2019

Murphy, John D., Pointon, A. I., Grant, Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Minority carrier lifetime in indium doped silicon for photovoltaics. Progress in Photovoltaics : Research and Applications, 27 (10). pp. 844-855. doi:10.1002/pip.3172

Bioud, Youcef A, Boucherif, Abderraouf, Myronov, Maksym, Soltani, Ali, Patriarche, Gilles, Braidy, Nadi, Jellite, Mourad, Drouin, Dominique and Arès, Richard (2019) R : Uprooting defects to enable high-performance III-V optoelectronic devices on silicon. Nature Communications, 10 (1). 4322. doi:10.1038/s41467-019-12353-9

Murphy, John D., Pointon, A. I., Grant , N. E., Shah, V. A., Myronov, Maksym, Voronkov, V. V. and Falster, R. J. (2019) Data for Minority carrier lifetime in indium doped silicon for photovoltaics. [Dataset]

De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Grilli, E., Amand, T., Marie, X., Myronov, Maksym and Pezzoli, F. (2019) Spin-coherent dynamics and carrier lifetime in strained Ge1−xSnx semiconductors on silicon. Physical Review B (Condensed Matter and Materials Physics), 99 (3). 035202 . doi:10.1103/PhysRevB.99.035202

2018

Clausen, Caterina J, Fischer, Inga A, Weisshaupt, David, Baerwolf, Florian, Tillack, Bernd, Colston, Gerard B., Myronov, Maksym, Oehme, Michael and Schulze, Joerg (2018) Electrical characterization of n-doped SiGeSn diodes with high Sn content. Semiconductor Science and Technology, 33 (12). 124017. doi:10.1088/1361-6641/aae3ab

Colston, Gerard B. and Myronov, Maksym (2018) Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus. Semiconductor Science and Technology, 33 (11). 114007. doi:10.1088/1361-6641/aade67

Mukanova, Aliya, Nurpeissova, Arailym, Zharbossyn, Assem, Kim, Sung-Soo, Myronov, Maksym and Bakenov, Zhumabay (2018) N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries. Materials Today : Proceedings, 5 (11). pp. 22759-22763. doi:10.1016/j.matpr.2018.07.087

Bechler, Stefan, Kern, Michal, Funk, Hannes Simon, Colston, Gerard, Fischer, Inga Anita, Weißhaupt, David, Myronov, Maksym, van Slageren, Joris and Schulze, Jörg (2018) Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111). Semiconductor Science and Technology, 33 (9). 095008. doi:10.1088/1361-6641/aad4cf

Mizokuchi, R., Maurand, R., Vigneau, F., Myronov, M. and De Franceschi, S. (2018) Ballistic one-dimensional holes with strong g-factor anisotropy in germanium. Nano Letters, 18 (8). pp. 4861-4865. doi:10.1021/acs.nanolett.8b01457

Bakenov, Z., Myronov, M., Kim, S.-S., Nurpeissova, A., Zharbossyn, A. and Mukanova, A. (2018) Electrochemical Study of Graphene Coated Nickel Foam as an Anode for Lithium-Ion Battery. Eurasian Chemico-Technological Journal, 20 (2). p. 91. doi:10.18321/ectj694

Jahandar, P., Weisshaupt, David, Colston, Gerard B., Allred, Phil, Schulze, Jorg and Myronov, Maksym (2018) The effect of Ge precursor on the heteroepitaxy of Ge1−x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, 33 (3). 034003. doi:10.1088/1361-6641/aa9e7e

Gul, Yilmaz, Holmes, Stuart N., Myronov, Maksym, Kumar, Sanjeev and Pepper, Michael (2018) Self-organised fractional quantisation in a hole quantum wire. Journal of Physics: Condensed Matter, 30 (9). 09LT01. doi:10.1088/1361-648X/aaabab

Sivadasan, Vineet, Leadley, D. R. (David R.) and Myronov, Maksym (2018) Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates. Semiconductor Science and Technology, 33 (2). 024002. doi:10.1088/1361-6641/aaa329

Mukanova, Aliya, Nurpeissova, Arailym, Kim, Sung-Soo, Myronov, Maksym and Bakenov, Zhumabay (2018) N-type doped silicon thin film on a porous Cu current collector as the negative electrode for Li-ion batteries. ChemistryOpen, 7 (1). pp. 92-96. doi:10.1002/open.201700162

Keller, Janine, Scalari, Giacomo, Appugliese, Felice, Rajabali, Shima, Maissen, Curdin, Lehner, Christian A., Wegscheider, Werner, Nataf, Pierre, Faist, Jerome, Haase, Johannes, Failla, Michele, Myronov, Maksym, Lcadley, David R. and Lloyd-Hughes, James (2018) Critical mode softening in ultra-strong coupling of landau level transitions to THz metamaterials beyond the Hopfield model. In: 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) , Nagoya, Japan , 9-14 Sept 2018 pp. 1-3. doi:10.1109/IRMMW-THz.2018.8510438

2017

Mukanova, Aliya, Nurpeissova, Arailym, Urazbayev, Arshat, Kim, Sung-Soo, Myronov, Maksym and Bakenov, Zhumabay (2017) Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries. Electrochimica Acta, 258 . pp. 800-806. doi:10.1016/j.electacta.2017.11.129

Gul, Y., Holmes, S. N., Newton, P. J., Ellis, D. J. P., Morrison, C., Pepper, M., Barnes, C. H. W. and Myronov, Maksym (2017) Quantum ballistic transport in strained epitaxial germanium. Applied Physics Letters, 111 (23). 233512. doi:10.1063/1.5008969

Morrison, Christopher and Myronov, Maksym (2017) Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium. Applied Physics Letters, 111 (19). 192103. doi:10.1063/1.5010933

Millar, R. W., Dumas, D. C. S., Gallacher, K. F., Jahandar, P., MacGregor, C., Myronov, Maksym and Paul, D. J. (2017) Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks. Optics Express, 25 (21). 25374. doi:10.1364/OE.25.025374

Colston, Gerard B. and Myronov, Maksym (2017) Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures. Semiconductor Science and Technology, 32 (11). 114005. doi:10.1088/1361-6641/aa8b2a

Norris, D. J., Myronov, Maksym, Leadley, D. R. and Walther, T. (2017) Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers. Journal of Microscopy, 268 (3). pp. 288-297. doi:10.1111/jmi.12654

Kaganer, Vladimir, Ulyanenkova, Tatjana, Benediktovitch, Andrei, Myronov, Maksym and Ulyanenkov, Alex (2017) Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction. Journal of Applied Physics, 122 (10). 105302. doi:10.1063/1.4990135

Knox, C. S., Morrison, C., Herling, F., Ritchie, D. A., Newell, Oliver, Myronov, Maksym, Linfield, E. H. and Marrows, C. H. (2017) Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure. Semiconductor Science and Technology, 32 (10). 104002. doi:10.1088/1361-6641/aa827e

Mizokuchi, R., Torresani, P., Maurand, R., Zeng, Z., Niquet, Y.-M., Myronov, Maksym and De Franceschi, S. (2017) Hole weak anti-localization in a strained-Ge surface quantum well. Applied Physics Letters, 111 (6). 063102. doi:10.1063/1.4997411

Zhou, L. Q., Colston, Gerard B. , Pearce, M., Prince, R. G., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana and Edwards, R. S. (Rachel Sian) (2017) Non-linear vibrational response of Ge and SiC membranes. Applied Physics Letters, 111 (1). 011904. doi:10.1063/1.4991537

Herling, F., Morrison, Christopher, Knox, C. S., Zhang, S., Newell, Oliver, Myronov, Maksym, Linfield, E. H. and Marrows, C. H. (2017) Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization. Physical Review B (Condensed Matter and Materials Physics), 95 (15). 155307 . doi:10.1103/PhysRevB.95.155307

Edwards, R. S. (Rachel Sian), Zhou, L. Q., Pearce, M. J., Prince, R. G., Myronov, Maksym, Colston, Gerard B., Leadley, D. R. (David R.) and Trushkevych, Oksana (2017) Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS). In: 43rd Annual Review of Progress in Quantitative Nondestructive Evaluation, Atlanta, GA, USA, 17-22 Jul 2016. Published in: AIP Conference Proceedings, 1806 (1). 050013 . ISBN 9780735414747. ISSN 0094-243X.

Newton, P. J., Mansell, R., Holmes, S. N., Myronov, Maksym and Barnes, C. H. W. (2017) Weak localization and weak antilocalization in doped germanium epilayers. Applied Physics Letters, 110 (6). 062101. doi:10.1063/1.4975600

Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557

2016

Failla, Michele, Kelleher, J., Scalari, G., Maissen, C., Faist, J., Reichl, C., Wegscheider, W., Newell, Oliver, Leadley, D. R. (David R.), Myronov, Maksym and Lloyd-Hughes, James (2016) Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells. New Journal of Physics, 18 (11). 113036. doi:10.1088/1367-2630/18/11/113036

Morrison, Christopher and Myronov, Maksym (2016) Strained germanium for applications in spintronics. physica status solidi (a), 213 (11). pp. 2809-2819. doi:10.1002/pssa.201600713

Pezzoli, Fabio, Giorgioni, Anna, Patchett, David and Myronov, Maksym (2016) Temperature-dependent photoluminescence characteristics of GeSn pitaxial layers. ACS Photonics, 3 (11). pp. 2004-2009. doi:10.1021/acsphotonics.6b00438

Morrison, C., Casteleiro, Catarina, Leadley, D. R. (David R.) and Myronov, Maksym (2016) Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas. Applied Physics Letters, 109 (10). 102103. doi:10.1063/1.4962432

Holmes, S. N., Newton, P. J., Llandro, J., Mansell, R., Barnes, C. H. W., Morrison, Christopher and Myronov, Maksym (2016) Spin-splitting in p-type Ge devices. Journal of Applied Physics, 120 (8). 085702. doi:10.1063/1.4961416

Colston, Gerard B., Rhead, Stephen, Shah, V. A., Newell, Oliver, Dolbnya, Igor P., Leadley, David R. and Myronov, Maksym (2016) Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction. Materials & Design, 103 . pp. 244-248. doi:10.1016/j.matdes.2016.04.078

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, Evan H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2016) Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184 (1-2). pp. 231-237. doi:10.1007/s10909-016-1569-x

Morrison, Christopher, Foronda, Jamie, Wiśniewski, P., Rhead, Stephen, Leadley, D. R. (David R.) and Myronov, Maksym (2016) Evidence of strong spin–orbit interaction in strained epitaxial germanium. Thin Solid Films, 602 . pp. 84-89. doi:10.1016/j.tsf.2015.09.063

2015

Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym and Prunnila, Mika (2015) Interfacial engineering of semiconductor–superconductor junctions for high performance micro-coolers. Scientific Reports, 5 . 17398 . doi:10.1038/srep17398

Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen and Leadley, D. R. (David R.) (2015) Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon. Semiconductor Science and Technology, 30 (11). 114003. doi:10.1088/0268-1242/30/11/114003

Halpin, John E., Rhead, Stephen, Sánchez, Ana M., Myronov, Maksym and Leadley, D. R. (David R.) (2015) Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature. Semiconductor Science and Technology, 30 (11). 114009. doi:10.1088/0268-1242/30/11/114009

Shi, Q., Zudov, M. A., Morrison, Christopher and Myronov, Maksym (2015) Transport anisotropy in Ge quantum wells in the absence of quantum oscillations. Physical Review B (Condensed Matter and Materials Physics), 92 (16). pp. 1-5. 161405(R). doi:10.1103/PhysRevB.92.161405

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, Stephen, Foronda, Jamie and Leadley, D. R. (David R.) (2015) Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate. Solid-State Electronics, 110 . pp. 35-39. doi:10.1016/j.sse.2015.01.012

Failla, Michele, Myronov, Maksym, Morrison, Christopher, Leadley, D. R. (David R.) and Lloyd-Hughes, James (2015) Narrow heavy-hole cyclotron resonances split by the cubic Rashba spin-orbit interaction in strained germanium quantum wells. Physical Review B (Condensed Matter and Materials Physics), 92 (4). 045303. doi:10.1103/PhysRevB.92.045303

Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Cryogenic characterization of commercial SiC Power MOSFETs. In: Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014. Published in: Materials Science Forum, 821-823 pp. 777-780. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.821-823.777

Shi, Q., Zudov, M. A., Morrison, Christopher and Myronov, Maksym (2015) Spinless composite fermions in an ultrahigh-quality strained Ge quantum well. Physical Review B (Condensed Matter and Materials Physics), 91 (24). pp. 1-4. 241303(R). doi:10.1103/PhysRevB.91.241303

Benediktovitch, Andrei, Zhylik, Alexei, Ulyanenkova, Tatjana, Myronov, Maksym and Ulyanenkov, Alexander P. (2015) Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction. Journal of applied crystallography, Volume 48 (Number 3). pp. 655-665. 00655. doi:10.1107/S1600576715005397

Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V. , Dolbnya, I. P., Halpin, John E., Patchett, D. , Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108 . pp. 13-18. doi:10.1016/j.sse.2014.12.004

Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Leadley, D. R. (David R.) (2015) Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823 . pp. 571-574. doi:10.4028/www.scientific.net/MSF.821-823.571

Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi: 10.4028/www.scientific.net/MSF.821-823.624

Shi, Q., Zudov, M. A., Morrison, Christopher and Myronov, Maksym (2015) Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields. Physical Review B (Condensed Matter and Materials Physics), 91 (20). pp. 1-5. 201301(R). doi:10.1103/PhysRevB.91.201301

Dushenko, Sergey, Koike, Masato, Ando, Yuuichiro , Shinjo, Teruya, Myronov, Maksym and Shiraishi, Masashi (2015) Experimental demonstration of room-temperature spin transport in n-type Germanium epilayers. Physical Review Letters, 114 (19). pp. 1-6. 196602 . doi:10.1103/PhysRevLett.114.196602

Ulyanenkova, Tatjana, Myronov, Maksym and Ulyanenkov, Alex (2015) Boron doped cubic silicon probed by high resolution X-ray diffraction. physica status solidi (c), 12 (3). pp. 255-258. doi:10.1002/pssc.201400102

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electron–phonon and hole–phonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002

Newton, P. J., Llandro, J., Mansell, R., Holmes, S. N., Morrison, Christopher, Foronda, Jamie, Myronov, Maksym, Leadley, D. R. (David R.) and Barnes, C. H. W. (2015) Magnetotransport in p-type Ge quantum well narrow wire arrays. Applied Physics Letters, 106 (17). 172102. doi:10.1063/1.4919053

2014

Morrison, Christopher, Wiśniewski, P., Rhead, Stephen, Foronda, Jamie, Leadley, D. R. (David R.) and Myronov, Maksym (2014) Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas. Applied Physics Letters, Volume 105 (Number 18). p. 182401. doi:10.1063/1.4901107

Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, Maksym, Leadley, D. R. (David R.) and Paul, D. J. (2014) Ge/SiGe quantum confined stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm. Optics Express, Volume 22 (Number 16). Article number 19284. doi:10.1364/OE.22.01914119284

Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. doi:10.1016/j.sse.2014.04.015

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R. (David R.), Morozov, D. V., Myronov, Maksym, Parker, E. H. C., Prest, M. J., Prunnila, Mika, Sudiwala, R. V., Whall, Terry E. and Mauskopf, P. D. (2014) A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters, Volume 105 (Number 4). Article number 043509. doi:10.1063/1.4892069

Rhead, S., Halpin, John E., Shah, V. A., Myronov, Maksym, Patchett, D. H., Allred, Phil, Kachkanov, V., Dolbnya, I. P., Reparaz, J. S., Wilson, Neil R., Sotomayor Torres, C. M. and Leadley, D. R. (David R.) (2014) Tensile strain mapping in flat germanium membranes. Applied Physics Letters, Volume 104 (Number 17). Article number 172107. doi:10.1063/1.4874836

Leadley, D. R. (David R.), Prest, M. J. (Martin J.), Ahopelto, Jouni, Brien, Tom, Gunnarsson, David, Mauskopf, Phil, Muhonen, Juha, Myronov, Maksym, Nguyen, Hung, Parker, Evan H. C., Prunnila, Mika, Richardson-Bullock, J. S., Shah, V. A., Whall, Terry E. and Zhao, Q. T. (2014) Silicon-based cooling elements. In: Balestra, Francis, (ed.) Beyond CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 303-330. ISBN 9781848216549

Leadley, D. R. (David R.), Shah, V. A., Ahopelto, Jouni, Alzina, Francesc, Chávez-Ángel, Emigdio, Muhonen, Juha, Myronov, Maksym, Nassiopoulou, Androula G., Nguyen, Hung, Parker, E. H. C., Pekola, Jukka, Prest, M. J., Prunnila, Mika, Reparaz, Juan Sebastian, Shchepetov, Andrey, Sotomayor-Torres, Clivia, Valalaki, Katerina and Whall, Terry E. (2014) Thermal isolation through nanostructuring. In: Balestra, Francis, (ed.) Beyond-CMOS Nanodevices. Nanoscience and Nanotechnology Series, Volume 1 . Wiley-ISTE, pp. 331-363. ISBN 9781848216549

Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118

Dumas, D. C. S., Gallacher, Kevin, Millar, R., MacLaren, I., Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (Professor of Semiconductor Devices)‏ (2014) Silver antimony Ohmic contacts to moderately doped n-type germanium. Applied Physics Letters, Volume 104 (Number 16). Article number 162101. doi:10.1063/1.4873127

(2014) High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, Volume 115 (Number 14). Article number 144307. doi:10.1063/1.4870807

Trushkevych, Oksana, Shah, V. A., Myronov, Maksym, Halpin, John E., Rhead, S., Prest, M. J. (Martin J.), Leadley, D. R. (David R.) and Edwards, R. S. (Rachel Sian) (2014) Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes. Science and Technology of Advanced Materials, Volume 15 (Number 2). Article number 025004. doi:10.1088/1468-6996/15/2/025004

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392

Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.) (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. doi:10.7567/JJAP.53.04EH02

Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863

Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164

Patchett, David, Myronov, Maksym, Rhead, Stephen, Halpin, John E. and Leadley, D. R. (David R.) (2014) Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate. In: 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, 2-4 Jun 2014 pp. 71-72. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874654

Nguyen, Van Huy, Myronov, Maksym, Allred, Phil, Halpin, John E., Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2014) Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 121-124. ISSN 2330-5738. doi:10.1109/ULIS.2014.6813913

Dumas, D. C. S., Gallacher, Kevin, Rhead, Stephen, Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (2014) Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm. Optics Express, Volume 22 (Number 16). 19284-19292 . doi:10.1364/OE.22.019284

Halpin, John E., Myronov, Maksym, Rhead, Stephen and Leadley, D. R. (David R.) (2014) N-type SiGe/Ge superlattice structures for terahertz emission. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 , Singapore, 2-4 Jun 2014. Published in: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International pp. 65-66. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874635

Allred, Phil, Myronov, Maksym, Rhead, S., Warburton, R., Intermite, G., Buller, G. and Leadley, D. R. (David R.) (2014) Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, Singapore, 02-04 Jun 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 pp. 67-68. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874639

Morrison, C., Myronov, Maksym, Foronda, Jamie, Casteleiro, Catarina, Halpin, John E., Rhead, S. D. and Leadley, D. R. (David R.) (2014) Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. In: 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore, 02-02 June 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014 pp. 105-106. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874636

Myronov, Maksym, Rhead, Stephen, Colston, Gerard B. and Leadley, D. R. (David R.) (2014) RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors. In: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 69-70. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874653

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, Stephen, Foronda, Jamie and Leadley, D. R. (David R.) (2014) Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate. In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 11-12. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874628

Norris, D. J., Qiu, Y. , Dobbie, A. (Andrew), Myronov, Maksym and Walther, T. (Thomas) (2014) Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001). Journal of Applied Physics, Volume 115 (Number 1). Article number 012003. doi:10.1063/1.4837975

Shah, V. A., Trushkevych, Oksana, Myronov, Maksym, Rhead, Stephen, Halpin, John E., Edwards, R. S. (Rachel Sian) and Leadley, D. R. (David R.) (2014) Tensile strained Ge membranes. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014 , Stockholm, Sweden, 7-9 April 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 137-140. ISSN 2330-5738. doi:10.1109/ULIS.2014.6813917

Foronda, Jamie, Morrison, Christopher, Myronov, Maksym, Halpin, John E., Rhead, Stephen and Leadley, D. R. (David R.) (2014) Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure. In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, Singapore, 2-4 Jun 2014. Published in: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International pp. 111-112. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874644

2013

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096

Warburton, Ryan E., Intermite, Giuseppe, Myronov, Maksym, Allred, Phil, Leadley, D. R. (David R.), Gallacher, Kevin, Paul, Douglas J. (Professor of Semiconductor Devices), Pilgrim, Neil J., Lever, Leon J. M., Ikonic, Zoran, Kelsall, Robert W., Huante-Ceron, Edgar, Knights, Andrew P. and Buller, G. S. (Gerald S.) (2013) Ge-on-Si single-photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm. IEEE Transactions on Electron Devices, Volume 60 (Number 11). pp. 3807-3813. doi:10.1109/TED.2013.2282712

Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136

Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, Volume 114 (Number 15). Article: 154306. doi:10.1063/1.4825130

Ulyanenkova, Tatjana, Benediktovitch, Andrei, Myronov, Maksym, Halpin, John E., Rhead, Stephen and Ulyanenkov, Alexander P. (2013) Stress of homogeneous and graded epitaxial thin films studied by full-shape analysis of high resolution reciprocal space maps. Materials Science Forum, 768-769 . pp. 249-256. doi:10.4028/www.scientific.net/MSF.768-769.249

Ulyanenkova, Tatjana, Myronov, Maksym, Benediktovitch, Andrei, Mikhalychev, Alexander, Halpin, John E. and Ulyanenkov, Alexander P. (2013) Characterization of SiGe thin films using a laboratory X-ray instrument. Journal of Applied Crystallography, Volume 46 (Number 4). pp. 898-902. doi:10.1107/S0021889813010492

Jasiński, Jakub, Łukasiak, Lidia, Jakubowski, Andrzej, Casteleiro, Catarina, Whall, Terry E., Parker, Evan H. C., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel. In: Electron Technology Conference 2013, Ryn, Poland, April 16, 2013. Published in: SPIE Proceedings, 8902 ISSN 0277-786X. doi:10.1117/12.2031269

Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. doi:10.1149/2.018303jss

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. doi:10.1002/sia.4963

Wirths, S., Tiedemann, A. T., Ikonic, Zoran, Harrison, P., Holländer, B., Stoica, T., Mussler, G., Myronov, Maksym, Hartmann, J. M., Grützmacher, D., Buca, D. and Mantl, S. (2013) Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Applied Physics Letters, Volume 102 (Number 19). Number article 192103. doi:10.1063/1.4805034

Qiu, Yi, Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Walther, T. (Thomas) (2013) Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. Journal of Physics: Conference Series, Volume 471 . Article number 012031. doi:10.1088/1742-6596/471/1/012031

Whall, Terry E., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Leadley, D. R. (David R.), Prunnila, Mika, Gunnarsson, David, Brien, T., Mozonov, D. and Mauskopf, P. (2013) Cooltronics : a new low-temperature tunneling-technology based on Silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 1-4. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Intermite, Giuseppe, Warburton, Ryan E., Myronov, Maksym, Allred, Phil, Leadley, D. R. (David R.), Gallacher, Kevin, Paul, Douglas J. (Professor of Semiconductor Devices)‏ , Pilgrim, Neil J., Lever, Leon J. M., Ikonic, Zoran, Kelsall, Robert W. and Buller, G. S. (Gerald S.) (2013) Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 132-133. doi:10.1109/Group4.2013.6644406

Chavez, E., Gomis-Bresco, J., Alzina, F., Reparaz, J. S., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.) and Sotomayor Torres, C. M. (2013) Flexural mode dispersion in ultra-thin Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 185-188. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22). p. 223704. 223704. doi:10.1063/1.4842096

Shah, V. A., Myronov, Maksym, Bawden, L., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Gammon, P. M., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2013) Novel fabrication technique for Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 181-184. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527

Velha, Philippe, Dumas, Derek C., Gallacher, Kevin, Millar, Ross, Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (Professor of Semiconductor Devices)‏ (2013) Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 142-143. doi:10.1109/Group4.2013.6644411

Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. and Berkutov, I. B. (2013) Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. In: 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013. Published in: 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) pp. 51-55. ISBN 9781467346696. doi:10.1109/ELNANO.2013.6552021

Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 169-172. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Xu, Bin, Li, Chuanbo, Myronov, Maksym and Fobelets, Kristel (2013) n-Si–p-Si1−xGex nanowire arrays for thermoelectric power generation. Solid-State Electronics, Volume 83 . pp. 107-112. doi:10.1016/j.sse.2013.01.038

2012

Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, Volume 13 (Number 5). Article number 055002. doi:10.1088/1468-6996/13/5/055002

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476

Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Volume 5 (Number 7). 071301. doi:10.1143/APEX.5.071301

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. doi:10.1021/ac202929x

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. doi:10.1016/j.tsf.2011.10.102

Gallacher, Kevin, Velha, P., Paul, Douglas J. (Professor of Semiconductor Devices)‏ , MacLaren, I., Myronov, Maksym and Leadley, D. R. (David R.) (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, Vol.100 (No.2). 022113. doi:10.1063/1.3676667

Walther, Thomas, Norris, David J., Qiu, Yang, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy. Physica Status Solidi (a), Volume 210 (Number 1). pp. 187-190. doi:10.1002/pssa.201200363

Myronov, Maksym, Shah, V. A., Rhead, S. and Leadley, D. R. (David R.) (2012) Epitaxial growth of tensile strained SiB alloy on a Si substrate. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222493). pp. 132-133. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222493

(2012) High performance silicon optical modulators. In: Nanophotonics and Micro/Nano Optics, Beijing, China, 5 Nov 2012. Published in: Proceedings of SPIE - International Society for Optical Engineering, Volume 8564 Article number 85640H. ISSN 0277-786X. doi:10.1117/12.2001296

Lever, L., Ikonić, Z., Valavanis, A., Kelsall, Robert W., Myronov, Maksym, Leadley, D. R. (David R.), Hu, Y., Owens, N., Gardes, F. Y. and Reed, G. T. (2012) Optical absorption in highly strained Ge/SiGe quantum wells : the role of Γ→Δ scattering. Journal of Applied Physics, Volume 112 (Number 12). Article number 123105. doi:10.1063/1.4768935

Xu, B., Li, C., Myronov, Maksym, Durrani, Z. A. K and Fobelets, K. (2012) Si 1-xGe x nanowire arrays for thermoelectric power generation. In: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, Berkeley, CA, USA, 4-6 June 2012. Published in: Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International Article number 6222465. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222501

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.) (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. doi:10.1149/2.063205jes

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451

Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Understanding the role of the low temperature seed layer in the growth of low defect relaxed germanium layers on (111) silicon by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings Article number 622250. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222501

2011

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330

Lever, L., Hu, Youfang, Myronov, Maksym, Liu, Xianping, Owens, N. (Nathan), Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R. (David R.), Reed, G. T. and Kelsall, Robert W. (2011) Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, Vol.36 (No.21). pp. 4158-4160. doi:10.1364/OL.36.004158

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. doi:10.1109/TED.2011.2160679

Kawamura, Y., Uematsu, M., Hoshi, Y., Sawano, K., Myronov, Maksym, Shiraki, Y., Haller, E. and Itoh, K. H. (2011) Self-diffusion in compressively strained Ge. Journal of Applied Physics, Vol.110 (No.3). Article 034906 . doi:10.1063/1.3608171

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. doi:10.1016/j.sse.2011.03.005

Zhylik, Alexei, Benediktovich, A., Ulyanenkov, Alexander P., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, Tatjana (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of applied physics, 109 (12). 123714. doi:10.1063/1.3597828

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. doi:10.1016/j.sse.2011.01.036

Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. doi:10.1116/1.3530594

Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. doi:10.1016/j.jcrysgro.2010.10.133

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. doi:10.1109/LED.2010.2089968

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022

(2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. doi:10.1143/JJAP.50.04DC17

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.) (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. doi:10.1088/0022-3727/44/5/055102

Zhylik, A., Rinaldi, F., Myronov, Maksym, Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. doi:10.1002/pssa.201184260

2010

Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.) (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . doi:10.1088/0268-1242/25/8/085007

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. doi:10.1063/1.3311556

Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.) (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. doi:10.1149/1.3482159

Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. doi:10.1002/pssc.201000255

Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van Huy, Parker, Evan H. C. and Leadley, D. R. (David R.) (2010) Investigation of the thermal stability of strained Ge layers grown at low temperature by reduced-pressure chemical vapour deposition on Si0.2Ge0.8 relaxed buffers. In: 2010 MRS Spring Meeting & Exhibit, San Francisco, CA, 5-10 Apr 2010. Published in: MRS Proceedings, Vol.1252 pp. 104-106. ISSN 1946-4274. doi:10.1557/PROC-1252-I04-06

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, Maksym, Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803

Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061

Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044

2009

Myronov, Maksym, Leadley, D. R. (David R.) and Shiraki, Y. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual. Applied Physics Letters, Vol.94 (No.9). 092108. doi:10.1063/1.3090034

2008

Shah, V. A., Dobbie, A., Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John and Leadley, D. R. (David R.) (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. doi:10.1063/1.3023068

Myronov, Maksym, Shiraki, Y., Mouri, T. and Itoh, K. M. (2008) Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well. Thin Solid Films, Vol.517 (No.1). pp. 359-361. doi:10.1016/j.tsf.2008.08.061

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Myronov, Maksym and Mironov, O. A. (2008) Overheating effect and hole-phonon interaction in SiGe heterostructures. Low Temperature Physics, Volume 34 (Number 11). pp. 943-946. doi:10.1063/1.3009592

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu F., Leadley, D. R. (David R.), Myronov, Maksym, von Kanel, H. and Mironov, O. A. (2008) A new method of investigating the quantum channel surface. Journal of Physics-Condensed Matter, Vol.20 (No.22). Article no. 224024 . doi:10.1088/0953-8984/20/22/224024

Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu., Suslov, A. V., Galperin, Y. M., Vinokur, Valerii M., Myronov, Maksym, Mironov, O. A. and Leadley, D. R. (David R.) (2008) Magnetotransport in low-density p-Si/SiGe heterostructures : from metal through hopping insulator to Wigner glass. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.8). article no. 085327. doi:10.1103/PhysRevB.77.085327

Myronov, Maksym, Sawano, Kentarou, Itoh, Kohei M. and Shiraki, Yasuhiro (2008) Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well. Applied Physics Express, Vol.1 (No.2). Article: 021402. doi:10.1143/APEX.1.021402

2007

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Gal'perin, Yu. M., Vinokur, V. M., Myronov, Maksym and Mironov, O. A. (2007) Static and high-frequency hole transport in p-Si/SiGe heterostructures in the extreme quantum limit. JETP Letters, Vol.86 (No.4). pp. 244-248. doi:10.1134/S0021364007160059

2006

Berkutov, I. B., Komnik, Yu. F., Andrievskii, V. V., Mironov, O. A., Myronov, Maksym and Leadley, D. R. (David R.) (2006) Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure. Low Temperature Physics, Volume 32 (Number 7). pp. 683-688. doi:10.1063/1.2216282

2004

Myranov, Maksym, Mironov, O. A., Durov, Sergiy, Whall, Terry E., Parker, Evan H. C., Hackbarth, T., Höck, G., Herzog, H.-J. and König, U. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor. Applied Physics Letters, Vol.84 (No.4). pp. 610-612. doi:10.1063/1.1643532

2003

Irisawa, T., Myranov, Maksym, Mironov, O. A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. doi:10.1063/1.1558895

2002

Myranov, Maksym, Phillips, P. J. (Peter J.), Whall, Terry E. and Parker, Evan H. C. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.19). pp. 3557-3559. doi:10.1063/1.1478779

Myranov, Maksym, Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. doi:10.1063/1.1473690

2001

Myronov, Maksym (2001) Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si[subscript 1-x]Ge[subscript x] channel grown by SS-MBE on Si[subscript 1-y]Ge[subscript y]/Si(001) virtual substrates. PhD thesis, University of Warwick.

2000

Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, O. A., Parker, Evan H. C. and Whall, Terry E. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. doi:10.1063/1.125963