Number of items: 1.
Great Britain. Dept. of Trade and Industry (DTI)
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N.
(2008)
SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator.
Microelectronic Engineering, Volume 85
(Number 4).
pp. 704-709.
doi:10.1016/j.mee.2007.12.073
ISSN 0167-9317.
This list was generated on Wed Apr 24 18:36:58 2024 BST.