Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, M., Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. ISSN 0038-1101

Rhead, S., Halpin, John E., Shah, V. A., Myronov, Maksym, Patchett, D. H., Allred, P. S., Kachkanov, V., Dolbnya, I. P., Reparaz, J. S., Wilson, Neil R., Sotomayor Torres, C. M. and Leadley, D. R. (David R.). (2014) Tensile strain mapping in flat germanium membranes. Applied Physics Letters, Volume 104 (Number 17). Article number 172107. ISSN 0003-6951

Dumas, D. C. S., Gallacher, K., Millar, R., MacLaren, I., Myronov, Maksym, Leadley, D. R. (David R.) and Paul, D. J.. (2014) Silver antimony Ohmic contacts to moderately doped n-type germanium. Applied Physics Letters, Volume 104 (Number 16). Article number 162101. ISSN 0003-6951

. (2014) High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, Volume 115 (Number 14). Article number 144307. ISSN 0021-8979

Trushkevych, Oksana, Shah, V. A., Myronov, Maksym, Halpin, John E., Rhead, S., Prest, M. J. (Martin J.), Leadley, D. R. (David R.) and Edwards, R. S. (Rachel S.). (2014) Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes. Science and Technology of Advanced Materials, Volume 15 (Number 2). Article number 025004. ISSN 1468-6996

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, 1978-, Huband, S., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. ISSN 0003-6951

Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. ISSN 0734-2101

Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.). (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. ISSN 0021-4922

Norris, D. J., Qiu, Y. , Dobbie, A. (Andrew), Myronov, Maksym and Walther, T. (Thomas). (2014) Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001). Journal of Applied Physics, Volume 115 (Number 1). Article number 012003. ISSN 0021-8979

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.). (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. ISSN 0021-8979

Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R.. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. ISSN 1528-7483

Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2013) High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, Volume 114 (Number 15). Article: 154306. ISSN 0021-8979

Ulyanenkova, Tatjana, Myronov, Maksym, Benediktovitch, Andrei, Mikhalychev, Alexander, Halpin, John E. and Ulyanenkov, Alexander P.. (2013) Characterization of SiGe thin films using a laboratory X-ray instrument. Journal of Applied Crystallography, Volume 46 (Number 4). pp. 898-902. ISSN 0021-8898

Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.). (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. ISSN 2162-8769

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. ISSN 0142-2421

Wirths, S., Tiedemann, A. T., Ikonic, Z., Harrison, P., Holländer, B., Stoica, T., Mussler, G., Myronov, Maksym, Hartmann, J. M., Grützmacher, D., Buca, D. and Mantl, S.. (2013) Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Applied Physics Letters, Volume 102 (Number 19). Number article 192103. ISSN 0003-6951

Qiu, Yi, Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Walther, T. (Thomas). (2013) Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. Journal of Physics: Conference Series, Volume 471 . Article number 012031. ISSN 1742-6596

Whall, Terry E., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Leadley, D. R. (David R.), Prunnila, M., Gunnarsson, D., Brien, T., Mozonov, D. and Mauskopf, P. (2013) Cooltronics : a new low-temperature tunneling-technology based on Silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 1-4.

Intermite, G., Warburton, R. E., Myronov, Maksym, Allred, P., Leadley, D. R. (David R.), Gallacher, K., Paul, D. J., Pilgrim, N. J., Lever, L. J. M., Ikonic, Z. , Kelsall, R. W. and Buller, G. S. (2013) Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 132-133.

Chavez, E., Gomis-Bresco, J., Alzina, F., Reparaz, J. S., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.) and Sotomayor Torres, C. M. (2013) Flexural mode dispersion in ultra-thin Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 185-188.

Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, M., Gunnarsson, D., Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215.

Gammon, P. M., Pérez-Tomás, A., Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.). (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. ISSN 0021-8979

Shah, V. A., Myronov, Maksym, Bawden, L., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Gammon, P. M., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2013) Novel fabrication technique for Ge membranes. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 181-184.

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120.

Velha, Philippe, Dumas, Derek C., Gallacher, Kevin, Millar, Ross, Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (2013) Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), , Seoul, 28-30 Aug 2013. Published in: IEEE International Conference on Group IV Photonics GFP pp. 142-143.

Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. and Berkutov, I. B. (2013) Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. In: 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013. Published in: 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) pp. 51-55.

Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 169-172.

Xu, Bin, Li, Chuanbo, Myronov, Maksym and Fobelets, Kristel. (2013) n-Si–p-Si1−xGex nanowire arrays for thermoelectric power generation. Solid-State Electronics, Volume 83 . pp. 107-112. ISSN 0038-1101

Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2012) Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, Volume 13 (Number 5). Article number 055002. ISSN 1468-6996

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. ISSN 0003-6951

Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Volume 5 (Number 7). 071301. ISSN 1882-0778

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. ISSN 0003-2700

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. ISSN 0040-6090

Gallacher, K., Velha, P., Paul, D. J., MacLaren, I., Myronov, Maksym and Leadley, D. R. (David R.). (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, Vol.100 (No.2). 022113. ISSN 0003-6951

Walther, Thomas, Norris, David J., Qiu, Yang, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy. Physica Status Solidi (a), Volume 210 (Number 1). pp. 187-190. ISSN 0031-8965

Myronov, Maksym, Shah, V. A., Rhead, S. and Leadley, D. R. (David R.) (2012) Epitaxial growth of tensile strained SiB alloy on a Si substrate. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222493). pp. 132-133.

(2012) High performance silicon optical modulators. In: Nanophotonics and Micro/Nano Optics, Beijing, China, 5 Nov 2012. Published in: Proceedings of SPIE - International Society for Optical Engineering, Volume 8564 Article number 85640H.

Lever, L., Ikonić, Z., Valavanis, A., Kelsall, R. W., Myronov, Maksym, Leadley, D. R. (David R.), Hu, Y., Owens, N., Gardes, F. Y. and Reed, G. T.. (2012) Optical absorption in highly strained Ge/SiGe quantum wells : the role of Γ→Δ scattering. Journal of Applied Physics, Volume 112 (Number 12). Article number 123105. ISSN 0021-8979

Xu, B., Li, C., Myronov, Maksym, Durrani, Z. A. K and Fobelets, K. (2012) Si 1-xGe x nanowire arrays for thermoelectric power generation. In: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, Berkeley, CA, USA, 4-6 June 2012. Published in: Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International Article number 6222465.

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.). (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. ISSN 0013-4651

Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49.

Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Understanding the role of the low temperature seed layer in the growth of low defect relaxed germanium layers on (111) silicon by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings Article number 622250.

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. ISSN 0003-6951

Lever, L., Hu, Youfang, Myronov, Maksym, Liu, Xianping, Owens, N. (Nathan), Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R. (David R.), Reed, G. T. and Kelsall, Robert W.. (2011) Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, Vol.36 (No.21). pp. 4158-4160. ISSN 0146-9592

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C.. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. ISSN 0018-9383

Kawamura, Y., Uematsu, M., Hoshi, Y., Sawano, K., Myronov, Maksym, Shiraki, Y., Haller, E. and Itoh, K. H.. (2011) Self-diffusion in compressively strained Ge. Journal of Applied Physics, Vol.110 (No.3). Article 034906 . ISSN 0021-8979

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. ISSN 0038-1101

Zhylik, A., Benediktovich, A., Ulyanenkov, A., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, T.. (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of Applied Physics, Vol.109 (No.12). p. 123714. ISSN 0021-8979

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.). (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. ISSN 0038-1101

Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, D., Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. ISSN 0003-6951

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.). (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. ISSN 1071-1023

Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.). (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. ISSN 0022-0248

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C.. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. ISSN 0741-3106

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. ISSN 0040-6090

. (2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. ISSN 0021-4922

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. ISSN 0022-3727

Zhylik, A., Rinaldi, F., Myronov, Maksym, Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P.. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. ISSN 1862-6300

Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.). (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . ISSN 0268-1242

Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. ISSN 0021-8979

Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.). (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. ISSN 1099-0062

Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C.. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. ISSN 1862-6351

Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van Huy, Parker, Evan H. C. and Leadley, D. R. (David R.) (2010) Investigation of the thermal stability of strained Ge layers grown at low temperature by reduced-pressure chemical vapour deposition on Si0.2Ge0.8 relaxed buffers. In: 2010 MRS Spring Meeting & Exhibit, San Francisco, CA, 5-10 Apr 2010. Published in: MRS Proceedings, Vol.1252 pp. 104-106.

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, Maksym, Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803

Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen). (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. ISSN 1742-6596

Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc. (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. ISSN 1742-6596

Myronov, Maksym, Leadley, D. R. (David R.) and Shiraki, Y.. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual. Applied Physics Letters, Vol.94 (No.9). 092108. ISSN 0003-6951

Shah, V. A., Dobbie, A. (Andrew), Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John, 1980- and Leadley, D. R. (David R.). (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. ISSN 0003-6951

Myronov, Maksym, Shiraki, Y., Mouri, T. and Itoh, K. M.. (2008) Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well. Thin Solid Films, Vol.517 (No.1). pp. 359-361. ISSN 0040-6090

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Myronov, Maksym and Mironov, O. A.. (2008) Overheating effect and hole-phonon interaction in SiGe heterostructures. Low Temperature Physics, Volume 34 (Number 11). pp. 943-946. ISSN 1063-777X

Berkutov, I. B., Andrievskii, V. V., 1953-, Komnik, Yu F., Leadley, D. R. (David R.), Myronov, Maksym, von Kanel, H. and Mironov, O. A.. (2008) A new method of investigating the quantum channel surface. Journal of Physics-Condensed Matter, Vol.20 (No.22). Article no. 224024 . ISSN 0953-8984

Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu., Suslov, A. V., Galperin, Y. M., Vinokur, Valerii M., Myronov, Maksym, Mironov, O. A. and Leadley, D. R. (David R.). (2008) Magnetotransport in low-density p-Si/SiGe heterostructures : from metal through hopping insulator to Wigner glass. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.8). article no. 085327. ISSN 1098-0121

Myronov, Maksym, Sawano, Kentarou, Itoh, Kohei M. and Shiraki, Yasuhiro. (2008) Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well. Applied Physics Express, Vol.1 (No.2). Article: 021402. ISSN 1882-0778

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Gal'perin, Yu. M., Vinokur, V. M., Myronov, Maksym and Mironov, O. A.. (2007) Static and high-frequency hole transport in p-Si/SiGe heterostructures in the extreme quantum limit. JETP Letters, Vol.86 (No.4). pp. 244-248. ISSN 0021-3640

Berkutov, I. B., Komnik, Yu. F., Andrievskii, V. V., Mironov, O. A., Myronov, Maksym and Leadley, D. R. (David R.). (2006) Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure. LOW TEMPERATURE PHYSICS, 32 (7). pp. 683-688. ISSN 1063-777X

Myranov, Maksym, Mironov, O. A., Durov, Sergiy, Whall, Terry E., Parker, Evan H. C., Hackbarth, T., Höck, G., Herzog, H.-J. and König, U.. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor. Applied Physics Letters, Vol.84 (No.4). pp. 610-612. ISSN 0003-6951

Irisawa, T., Myranov, Maksym, Mironov, O. A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y.. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. ISSN 0003-6951

Myranov, Maksym, Phillips, P. J. (Peter J.), Whall, Terry E. and Parker, Evan H. C.. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.19). pp. 3557-3559. ISSN 0003-6951

Myranov, Maksym, Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C.. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. ISSN 0003-6951

Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, O. A., Parker, Evan H. C. and Whall, Terry E.. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. ISSN 0003-6951