Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. ISSN 0003-6951

Bouchenoire, Laurence, Morris, Richard J. H. and Hase, Thomas P. A.. (2012) A silicon 〈111〉 phase retarder for producing circularly polarized x-rays in the 2.1-3 keV energy range. Applied Physics Letters, Vol.101 (No.6). 064107. ISSN 0003-6951

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, Richard, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. ISSN 0003-2700

Linhart, W. M., Chai, J., Morris, R. J. H. (Richard J. H.), Dowsett, M. G., McConville, C. F. (Chris F.), Durbin, S. and Veal, T. D. (Tim D.). (2012) Giant reduction of InN surface electron accumulation : compensation of surface donors by Mg dopants. Physical Review Letters, Vol.109 (No.24). Article no. 247605. ISSN 0031-9007

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.) (2012) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis . n/a-n/a. ISSN 0142-2421 (In Press)

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, M. and Leadley, D. R. (David R.). (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. ISSN 0013-4651

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. ISSN 0003-6951

Liu, J., Chater, R. J., Morris, R. J. H. (Richard J. H.) and Skinner, S. J.. (2011) Oxygen surface exchange and diffusion studies of La2Mo2O9 in different exchange atmospheres. Solid State Ionics, Vol.189 (No.1). pp. 39-44. ISSN 0167-2738

Muhonen, Juha, Prest, M. J., Prunnila, Mika, Gunnarsson, D., Shah, V. A., Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. ISSN 0003-6951

Cook, Robert M., Pegg, Lara-Jane, Kinnear, Sophie L., Hutter, Oliver S., Morris, Richard J. H. and Hatton, Ross A.. (2011) An electrode design rule for organic photovoltaics elucidated using molecular nanolayers. Advanced Energy Materials, Vol.1 (No.3). pp. 440-447. ISSN 1614-6832

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D: Applied Physics, Vol.44 (No.5). 055102. ISSN 0022-3727

Morris, R. J. H. (Richard J. H.) and Dowsett, M. G.. (2011) Ion, sputter and useful ion yields for accurate quantification of Si1−xGex(0 < x < 1) using ultra low energy O2+ SIMS. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 543-546. ISSN 0142-2421

Dowsett, M. G., Morris, R. J. H. (Richard J. H.), Hand, M. (Matthew), Grigg, A. T., Walker, David, 1978- and Beanland, R.. (2011) The influence of beam energy on apparent layer thickness using ultralow energy O2+ SIMS on surface Si1−xGex. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 211-213. ISSN 0142-2421

Morris, R. J. H. (Richard J. H.), Fearn, S., Perkins, J., Kilner, J., Dowsett, M. G., Beigalski, M. D. and Rouleau, C. M.. (2011) The use of low-energy SIMS (LE-SIMS) for nanoscale fuel cell material development. Surface and Interface Analysis, Vol.43 (No.1-2). pp. 635-638. ISSN 0142-2421

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. ISSN 0022-3727

Perkins, James M., Fearn, Sarah, Cook, Stuart N., Srinivasan, Rajagopalan, Rouleau, Chris M., Christen, Hans M., West, Geoff D., Morris, R. J. H. (Richard J. H.), Fraser, Hamish L., Skinner, Stephen J., Kilner, John A. and McComb, David W.. (2010) Anomalous oxidation states in multilayers for fuel cell applications. Advanced Functional Materials, Vol.20 (No.16). pp. 2664-2674. ISSN 1616-301X

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Parbrook, P. J. and McConville, C. F. (Chris F.). (2010) Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/InxGa1-xN structures using optical conductivity enhancement. Rapid Communications in Mass Spectrometry, Vol.24 (No.14). pp. 2122-2126. ISSN 0951-4198

Liu, J., Chater, R. J., Hagenhoff, B., Morris, R. J. H. (Richard J. H.) and Skinner, S. J.. (2010) Surface enhancement of oxygen exchange and diffusion in the ionic conductor La2Mo2O9. Solid State Ionics, Vol.181 (No..17-18). pp. 812-818. ISSN 0167-2738

Mironov, Oleg A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I. (Vladimir Ivanovich), Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, 1959-, Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. ISSN 0022-2291

Mironov, O. A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I. (Vladimir Ivanovich), Isella, G., Kummer, M., von Kaenel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, 1959-, Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. ISSN 0022-2291

Morris, R. J. H. (Richard J. H.) and Dowsett, M. G.. (2009) Ion yields and erosion rates for Si1−xGex(0x1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV. Journal of Applied Physics, Vol.105 (No.11). p. 4316. ISSN 0021-8979

Parsons, Jonathan, 1981-, Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John, 1980-. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. ISSN 0003-6951

Beer, C. (Chris), Whall, Terry E., Morris, R. J. H. (Richard J. H.), Parker, E. H. C. and Leadley, D. R. (David R.) (2008) Anomalous Ge diffusion effects during Ge-condensation. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: ULIS 2008: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 207-210.

Parsons, J., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Parker, Evan H. C. (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, 13-14 Mar 2008. Published in: ULIS 2008 : Proceedings of the 9th International conference on ultimate integration on silicon pp. 211-214.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Dalal, S. H., Baptista, D. L., Teo, K. B. K. and Milne, W. I.. (2007) Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis. Surface and Interface Analysis, Vol.39 (No.11). pp. 898-901. ISSN 0142-2421

Parsons, J., Parker, E. H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, A. D. (2007) Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ]. Applied Physics Letters, Vol.91 (No.18). ISSN 0003-6951

Franco, N., Alves, E., Vallera, A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Parker, E. H. C. and Barradas, N. P. (2006) RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications. In: 17th International Conference on Ion Beam Analysis, Seville, Spain, June 26 - July 01, 2005. Published in: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol.249 (No.1-2). pp. 878-881.

Morris, R. J. H. (Richard J. H.), Dowsett, M. G. and Chang, R. J. H. (2006) Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials. In: 15th International Conference on Secondary Ion Mass Spectrometry (SIMS XV), Univ Manchester, Manchester, ENGLAND, SEP 12-16, 2005. Published in: Surface Science, 252 (19 Sp. Iss. SI). pp. 7221-7223.

Fearn, S., McPhail, D. S., Morris, R. J. H. (Richard J. H.) and Dowsett, M. G. (2006) Sodium and hydrogen analysis of room temperature glass corrosion using low energy CsSIMS. In: 15th International Conference on Secondary Ion Mass Spectrometry (SIMS XV), Univ Manchester, Manchester, ENGLAND, SEP 12-16, 2005. Published in: Surface Science, 252 (19 Sp. Iss. SI). pp. 7070-7073.

Guzman de la Mata, B., Dowsett, M. G. and Morris, R. J. H. (Richard J. H.). (2006) Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ion-mass spectroscopy experiments. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24 (4). pp. 953-956. ISSN 0734-2101

Morris, R. J. H. (Richard J. H.) (2003) Optimisation studies on strain-engineered Germanium heterostructures. PhD thesis, University of Warwick.

Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G.. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. ISSN 0003-6951