Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, C. A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN.. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . ISSN 0021-8979

Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. ISSN 0003-6951

Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Vol.5 (No.7). 071301. ISSN 1882-0778

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, Richard, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. ISSN 0003-2700

Shah, V. A., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. ISSN 0040-6090

Gallacher, K., Velha, P., Paul, D. J., MacLaren, I., Myronov, M. and Leadley, D. R. (David R.). (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, Vol.100 (No.2). 022113. ISSN 0003-6951

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.) (2012) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis . n/a-n/a. ISSN 0142-2421 (In Press)

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, M. and Leadley, D. R. (David R.). (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. ISSN 0013-4651

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. ISSN 0003-6951

Thomas, S. M., Prest, M. J. (Martin J.), Whall, Terry E., Leadley, D. R. (David R.), Toniutti, P., Conzatti, F., Esseni, D., Donetti, L., Gámiz, F., Lander, R. J. P., Vellianitis, G., Hellström, P.-E. and Östling, M.. (2011) On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors. Journal of Applied Physics, Vol.110 (No.12). Article: 124503. ISSN 0021-8979

Lever, L., Hu, Youfang, Myronov, M., Liu, Xianping, Owens, N. (Nathan), Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R. (David R.), Reed, G. T. and Kelsall, Robert W.. (2011) Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, Vol.36 (No.21). pp. 4158-4160. ISSN 0146-9592

Donetti, L., Gámiz, F., Thomas, S., Whall, Terry E., Leadley, D. R. (David R.), Hellström, P.-E., Malm, G. and Östling, Mikael. (2011) Hole effective mass in silicon inversion layers with different substrate orientations and channel directions. Journal of Applied Physics, Vol.110 (No.6). ISSN 0021-8979

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C.. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. ISSN 0018-9383

Shah, Vishal Ajit, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. ISSN 0038-1101

Zhylik, A., Benediktovich, A., Ulyanenkov, A., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, T.. (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of Applied Physics, Vol.109 (No.12). p. 123714. ISSN 0021-8979

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.). (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. ISSN 0038-1101

Muhonen, Juha, Prest, M. J., Prunnila, Mika, Gunnarsson, D., Shah, V. A., Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. ISSN 0003-6951

. (2011) Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations. IEEE Transactions on Electron Devices, Vol.58 (No.6). pp. 1583-1593. ISSN 0018-9383

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D: Applied Physics, Vol.44 (No.5). 055102. ISSN 0022-3727

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.). (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. ISSN 1071-1023

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V. and Leadley, D. R. (David R.). (2011) Acoustic studies of ac conductivity mechanisms in n-GaAs/Al_{x}Ga_{1-x}As in the integer and fractional quantum Hall effect regime. Physical Review B (Condensed Matter and Materials Physics), Vol.83 (No.23). article no. 235318 . ISSN 1098-0121

Myronov, M., Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.). (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. ISSN 0022-0248

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, M., Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C.. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. ISSN 0741-3106

Shah, V. A., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. ISSN 0040-6090

. (2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. ISSN 0021-4922

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. ISSN 0022-3727

Zhylik, A., Rinaldi, F., Myronov, M., Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P.. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. ISSN 1862-6300

Liu, Xue-Chao and Leadley, D. R. (David R.). (2010) Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures. Journal of Physics D : Applied Physics, Vol.43 (No.50). article no. 505303 . ISSN 0022-3727

Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A. and Barnes, C. H. W.. (2010) Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16). pp. 162104-1. ISSN 0003-6951

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.). (2010) Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor. Journal of experimental and Theoretical Physics, Vol.111 (No.3). pp. 495-502. ISSN 1063-7761

Dobbie, A. (Andrew), Myronov, M., Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.). (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . ISSN 0268-1242

Mironov, Oleg A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I. (Vladimir Ivanovich), Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, 1959-, Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. ISSN 0022-2291

Mironov, O. A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I. (Vladimir Ivanovich), Isella, G., Kummer, M., von Kaenel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, 1959-, Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. ISSN 0022-2291

Leadley, D. R. (David R.), Andrievskii, V. V., Berkutov, I. B., Komnik, Y. F., Hackbarth, T. and Mironov, O. A. (2010) Quantum interference effects in p-Si1-x Ge (x) quantum wells. In: 9th International Conference on Research in High Magnetic Fields (RHMF 2009), Dresden, Germany, July 22-25, 2009. Published in: Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233.

Shah, V. A., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. ISSN 0021-8979

Leadley, D. R. (David R.), Andrievskii, Vladimir V., 1944-, Berkutov, Igor B., Komnik, Yuri F., Hackbarth, T. and Mironov, Oleg A.. (2010) Quantum interference effects in p-Si1−xGex quantum wells. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. ISSN 0022-2291

Myronov, M., Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.). (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. ISSN 1099-0062

Myronov, M., Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C.. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. ISSN 1862-6351

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Shah, V. A. and Parsons, J. (2010) Introduction to novel materials for nanoscale CMOS. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 3-22. ISBN 9781848211803

Dobbie, A. (Andrew), Myronov, M., Liu, Xue-Chao, Nguyen, Van Huy, Parker, Evan H. C. and Leadley, D. R. (David R.) (2010) Investigation of the thermal stability of strained Ge layers grown at low temperature by reduced-pressure chemical vapour deposition on Si0.2Ge0.8 relaxed buffers. In: 2010 MRS Spring Meeting & Exhibit, San Francisco, CA, 5-10 Apr 2010. Published in: MRS Proceedings, Vol.1252 pp. 104-106.

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, M., Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803

Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, M., Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen). (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. ISSN 1742-6596

Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, M., Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc. (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. ISSN 1742-6596

Thomas, Stephen M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, Robert James Pascoe, Vellianitis, G. and Watling, J. R.. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256. ISSN 0038-1101

Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, R. J. P., Vellianitis, G. and Watling, J. R. (2009) Improved effective mobility extraction in MOSFETs. In: 10th International Conference on Ultimate Integration on Silicon, Aachen, Germany, Mar 2009. Published in: Solid-State Electronics, Vol.53 (No.12). pp. 1252-1256.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.). (2009) Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields. Annalen der Physik, Vol.18 (No.12 (Sp. Iss. SI)). pp. 939-943. ISSN 0003-3804

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.). (2009) Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). article no. 205310. ISSN 1098-0121

Myronov, Maksym, Leadley, D. R. (David R.) and Shiraki, Y.. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual. Applied Physics Letters, Vol.94 (No.9). 092108. ISSN 0003-6951

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Mironov, O. A., Mironov, M. and Leadley, D. R. (David R.). (2009) Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas in quantum wells based on germanium and silicon. Determination of the effective mass and g factor. Low Temperature Physics, Vol.35 (No.2). pp. 141-145. ISSN 1063-777X

Thomas, S. M., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Lander, R. J. P., Vellianitis, G. and Watling, J. R. (2009) Accurate effective mobility extraction in SOI MOS transistors. In: 10th International Conference on Ultimate Integration on Silicon, Aachen, Germany, March 18-20, 2009. Published in: ULIS 2009: 10th International Conference on Ultimate Integration of Silicon pp. 31-34.

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Shah, Vishal Ajit, Dobbie, A. (Andrew), Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John, 1980- and Leadley, D. R. (David R.). (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. ISSN 0003-6951

Parsons, J., Beer, C. S., Leadley, D. R. (David R.), Capewell, A. D. and Grasby, T. J.. (2008) Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates. Thin Solid Films, Vol.517 (No.1). pp. 17-19. ISSN 0040-6090

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Parsons, Jonathan, 1981-, Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John, 1980-. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. ISSN 0003-6951

Berkutov, I. B., Andrievskii, V. V., 1953-, Komnik, Yu F., Leadley, D. R. (David R.), Myronov, M., von Kanel, H. and Mironov, O. A.. (2008) A new method of investigating the quantum channel surface. Journal of Physics-Condensed Matter, Vol.20 (No.22). Article no. 224024 . ISSN 0953-8984

Driussi, F., Esseni, D. (David), Selmi, L. (Luca), Hellström, P.-E., Malm, G., Hallstedt, J., Östling, Mikael, Grasby, T. J., Leadley, D. R. (David R.) and Mescot, X.. (2008) On the electron mobility enhancement in biaxially strained Si MOSFETs. Solid-State Electronics, Vol.52 (No.4). pp. 498-505. ISSN 0038-1101

Raskin, J.-P. (Jean-Pierre), 1971-, Pearman, D. J., Pailloncy, G., Larson, J. M., Snyder, J., Leadley, D. R. (David R.) and Whall, Terry E.. (2008) High-frequency performance of Schottky source/drain silicon pMOS devices. IEEE Electron Device Letters, Vol.29 (No.4). pp. 396-398. ISSN 0741-3106

Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu., Suslov, A. V., Galperin, Y. M., Vinokur, Valerii M., Myronov, M., Mironov, O. A. and Leadley, D. R. (David R.). (2008) Magnetotransport in low-density p-Si/SiGe heterostructures : from metal through hopping insulator to Wigner glass. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.8). article no. 085327. ISSN 1098-0121

Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, E. H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210.

Dobbie, A. (Andrew), De Jaeger, B., Meuris, M., Whall, Terry E., Parker, E. H. C. and Leadley, D. R. (David R.) (2008) Channd backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10.

Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214.

Beer, C. (Chris), Whall, Terry E., Parker, E. H. C., Leadley, D. R. (David R.), De Jaeger, B., Nicholas, G., Zimmerman, P. and Meuris, Marc (2008) The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 19-22.

Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, Brice, Nicholas, Gareth, Zimmerman, Paul, Meuris, Marc, Szostak, Slawomir, Gluszko, Grzegorz and Lukasiak, Lidia. (2007) Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, Vol.91 (No.26). p. 263512. ISSN 0003-6951

Parsons, J., Parker, E. H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, A. D. (2007) Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ]. Applied Physics Letters, Vol.91 (No.18). ISSN 0003-6951

Parsons, Jonathan, 1981-, Parker, Evan H. C., Leadley, D. R. (David R.), Grasby, T. J. and Capewell, A. D.. (2007) Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates. Applied Physics Letters, Vol.91 (No.6). 063127. ISSN 0003-6951

Berkutov, I. B., Komnik, Yu. F., Andrievskii, V. V., Mironov, O. A., Myronov, M. and Leadley, D. R. (David R.). (2006) Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure. LOW TEMPERATURE PHYSICS, 32 (7). pp. 683-688. ISSN 1063-777X