Pepper, M., Emeleus, C. J., Phillips, P. J. (Peter J.) and Whall, Terry E.. (1996) Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator. Applied Physics Letters, Vol.69 (No.18). pp. 2704-2706. ISSN 0003-6951

Khizhny, V. I., Mironov, Oleg A., Parker, Evan H. C., Phillips, P. J. (Peter J.), Whall, Terry E. and Kearney, Michael J.. (1996) Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures. Applied Physics Letters, Vol.69 (No.7). pp. 960-962. ISSN 0003-6951

Whall, Terry E., Plews, Andrew D., Mattey, Nevil L., Phillips, P. J. (Peter J.) and Ekenberg, U.. (1995) Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells. Applied Physics Letters, Vol.66 (No.20). pp. 2724-2726. ISSN 0003-6951

Whall, Terry E., Plews, Andrew D., Mattey, Nevil L. and Parker, Evan H. C.. (1994) Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05x0.3. Applied Physics Letters, Vol.65 (No.26). pp. 3362-3364. ISSN 0003-6951

Basaran, Engin, Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C.. (1994) Very high two-dimensional hole gas mobilities in strained silicon germanium. Applied Physics Letters, Vol.64 (No.25). pp. 3470-3472. ISSN 0003-6951

Whall, Terry E., Mattey, Nevil L., Plews, Andrew D., Phillips, P. J. (Peter J.), Mironov, Oleg A., Nicholas, R. J. and Kearney, M. J.. (1994) Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. Applied Physics Letters, Vol.64 (No.3). pp. 357-359. ISSN 0003-6951

Paul, D. J., Cleaver, J. R. A., Ahmed, H. and Whall, Terry E.. (1993) Coulomb blockade in silicon based structures at temperatures up to 50 K. Applied Physics Letters, Vol.63 (No.5). pp. 631-632. ISSN 0003-6951

Tang, Y. S., Wilkinson, C. D. W., Sotomayor Torres, C. M., Smith, D. W., Whall, Terry E. and Parker, Evan H. C.. (1993) Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires. Applied Physics Letters, Vol.63 (No.4). pp. 497-499. ISSN 0003-6951

Smith, D. W., Emeleus, C. J., Kubiak, Richard A. A., Parker, Evan H. C. and Whall, Terry E.. (1992) Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases. Applied Physics Letters, Vol.61 (No.12). pp. 1453-1455. ISSN 0003-6951

Gardelis, S., Rimmer, J. S., Dawson, P. (Philip), Hamilton, B. (Bruce), Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C.. (1991) Evidence for quantum confinement in the photoluminescence of porous Si and SiGe. Applied Physics Letters, Vol.59 (No.17). pp. 2118-2120. ISSN 0003-6951

Parry, C. P., Newstead, S. M. (Simon M.), Barlow, R. D., Augustus, P. D., Kubiak, Richard A. A., Dowsett, M. G., Whall, Terry E. and Parker, Evan H. C.. (1991) Elemental boron doping behavior in silicon molecular beam epitaxy. Applied Physics Letters, Vol.58 (No.5). pp. 481-483. ISSN 0003-6951

Mattey, Nevil L., Dowsett, M. G., Parker, Evan H. C., Whall, Terry E., Taylor, S. (Stephen) and Zhang, J. F.. (1990) p-type delta-doped layers in silicon: structural and electronic properties. Applied Physics Letters, Vol.57 (No.16). pp. 1648-1650. ISSN 0003-6951

Zhang, J. P., Tang, Y. S., Robinson, A. K., Bussmann, U., Hemment, P. L. F. (Peter L. F.), Sealy, B., Newstead, S. M. (Simon M.), Powell, A. R., Whall, Terry E. and Parker, Evan H. C.. (1990) Behavior of high dose O+-implanted Si/Ge/Si structures. Applied Physics Letters, Vol.57 (No.9). pp. 890-892. ISSN 0003-6951