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Group by: Official Date | Item Type | Funder | No Grouping
Jump to: 2012 | 2010 | 2009 | 2008 | 2007
Number of items: 7.

2012

Donnellan, B. T., Roberts, G. J., Mawby, P. A. (Philip A.) and Bryant, Angus T. (2012) Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. Microelectronics Reliability, Vol.52 (No.3). pp. 497-502. doi:10.1016/j.microrel.2011.12.007

2010

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A. and Mawby, P. A. (2010) Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12). p. 124512. doi:10.1063/1.3449057

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A. and Mawby, P. A. (2010) Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. In: 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009. Published in: Materials Science Forum, Vol.645-648 pp. 889-892. ISBN *****************. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.645-648.889

2009

Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A. and Mawby, P. A. (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. doi:10.1063/1.3255976

2008

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. doi:10.1063/1.2987421

Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073

2007

Bryant, A. T., Roberts, G. J., Walker, A. and Mawby, P. A. (Philip A.) (2007) Fast inverter loss simulation and silicon carbide device evaluation for hybrid electric vehicle drives. In: 4th Power Conversion Conference (PCC-Nagoya 2007), Nagoya, Japan, 2-5 Apr 2007. Published in: 2007 Power Conversion Conference - Nagoya, Vols 1-3 pp. 1017-1024. ISBN 9781424408436.

This list was generated on Tue May 24 03:32:42 2022 BST.
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