Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2013) The impact of silicon carbide technology on grid-connected Distributed Energy resources. In: 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE),, Lyngby, 6-9 Oct 2013. Published in: 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE), pp. 1-5.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.). (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. ISSN 0885-8993

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.). (2012) Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, Volume 33 (Number 7). pp. 1039-1041. ISSN 0741-3106

Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Alatise, Olayiwola M., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2012) Improved energy efficiency using an IGBT/SiC-Schottky diode pair. In: International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, U.S.A., Sep 11-16, 2011. Published in: Materials Science Forum, 717-720 pp. 1147-1150.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George. (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. ISSN 0741-3106

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George and Koh, Adrian. (2011) Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.11 (No.1). pp. 157-163. ISSN 1530-4388

Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2011) Super-junction trench MOSFETs for improved energy conversion efficiency. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-5.

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294.

Alatise, Olayiwola M., Olsen, Sarah H., O'Neill, Anthony G. and Majhi, Prashant. (2010) Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks. Microelectronic Engineering, Vol.87 (No.11). pp. 2196-2199. ISSN 0167-9317

Alatise, Olayiwola M., Olsen, Sarah H. and O'Neill, Anthony G.. (2010) Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics. Solid-State Electronics, Vol.54 (No.6). pp. 628-634. ISSN 00381101

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Khan, Khalid, Parkin, Jim, Koh, Adrian and Rutter, Phil (2010) Repetitive avalanche cycling of low-voltage power trench n-MOSFETs. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010. Published in: Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European pp. 273-276.

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Khan, Khalid, Dr., Koh, Adrian and Rutter, Philip. (2010) Understanding linear-mode robustness in low-voltage trench power MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.10 (No.1). pp. 123-129. ISSN 1530-4388

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Khan, Khalid, Dr., Parkin, Jim, Koh, Adrian and Rutter, Philip. (2010) The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs. IEEE Transactions on Electron Devices, Vol.57 (No.7). pp. 1651-1658. ISSN 0018-9383

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G.. (2010) The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3). pp. 327-335. ISSN 0038-1101

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Parkin, Jim, Khan, Khalid, Dr., Koh, Adrian and Rutter, Philip. (2010) The impact of trench depth on the reliability of repetitively avalanched low-Voltage discrete power trench nMOSFETs. IEEE Electron Device Letters, Vol.31 (No.7). pp. 713-715. ISSN 0741-3106

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G.. (2009) Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter. IEEE Transactions on Electron Devices, Vol.56 (No.12). pp. 3041-3048. ISSN 0018-9383

Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G. and Majhi, Prashant. (2009) Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks. IEEE Transactions on Electron Devices, Vol.56 (No.10). pp. 2277-2284. ISSN 0018-9383

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, U.S.A., Dec 9-11, 2009. Published in: 2009 International Semiconductor Device Research Symposium (ISDRS 2009) pp. 1-2.

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2008) Improved analog performance of strained Si n-MOSFETs on thin SiGe strained relaxed buffers. In: 38th European Solid State Device Research Conference (ESSDERC), Edinburgh International Conference Centre, Edinburgh, United Kingdom, Sep 15-19, 2008. Published in: Proceedings of the 38th European Solid-State Device Research Conference (ESSDERC 2008) pp. 99-102.

Olsen, Sarah H., Dobrosz, Peter, Agaiby, Rouzet M.B., Tsang, Yuk Lun, Alatise, Olayiwola M., Bull, Steve J. (Stephen John), 1963-, O’Neill, Anthony G., Moselund, Kirsten E., Ionescu, Adrian M. and Majhi, Prashant. (2008) Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing, Vol.11 (No.5-6). pp. 271-278. ISSN 1369-8001