2021

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2021) Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs. IEEE Transactions on Power Electronics, 36 (3). pp. 3279-3291. doi:10.1109/TPEL.2020.3012298

Shen, Chengjun, Jahdi, Saeed, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel , Aithal, Avinash and Mellor, Phil (2021) Prospects and challenges of 4H-SiC thyristors in protection of HB-MMC-VSC-HVDC converters. IEEE Open Journal of Power Electronics, 2 . pp. 145-154. doi:10.1109/ojpel.2021.3060942

2020

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2020) Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs. IEEE Transactions on Industry Applications . doi:10.1109/TIA.2020.3045120

Agbo, S. N., Ortiz Gonzalez, Jose Angel, Wu, R., Jahdi, S. and Alatise, Olayiwola M. (2020) UIS performance and ruggedness of stand-alone and cascode SiC JFETs. Microelectronics Reliability, 114 . 113803. doi:10.1016/j.microrel.2020.113803

Ortiz Gonzalez, Jose Angel, Wu, Robert, Jahdi, S. and Alatise, Olayiwola M. (2020) Performance and reliability review of 650V and 900V silicon and SiC devices : MOSFETs, cascode JFETs and IGBTs. IEEE Transactions on Industrial Electronics, 67 (9). pp. 7375-7385. doi:10.1109/TIE.2019.2945299

Agbo, S. N., Ortiz-Gonzalez, Jose Angel and Alatise, Olayiwola M. (2020) Performance of SiC cascode JFETs under single and repetitive avalanche pulses. Microelectronics Reliability, 110 . 113644. doi:10.1016/j.microrel.2020.113644

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2020) Non-intrusive methodologies for characterization of bias temperature instability in SiC power MOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 28 Apr -30 May 2020 ISBN 9781728131993. doi:10.1109/IRPS45951.2020.9129637

Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2020) Fast switching SiC cascode JFETs for EV traction inverters. In: Applied Power Electronics Conference and Exposition (APEC), Annual IEEE Conference, Virtual conference, 15-19 Mar 2020. Published in: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 3489-3496. ISBN 9781728148304. ISSN 1048-2334. doi:10.1109/APEC39645.2020.9124052

Gonzalez, Jose Ortiz, Etoz, Burhan and Alatise, Olayiwola M. (2020) Characterizing threshold voltage shifts and recovery in Schottky gate and Ohmic gate GaN HEMTs. In: 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 11-15 Oct 2020 pp. 217-224. ISBN 9781728158266. ISSN 2329-3748. doi:10.1109/ECCE44975.2020.9235650

Ortiz Gonzalez, Jose Angel, Etoz, Burhan and Alatise, Olayiwola M. (2020) Gate stresses and threshold voltage instability in normally OFF GaN HEMTs. In: 22nd European Conference on Power Electronics and Applications EPE’20 ECCE Europe, Virtual, 7-11 Sep 2020 ISBN 9789075815368. doi:10.23919/EPE20ECCEEurope43536.2020.9215865

Gonzalez, Jose Ortiz, Wu, Ruizhu and Alatise, Olayiwola M. (2020) Trade-offs between gate oxide protection and performance in SiC MOSFETs. In: 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, USA, 11-15 Oct 2020 pp. 690-697. ISBN 9781728158273. doi:10.1109/ECCE44975.2020.9235843

2019

Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2019) The potential of SiC Cascode JFETs in electric vehicle traction inverters. IEEE Transactions on Transportation Electrification, 5 (4). pp. 1349-1359. doi:10.1109/TTE.2019.2954654

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability. In: 21st European Conference on Power Electronics and Applications - EPE’19 ECCE – EUROPE Genoa, Genoa, Italy, 2-6 Sep 2019. Published in: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) ISBN 9789075815313. doi:10.23919/EPE.2019.8915508

Gonzalez, Jose Ortiz, Hedayati, M., Jahdi, S., Stark , B. H. and Alatise, Olayiwola M. (2019) Dynamic characterization of SiC and GaN devices with BTI stresses. Microelectronics Reliability, 100-101 . 113389. doi:10.1016/j.microrel.2019.06.081

Ortiz-Gonzalez, Jose Angel , Wu, Ruizhu, Nereus Agbo, Sunday and Alatise, Olayiwola M. (2019) Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications. Microelectronics Reliability, 100-101 . 113324. doi:10.1016/j.microrel.2019.06.016

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) Challenges of junction temperature sensing in SiC power MOSFETs. In: 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia), Busan, Korea (South), 27-30 May 2019 pp. 891-898.

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963 . pp. 749-752. doi:10.4028/www.scientific.net/MSF.963.749

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Characterization of BTI in SiC MOSFETs using third quadrant characteristics. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 207-210. ISBN 9781728105802. ISSN 1946-0201. doi:10.1109/ISPSD.2019.8757624

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) A novel non-intrusive technique for BTI characterization in SiC MOSFETs. IEEE Transactions on Power Electronics, 34 (6). pp. 5737-5747. doi:10.1109/TPEL.2018.2870067

2018

Gonzalez, Jose Ortiz and Alatise, Olayiwola M. (2018) Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters. In: 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 23-27 Sep 2018 pp. 837-844. ISBN 9781479973125. ISSN 2329-3748. doi:10.1109/ECCE.2018.8557810

Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa (2018) Safe-operating-area of snubberless series connected silicon and SiC power devices. In: Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 1875-1881. ISBN 9781479973132. ISSN 2329-3748. doi:10.1109/ECCE.2018.8557402

Davletzhanova, Zarina, Alatise, Olayiwola M., Bonyadi, Roozbeh, Gonzalez, Jose Ortiz, Chan, Chun Wa, Bonyadi, Yeganeh, Jennings, Mike and Mawby, P. A. (Philip A.) (2018) Impact of Leakage Currents on Voltage Sharing in Series Connected SiC Power MOSFETs and Silicon IGBT Devices. In: 20th European Conference on Power Electronics and Applications, Riga, Latvia, 17-21 September 2018. Published in: 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe) ISBN 9781538641453 .

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90 . pp. 557-562. doi:10.1016/j.microrel.2018.06.045

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90 . pp. 557-562. doi:10.1016/j.microrel.2018.06.045

2017

Hu, Borong, Ortiz Gonzalez, Jose Angel, Ran, Li, Ren, Hai, Zeng, Zheng, Lai, Wei, Gao, Bing, Alatise, Olayiwola M., Lu, Hua, Bailey, Christopher and Mawby, P. A. (Philip A.) (2017) Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Transactions on Device and Materials Reliability, 17 (4). pp. 727-737. doi:10.1109/TDMR.2017.2766692

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, P. A. (Philip A.) and Bailey, Chris (2017) Evaluation of SiC schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10). 8213 -8223. doi:10.1109/TIE.2017.2677348

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2017) An investigation of temperature sensitive electrical parameters for SiC power MOSFETs. IEEE Transactions on Power Electronics, 32 (10). 7954 -7966. doi:10.1109/TPEL.2016.2631447

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2017) Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs. Microelectronics Reliability, 76-77 . pp. 470-474. doi:10.1016/j.microrel.2017.06.082

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (2017) Impact of temperature imbalance on junction temperature identification for multiple chip modules using TSEPs. In: PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg, Deutschland, 16-18 May 2017 . Published in: Proceedings of PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ISBN 9783800744244.

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Aliyu, A. M. and Castellazzi, A. (2017) Pressure contact multi-chip packaging of SiC Schottky diodes. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, 28 May-1 Jun 2017. Published in: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ISBN 9784886860941.

Rajaguru, Pushparajah , Ortiz-Gonzalez, Jose Angel , Lu, Hua, Bailey, Chris and Alatise, Olayiwola M. (2017) A multiphysics modeling and experimental analysis of pressure contacts in power electronics applications. IEEE Transactions on Components, Packaging and Manufacturing Technology, 7 (6). pp. 893-900. doi:10.1109/TCPMT.2017.2688021

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), Rajaguru, Pushparajah and Bailey, Christopher (2017) An initial consideration of silicon carbide devices in pressure-packages. In: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 Sep 2016. Published in: 2016 IEEE Energy Conversion Congress and Exposition (ECCE) ISBN 9781509007370.

Lai, Wei, Chen, Mingyou, Ran, Li, Xu, Shengyou, Jiang, Nan, Wang, Xuemei, Alatise, Olayiwola M. and Mawby, P. A. (2017) Experimental investigations on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module. IEEE Transactions on Power Electronics, 32 (2). pp. 1431-1441. doi:10.1109/TPEL.2016.2546944

2016

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Nobeen, Nadeesh, Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Electrothermal considerations for power cycling in SiC technologies. In: 9th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 08-10 Mar 2016. Published in: Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems, 2016 ISBN 9783800741717.

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (2016) Improved testing capability of the model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (11). pp. 7823-7836.

Ortiz Gonzalez, Jose Angel, Ran, Li, Mohamed Motalab Ali Soli, A., Davletzhanova, Zarina, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Borong, Hu, Zheng, Zeng, Hai, Ren, Li, Hui and Shengyou, Xu (2016) Enabling high reliability power modules : a multidisciplinary task. In: International Symposium on 3D Power Electronics Integration and Manufacturing, McKimmon Center, Raleigh, NC, USA, 13-15 June 2016 ISBN 9781509029402.

Ortiz Gonzalez, Jose Angel, Aliyu, A. M., Alatise, Olayiwola M., Castellazzi, A., Ran, Li and Mawby, P. A. (Philip A.) (2016) Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectronics Reliability, 64 . pp. 434-439.

Lai, Wei, Chen, Mingyou, Ran, Li, Alatise, Olayiwola M., Xu, Shengyou and Mawby, P. A. (Philip A.) (2016) Low ΔTj stress cycle effects in IGBT power module die-attach lifetime modelling. IEEE Transactions on Power Electronics, 31 (9). pp. 6575-6585. doi:10.1109/TPEL.2015.2501540

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2016) Capacitor selection for modular multilevel converter. IEEE Transactions on Industry Applications, 52 (4). 3279 -3293. doi:10.1109/TIA.2016.2533620

Lai, Wei, Mawby, P. A. (Philip A.), Qin, Han, Alatise, Olayiwola M., Xu, Shengyou, Chen, Minyou and Ran, Li (2016) Study on the lifetime characteristics of power modules under power cycling conditions. IET Power Electronics, 9 (5). pp. 1045-1052. doi:10.1049/iet-pel.2015.0225

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (2016) Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4). pp. 2092-2102. doi:10.1109/TIE.2015.2500187

Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li and Mawby, P. A. (Philip A.) (2016) Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs. In: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), Glasgow, UK, 19-21 April 2016. Published in: 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) ISBN 9781785611889.

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2016) A model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (1). pp. 165-176. doi:10.1109/TPEL.2015.2411694

2015

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (2015) Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs. IEEE Transactions on Power Electronics, 30 (12). pp. 6978-6992. doi:10.1109/TPEL.2015.2388512

Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (Philip A.) (2015) Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63 (2). pp. 849-863. doi:10.1109/TIE.2015.2491880

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li and Mawby, P. A. (2015) The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching. IEEE Transactions on Power Electronics, 31 (6). pp. 4526-4535. doi:10.1109/TPEL.2015.2477831

Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792

Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Accurate analytical modeling for switching energy of PiN diodes reverse recovery. IEEE Transactions on Industrial Electronics, 62 (3). pp. 1461-1470. doi:10.1109/TIE.2014.2347936

Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. doi:10.1109/TIE.2014.2326999

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Analysis of power device failure under avalanche mode conduction. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 1833-1839. doi:10.1109/ICPE.2015.7168028

Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature. IEEE Transactions on Power Electronics, 30 (6). pp. 3345-3355. doi:10.1109/TPEL.2014.2333474

Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices. In: Energy Conversion Congress and Exposition (ECCE), 2015 IEEE, 20-24 Sept 2015, Montreal, QC. Published in: 2015 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2239-2246. doi:10.1109/ECCE.2015.7309975

Rajaguru, P., Lu, H., Bailey, C., Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2015) Electro-thermo-mechanical modelling and analysis of the press pack diode in power electronics. In: Thermal Investigations of ICs and Systems (THERMINIC), 2015 21st International Workshop on, Paris, France, 30 Sept - 2 Oct 2015. Published in: 2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) pp. 1-6. doi:10.1109/THERMINIC.2015.7389607

Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) pp. 1-9. doi:10.1109/EPE.2015.7309180

Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Gammon, P. M., Ran, Li and Mawby, P. A. (Philip A.) (2015) Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices : a technology evaluation. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) pp. 1-8. doi:10.1109/EPE.2015.7309093

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 560-566. doi:10.1109/ICPE.2015.7167839

Tang, Yuan, Ran, Li, Wyllie, P. B., Alatise, Olayiwola M., Yu, J. and Wang, X. M. (2015) Offshore low frequency AC transmission with back-to-back modular multilevel converter (MMC). In: 11th IET International Conference on AC and DC Power Transmission, Birmingham, UK, 10-12 Feb 2015. Published in: 11th IET International Conference on AC and DC Power Transmission 046 (8 .). ISBN 9781849199827. doi:10.1049/cp.2015.0020

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Davletzhanova, Zarina, Ran, Li, Michaelides, Alexandros and Mawby, P. A. (Philip A.) (2015) Physics-based modelling and experimental characterisation of parasitic turn-on in IGBTs. In: Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015. Published in: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) pp. 1-9. doi:10.1109/EPE.2015.7309179

2014

Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li and Mawby, P. A. (Philip A.) (2014) An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, Volume 2 (Number 3). pp. 517-528. doi:10.1109/JESTPE.2014.2307492

Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ran, Li and Mawby, P. A. (2014) Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs. IEEE Transactions on Electron Devices, Volume 61 (Number 7). pp. 2278-2286. doi:10.1109/TED.2014.2323152

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Temperature and dIDS/dt dependence of the switching energy of SiC schottky diodes in clamped inductive switching applications. Materials Science Forum, Volume 778-780 . pp. 816-819. doi:10.4028/www.scientific.net/MSF.778-780.816

Tang, Yuan, Ran, Li, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Capacitor selection for modular multilevel converter. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2080-2087. doi:10.1109/ECCE.2014.6953677

Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2014) Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2817-2823. doi:10.1109/ECCE.2014.6953780

Hamilton, Dean P., Jennings, M. R. (Michael R.), Sharma, Yogesh K., Fisher, Craig A., Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 4381-4387. doi:10.1109/ECCE.2014.6953720

Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Evans, L. and Mawby, P. A. (Philip A.) (2014) Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sept. 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 443-448. doi:10.1109/ECCE.2014.6953427

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes. In: Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, Lappeenranta, Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe) pp. 1-9. doi:10.1109/EPE.2014.6911007

2013

Alexakis, Petros, Alatise, Olayiwola M., Ran, Li and Mawby, P. A. (Philip A.) (2013) Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes. In: Power Electronics and Applications (EPE), 2013 15th European Conference on, Lille, France, 2-6 Sep 2013. Published in: 2013 15th European Conference on Power Electronics and Applications (EPE) pp. 1-9. doi:10.1109/EPE.2013.6631758

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (2013) On the performance of voltage source converters based on silicon carbide technology. In: 2013 35th International Telecommunications Energy Conference 'Smart Power and Efficiency' (INTELEC), Hamburg, Germany, 13-17 Oct 2013. Published in: Proceedings of 2013 35th International Telecommunications Energy Conference 'Smart Power and Efficiency' (INTELEC) ISBN 9783800735006.

Jahdi, Saeed, Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2013) The impact of silicon carbide technology on grid-connected Distributed Energy resources. In: 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE),, Lyngby, 6-9 Oct 2013. Published in: 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE), pp. 1-5. doi:10.1109/ISGTEurope.2013.6695233

2012

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P. and Mawby, P. A. (Philip A.) (2012) The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8). pp. 3826-3833. doi:10.1109/TPEL.2012.2183390

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2012) Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, Volume 33 (Number 7). pp. 1039-1041. doi:10.1109/LED.2012.2196671

Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Alatise, Olayiwola M., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2012) Improved energy efficiency using an IGBT/SiC-Schottky diode pair. In: International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, U.S.A., Sep 11-16, 2011. Published in: Materials Science Forum, 717-720 pp. 1147-1150. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.717-720.1147

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2012) The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range. In: 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012) , Bristol, UK., 27-29 Mar 2012. Published in: The conference prceedings for the IET Power Electronics, Machines and Drives : 27 - 29 March 2012 pp. 1-6. ISBN 9781849196161. doi:10.1049/cp.2012.0208

2011

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9). pp. 1269-1271. doi:10.1109/LED.2011.2159476

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George and Koh, Adrian (2011) Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.11 (No.1). pp. 157-163. doi:10.1109/TDMR.2010.2102026

Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair and Magill, Rob (2011) Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-6. ISSN 2165-4816. doi:10.1109/ISGTEurope.2011.6162688

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei and Mawby, P. A. (Philip A.) (2011) Super-junction trench MOSFETs for improved energy conversion efficiency. In: IEEE Innovative Smart Grid Technologies Conference (ISGT) , Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011. Published in: Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on pp. 1-5. ISSN 2165-4816. doi:10.1109/ISGTEurope.2011.6162631

Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian and Petkos, George (2011) Trench depth optimization for energy efficient discrete power trench MOSFETs. In: The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011. Published in: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European pp. 291-294. ISSN 1930-8876. doi:10.1109/ESSDERC.2011.6044177

2010

Alatise, Olayiwola M., Olsen, Sarah H., O'Neill, Anthony G. and Majhi, Prashant (2010) Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks. Microelectronic Engineering, Vol.87 (No.11). pp. 2196-2199. doi:10.1016/j.mee.2010.02.002

Alatise, Olayiwola M., Olsen, Sarah H. and O'Neill, Anthony G. (2010) Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics. Solid-State Electronics, Vol.54 (No.6). pp. 628-634. doi:10.1016/j.sse.2009.12.036

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Khan, Khalid Saeed, Parkin, Jim, Koh, Adrian and Rutter, Phil (2010) Repetitive avalanche cycling of low-voltage power trench n-MOSFETs. In: 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010. Published in: Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European pp. 273-276. ISSN 1930-8876. doi:10.1109/ESSDERC.2010.5618365

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Khan, Khalid Saeed, Koh, Adrian and Rutter, Philip (2010) Understanding linear-mode robustness in low-voltage trench power MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.10 (No.1). pp. 123-129. doi:10.1109/TDMR.2009.2036001

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Khan, Khalid Saeed, Parkin, Jim, Koh, Adrian and Rutter, Philip (2010) The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs. IEEE Transactions on Electron Devices, Vol.57 (No.7). pp. 1651-1658. doi:10.1109/TED.2010.2049062

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2010) The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3). pp. 327-335. doi:10.1016/j.sse.2009.09.029

Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Parkin, Jim, Khan, Khalid Saeed, Koh, Adrian and Rutter, Philip (2010) The impact of trench depth on the reliability of repetitively avalanched low-Voltage discrete power trench nMOSFETs. IEEE Electron Device Letters, Vol.31 (No.7). pp. 713-715. doi:10.1109/LED.2010.2048994

2009

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter. IEEE Transactions on Electron Devices, Vol.56 (No.12). pp. 3041-3048. doi:10.1109/TED.2009.2030721

Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G. and Majhi, Prashant (2009) Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks. IEEE Transactions on Electron Devices, Vol.56 (No.10). pp. 2277-2284. doi:10.1109/TED.2009.2028375

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, U.S.A., Dec 9-11, 2009. Published in: 2009 International Semiconductor Device Research Symposium (ISDRS 2009) pp. 1-2. doi:10.1109/ISDRS.2009.5378304

2008

Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2008) Improved analog performance of strained Si n-MOSFETs on thin SiGe strained relaxed buffers. In: 38th European Solid State Device Research Conference (ESSDERC), Edinburgh International Conference Centre, Edinburgh, United Kingdom, Sep 15-19, 2008. Published in: Proceedings of the 38th European Solid-State Device Research Conference (ESSDERC 2008) pp. 99-102. ISSN 1930-8876. doi:10.1109/ESSDERC.2008.4681708

Olsen, Sarah H., Dobrosz, Peter, Agaiby, Rouzet M.B., Tsang, Yuk Lun, Alatise, Olayiwola M., Bull, Steve J., O’Neill, Anthony G., Moselund, Kirsten E., Ionescu, Adrian M. and Majhi, Prashant (2008) Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing, Vol.11 (No.5-6). pp. 271-278. doi:10.1016/j.mssp.2009.06.003