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Journal Article
Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, Evan H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2016) Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184 (1-2). pp. 231-237. doi:10.1007/s10909-016-1569-x ISSN 0022-2291.
Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductorβsuperconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398 ISSN 2045-2322.
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electronβphonon and holeβphonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002 ISSN 0038-1101.
Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J. T., Gunnarsson, David, Prunnila, Mika, Shah, V. A., Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, Volume 103 . pp. 15-18. doi:10.1016/j.sse.2014.09.003 ISSN 0038-1101.
Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. doi:10.1016/j.sse.2014.04.015 ISSN 0038-1101.
Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, E. H. C., Prest, M. J., Prunnila, Mika, Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2014) A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters, Volume 105 (Number 4). Article number 043509. doi:10.1063/1.4892069 ISSN 0003-6951.
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, ChΓ‘vez-Γngel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615 ISSN 0734-2101.
Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, Volume 13 (Number 5). Article number 055002. doi:10.1088/1468-6996/13/5/055002 ISSN 1468-6996.
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476 ISSN 0003-6951.
Pinski, S. D., Schirmacher, W., Whall, Terry E. and RΓΆmer, Rudolf A. (2012) Localizationβdelocalization transition for disordered cubic harmonic lattices. Journal of Physics: Condensed Matter, Vol.24 (No.40). Article no. 405401. doi:10.1088/0953-8984/24/40/405401 ISSN 0953-8984.
Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Volume 5 (Number 7). 071301. doi:10.1143/APEX.5.071301 ISSN 1882-0778.
Riddet, C., Watling, J. R., Chan, K., Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.) and Asenov, A. (2012) Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature. IEEE Transactions on Electron Devices, Volume 59 (Number 7). pp. 1878-1884. doi:10.1109/TED.2012.2194498 ISSN 0018-9383.
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Thomas, S. M., Prest, M. J. (Martin J.), Whall, Terry E., Leadley, D. R. (David R.), Toniutti, P., Conzatti, F., Esseni, D., Donetti, L., GΓ‘miz, F., Lander, R. J. P., Vellianitis, G., HellstrΓΆm, P.-E. and Γstling, M. (2011) On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors. Journal of Applied Physics, Vol.110 (No.12). Article: 124503. doi:10.1063/1.3669490 ISSN 0021-8979.
Donetti, L., GΓ‘miz, F., Thomas, S., Whall, Terry E., Leadley, D. R. (David R.), HellstrΓΆm, P.-E., Malm, G. and Γstling, Mikael (2011) Hole effective mass in silicon inversion layers with different substrate orientations and channel directions. Journal of Applied Physics, Vol.110 (No.6). doi:10.1063/1.3639281 ISSN 0021-8979.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. doi:10.1109/TED.2011.2160679 ISSN 0018-9383.
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Conzatti, Francesco, Serra, Nicola, Esseni, D. (David), De Michielis, M., Paussa, Alan, Palestri, P. (Pierpaolo), Selmi, L. (Luca), Thomas, S. M., Whall, Terry E., Leadley, D. R. (David R.) et al.
(2011)
Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations.
IEEE Transactions on Electron Devices, Vol.58
(No.6).
pp. 1583-1593.
doi:10.1109/TED.2011.2119320
ISSN 0018-9383.
Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, Crispin H. W. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. doi:10.1063/1.3505337 ISSN 0003-6951.
Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061 ISSN 1742-6596.
Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044 ISSN 1742-6596.
Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. doi:10.1016/j.sse.2009.09.014 ISSN 0038-1101.
Serra, N., Conzatti, F., Esseni, D. (David), De Michielis, M., Palestri, P. (Pierpaolo), Selmi, L. (Luca), Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.) et al.
(2009)
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs.
pp. 1-4.
doi:10.1109/IEDM.2009.5424419
Raskin, J.-P., Pearman, D. J., Pailloncy, G., Larson, J. M., Snyder, J., Leadley, D. R. (David R.) and Whall, Terry E. (2008) High-frequency performance of Schottky source/drain silicon pMOS devices. IEEE Electron Device Letters, Vol.29 (No.4). pp. 396-398. doi:10.1109/LED.2008.918250 ISSN 0741-3106.
Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, Brice, Nicholas, Gareth, Zimmerman, Paul, Meuris, Marc, Szostak, Slawomir, Gluszko, Grzegorz and Lukasiak, Lidia (2007) Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, Vol.91 (No.26). p. 263512. doi:10.1063/1.2828134 ISSN 0003-6951.
Pearman, Dominic J., Pailloncy, Guillaume, Raskin, Jean-Pierre, Larson, John M., Snyder, John P., Parker, Evan H. C. and Whall, Terry E. (2007) Static and high-frequency behavior and performance of Schottky-barrier, p-MOSFET devices. IEEE Transactions on Electron Devices, Vol.54 (No.10). pp. 2796-2802. doi:10.1109/TED.2007.904985 ISSN 0018-9383.
von Haartman, M., Malm, B. G., HellstrΓΆm, P.-E., Γstling, Mikael, Grasby, T. J., Whall, Terry E., Parker, Evan H. C., Lyutovich, K., Oehme, M. and Kasper, E. (2007) Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs. Solid-State Electronics, Vol.51 (No.5). pp. 771-777. doi:10.1016/j.sse.2007.03.011 ISSN 0038-1101.
Myranov, Maksym, Mironov, O. A., Durov, Sergiy, Whall, Terry E., Parker, Evan H. C., Hackbarth, T., HΓΆck, G., Herzog, H.-J. and KΓΆnig, U. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metalβoxideβsemiconductor field-effect transistor. Applied Physics Letters, Vol.84 (No.4). pp. 610-612. doi:10.1063/1.1643532 ISSN 0003-6951.
Capewell, Adam Daniel, Grasby, T. J., Whall, Terry E. and Parker, Evan H. C. (2002) Terrace grading of SiGe for high-quality virtual substrates. Applied Physics Letters, Vol.81 (No.25). pp. 4775-4777. doi:10.1063/1.1529308 ISSN 0003-6951.
Myranov, Maksym, Phillips, P. J. (Peter J.), Whall, Terry E. and Parker, Evan H. C. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.19). pp. 3557-3559. doi:10.1063/1.1478779 ISSN 0003-6951.
Myranov, Maksym, Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. doi:10.1063/1.1473690 ISSN 0003-6951.
Palmer, M. J. (Martin J.), Braithwaite, Glyn, Grasby, T. J., Phillips, P. J. (Peter J.), Prest, M. J. (Martin J.), Parker, Evan H. C., Whall, Terry E., Parry, C. P., Waite, A. M., Evans, A. G. R., Roy, S. (Scott), Watling, J. R., Kaya, S. and Asenov, A. (Asen) (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, Vol.78 (No.10). pp. 1424-1426. doi:10.1063/1.1354662 ISSN 0003-6951.
Sadeghzadeh, Mohammad Ali, Horrell, A. I., Mironov, O. A., Parker, Evan H. C., Whall, Terry E. and Kearney, M. J. (2000) Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure. Applied Physics Letters, Vol.76 (No.18). pp. 2568-2570. doi:10.1063/1.126410 ISSN 0003-6951.
Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, O. A., Parker, Evan H. C. and Whall, Terry E. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. doi:10.1063/1.125963 ISSN 0003-6951.
Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metalβoxideβsemiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. doi:10.1063/1.123689 ISSN 0003-6951.
McGregor, Barry M., Lander, Robert James Pascoe, Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures. Applied Physics Letters, Vol.74 (No.9). pp. 1245-1247. doi:10.1063/1.123513 ISSN 0003-6951.
Sadeghzadeh, Mohammad Ali, Parry, C. P., Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, Vol.74 (No.4). pp. 579-581. doi:10.1063/1.123151 ISSN 0003-6951.
Hammond, Richard, Phillips, P. J., Parker, Evan H. C., Whall, Terry E., Graf, Thomas, KΓ€nel, H. von and Sheilds, A. J. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1 β xGex buffer layers. Applied Physics Letters, Vol.71 (No.17). pp. 2517-2519. doi:10.1063/1.120105 ISSN 0003-6951.
Emeleus, C. J., Sadeghzadeh, Mohammad Ali, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Pepper, M. and Evans, A. G. R. (1997) Back gating of a two-dimensional hole gas in a SiGe quantum well. Applied Physics Letters, Vol.70 (No.14). pp. 1870-1872. doi:10.1063/1.118729 ISSN 0003-6951.
Paul, Douglas J. (Professor of Semiconductor Devices)β , Griffin, N., Arnone, D. D., Pepper, M., Emeleus, C. J., Phillips, P. J. (Peter J.) and Whall, Terry E. (1996) Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator. Applied Physics Letters, Vol.69 (No.18). pp. 2704-2706. doi:10.1063/1.117684 ISSN 0003-6951.
Khizhny, V. I., Mironov, O. A., Parker, Evan H. C., Phillips, P. J. (Peter J.), Whall, Terry E. and Kearney, Michael J. (1996) Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures. Applied Physics Letters, Vol.69 (No.7). pp. 960-962. doi:10.1063/1.117095 ISSN 0003-6951.
Whall, Terry E., Plews, Andrew D., Mattey, Nevil L., Phillips, P. J. (Peter J.) and Ekenberg, U. (1995) Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells. Applied Physics Letters, Vol.66 (No.20). pp. 2724-2726. doi:10.1063/1.113501 ISSN 0003-6951.
Whall, Terry E., Plews, Andrew D., Mattey, Nevil L. and Parker, Evan H. C. (1994) Hole effective mass in remote doped Si/Si1βxGex quantum wells with 0.05x0.3. Applied Physics Letters, Vol.65 (No.26). pp. 3362-3364. doi:10.1063/1.112392 ISSN 0003-6951.
Basaran, Engin, Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C. (1994) Very high two-dimensional hole gas mobilities in strained silicon germanium. Applied Physics Letters, Vol.64 (No.25). pp. 3470-3472. doi:10.1063/1.111244 ISSN 0003-6951.
Whall, Terry E., Mattey, Nevil L., Plews, Andrew D., Phillips, P. J. (Peter J.), Mironov, O. A., Nicholas, R. J. and Kearney, M. J. (1994) Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. Applied Physics Letters, Vol.64 (No.3). pp. 357-359. doi:10.1063/1.111147 ISSN 0003-6951.
Paul, Douglas J. (Professor of Semiconductor Devices)β , Cleaver, J. R. A., Ahmed, H. and Whall, Terry E. (1993) Coulomb blockade in silicon based structures at temperatures up to 50 K. Applied Physics Letters, Vol.63 (No.5). pp. 631-632. doi:10.1063/1.109972 ISSN 0003-6951.
Tang, Y. S., Wilkinson, C. D. W., Sotomayor Torres, C. M., Smith, D. W., Whall, Terry E. and Parker, Evan H. C. (1993) Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires. Applied Physics Letters, Vol.63 (No.4). pp. 497-499. doi:10.1063/1.109984 ISSN 0003-6951.
Smith, D. W., Emeleus, C. J., Kubiak, Richard A. A., Parker, Evan H. C. and Whall, Terry E. (1992) Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases. Applied Physics Letters, Vol.61 (No.12). pp. 1453-1455. doi:10.1063/1.107515 ISSN 0003-6951.
Gardelis, S., Rimmer, J. S., Dawson, P. (Philip), Hamilton, B. (Bruce), Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C. (1991) Evidence for quantum confinement in the photoluminescence of porous Si and SiGe. Applied Physics Letters, Vol.59 (No.17). pp. 2118-2120. doi:10.1063/1.106098 ISSN 0003-6951.
Parry, C. P., Newstead, S. M. (Simon M.), Barlow, R. D., Augustus, P. D., Kubiak, Richard A. A., Dowsett, M. G., Whall, Terry E. and Parker, Evan H. C. (1991) Elemental boron doping behavior in silicon molecular beam epitaxy. Applied Physics Letters, Vol.58 (No.5). pp. 481-483. doi:10.1063/1.104614 ISSN 0003-6951.
Mattey, Nevil L., Dowsett, M. G., Parker, Evan H. C., Whall, Terry E., Taylor, S. (Stephen) and Zhang, J. F. (1990) p-type delta-doped layers in silicon: structural and electronic properties. Applied Physics Letters, Vol.57 (No.16). pp. 1648-1650. doi:10.1063/1.104076 ISSN 0003-6951.
Zhang, J. P., Tang, Y. S., Robinson, A. K., Bussmann, U., Hemment, P. L. F. (Peter L. F.), Sealy, B., Newstead, S. M. (Simon M.), Powell, A. R., Whall, Terry E. and Parker, Evan H. C. (1990) Behavior of high dose O+-implanted Si/Ge/Si structures. Applied Physics Letters, Vol.57 (No.9). pp. 890-892. doi:10.1063/1.103395 ISSN 0003-6951.
Book Item
Leadley, D. R. (David R.), Prest, M. J. (Martin J.), Ahopelto, Jouni, Brien, Tom, Gunnarsson, David, Mauskopf, Phil, Muhonen, Juha, Myronov, Maksym, Nguyen, Hung, Parker, Evan H. C., Prunnila, Mika, Richardson-Bullock, J. S., Shah, V. A., Whall, Terry E. and Zhao, Q. T. (2014) Silicon-based cooling elements. In: Balestra, Francis, (ed.) Beyond CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 303-330. ISBN 9781848216549
Leadley, D. R. (David R.), Shah, V. A., Ahopelto, Jouni, Alzina, Francesc, ChΓ‘vez-Γngel, Emigdio, Muhonen, Juha, Myronov, Maksym, Nassiopoulou, Androula G., Nguyen, Hung, Parker, E. H. C., Pekola, Jukka, Prest, M. J., Prunnila, Mika, Reparaz, Juan Sebastian, Shchepetov, Andrey, Sotomayor-Torres, Clivia, Valalaki, Katerina and Whall, Terry E. (2014) Thermal isolation through nanostructuring. In: Balestra, Francis, (ed.) Beyond-CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 331-363. ISBN 9781848216549
Conference Item
JasiΕski, Jakub, Εukasiak, Lidia, Jakubowski, Andrzej, Casteleiro, Catarina, Whall, Terry E., Parker, Evan H. C., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel. In: Electron Technology Conference 2013, Ryn, Poland, April 16, 2013. Published in: SPIE Proceedings, 8902 doi:10.1117/12.2031269 ISSN 0277-786X.
Whall, Terry E., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Leadley, D. R. (David R.), Prunnila, Mika, Gunnarsson, David, Brien, T., Mozonov, D. and Mauskopf, P. (2013) Cooltronics : a new low-temperature tunneling-technology based on Silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 1-4. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515
Shah, V. A., Myronov, Maksym, Bawden, L., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Gammon, P. M., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2013) Novel fabrication technique for Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 181-184. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
Prest, M. J. (Martin J.), Zhao, Q. T, Muhonen, J. T., Shah, V. A., Richardson-Bullock, J. S., Prunnila, Mika, Gunnarsson, David, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Using platinum silicide as a superconductor for silicon electron coolers. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 201-204. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451
Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, R. J. P., Vellianitis, G. and Watling, J. R. (2009) Accurate effective mobility extraction in SOI MOS transistors. In: 10th International Conference on Ultimate Integration on Silicon, Aachen, Germany, March 18-20, 2009. Published in: ULIS 2009: 10th International Conference on Ultimate Integration of Silicon pp. 31-34. ISBN 978-1-4244-3705-4. doi:10.1109/ULIS.2009.4897532
Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527175
Dobbie, A. (Andrew), De Jaeger, B., Meuris, Marc, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Channel backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527129
Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, B., Nicholas, G., Zimmerman, P. and Meuris, Marc (2008) The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 19-22. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527132
Dobbie, A. (Andrew), Nicholas, Gareth, Meuris, Marc, Parker, Evan H. C. and Whall, Terry E. (2007) Low temperature performance of deep submicron germanium pMOSFETs. In: International Workshop on Electron Devices and Semiconductor Technology, Tsinghua Univ, Beijing, China, 03-04 Jun 2007. Published in: Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, 2007. EDST 2007. pp. 62-65. ISBN 1424410983.
This list was generated on Thu Apr 25 00:47:06 2024 BST.