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Mironov, O. A., DβAmbrumenil, Nicholas, Dobbie, A. (Andrew), Leadley, D. R. (David R.), Suslov, A. V. and Green, E. (2016) Fractional quantum Hall states in a Ge quantum well. Physical Review Letters, 116 (17). 176802. doi:10.1103/PhysRevLett.116.176802 ISSN 0031-9007.
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electronβphonon and holeβphonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002 ISSN 0038-1101.
Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.
Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392 ISSN 0003-6951.
Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164 ISSN 18626351.
Nguyen, Van Huy, Myronov, Maksym, Allred, Phil, Halpin, John E., Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2014) Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 121-124. doi:10.1109/ULIS.2014.6813913 ISSN 2330-5738.
Norris, D. J., Qiu, Y. , Dobbie, A. (Andrew), Myronov, Maksym and Walther, T. (Thomas) (2014) Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001). Journal of Applied Physics, Volume 115 (Number 1). Article number 012003. doi:10.1063/1.4837975 ISSN 0021-8979.
Burrows, Christopher W., Dobbie, A. (Andrew), Myronov, Maksym, Hase, Thomas P. A., Wilkins, Stuart B., Walker, Marc, Mudd, James J., Maskery, Ian, Lees, Martin R., McConville, C. F. (Chris F.), Leadley, D. R. (David R.) and Bell, Gavin R. (2013) Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates. Crystal Growth & Design, Volume 13 (Number 11). pp. 4923-4929. doi:10.1021/cg4011136 ISSN 1528-7483.
Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation. Journal of Applied Physics, Volume 114 (Number 15). Article: 154306. doi:10.1063/1.4825130 ISSN 0021-8979.
Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2013) Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, Volume 2 (Number 3). Q40-Q44. doi:10.1149/2.018303jss ISSN 2162-8769.
Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2013) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis, Volume 45 (Number 1). pp. 348-351. doi:10.1002/sia.4963 ISSN 0142-2421.
Qiu, Yi, Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Walther, T. (Thomas) (2013) Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy. Journal of Physics: Conference Series, Volume 471 . Article number 012031. doi:10.1088/1742-6596/471/1/012031 ISSN 1742-6596.
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2013) Hole-phonon energy loss rate in boron doped silicon. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 213-215. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523515
Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527
Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. and Berkutov, I. B. (2013) Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. In: 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013. Published in: 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) pp. 51-55. ISBN 9781467346696. doi:10.1109/ELNANO.2013.6552021
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. doi:10.1063/1.4763476 ISSN 0003-6951.
Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Volume 5 (Number 7). 071301. doi:10.1143/APEX.5.071301 ISSN 1882-0778.
Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1βxGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. doi:10.1021/ac202929x ISSN 0003-2700.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. doi:10.1016/j.tsf.2011.10.102 ISSN 0040-6090.
Walther, Thomas, Norris, David J., Qiu, Yang, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy. Physica Status Solidi (a), Volume 210 (Number 1). pp. 187-190. doi:10.1002/pssa.201200363 ISSN 0031-8965.
Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, Maksym and Leadley, D. R. (David R.) (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. doi:10.1149/2.063205jes ISSN 0013-4651.
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2012) Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (Article number 6222451). pp. 48-49. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222451
Nguyen, Van Huy, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2012) Understanding the role of the low temperature seed layer in the growth of low defect relaxed germanium layers on (111) silicon by reduced pressure CVD. In: 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012. Published in: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings Article number 622250. ISBN 9781457718625. doi:10.1109/ISTDM.2012.6222501
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. doi:10.1063/1.3670330 ISSN 0003-6951.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. doi:10.1109/TED.2011.2160679 ISSN 0018-9383.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. doi:10.1016/j.sse.2011.03.005 ISSN 0038-1101.
Zhylik, Alexei, Benediktovich, A., Ulyanenkov, Alexander P., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, Tatjana (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of applied physics, 109 (12). 123714. doi:10.1063/1.3597828 ISSN 0021-8979.
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. doi:10.1016/j.sse.2011.01.036 ISSN 0038-1101.
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. doi:10.1063/1.3579524 ISSN 0003-6951.
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.) (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. doi:10.1116/1.3530594 ISSN 1071-1023.
Myronov, Maksym, Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. doi:10.1016/j.jcrysgro.2010.10.133 ISSN 0022-0248.
Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. doi:10.1109/LED.2010.2089968 ISSN 0741-3106.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. doi:10.1016/j.tsf.2011.06.022 ISSN 0040-6090.
Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, A. (Andrew), Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, B. (Benjamin), Krom, Raymond et al.
(2011)
High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric.
Japanese Journal of Applied Physics, Vol.50
(No.4).
article no. 04DC17.
doi:10.1143/JJAP.50.04DC17
ISSN 0021-4922.
Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.) (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. doi:10.1088/0022-3727/44/5/055102 ISSN 0022-3727.
Zhylik, A., Rinaldi, F., Myronov, Maksym, Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. doi:10.1002/pssa.201184260 ISSN 1862-6300.
Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.) (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . doi:10.1088/0268-1242/25/8/085007 ISSN 0268-1242.
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. doi:10.1063/1.3311556 ISSN 0021-8979.
Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.) (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. doi:10.1149/1.3482159 ISSN 1099-0062.
Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. doi:10.1002/pssc.201000255 ISSN 1862-6351.
Leadley, D. R. (David R.), Dobbie, A. (Andrew), Shah, V. A. and Parsons, J. (2010) Introduction to novel materials for nanoscale CMOS. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 3-22. ISBN 9781848211803
Dobbie, A. (Andrew), Myronov, Maksym, Liu, Xue-Chao, Nguyen, Van Huy, Parker, Evan H. C. and Leadley, D. R. (David R.) (2010) Investigation of the thermal stability of strained Ge layers grown at low temperature by reduced-pressure chemical vapour deposition on Si0.2Ge0.8 relaxed buffers. In: 2010 MRS Spring Meeting & Exhibit, San Francisco, CA, 5-10 Apr 2010. Published in: MRS Proceedings, Vol.1252 pp. 104-106. doi:10.1557/PROC-1252-I04-06 ISSN 1946-4274.
Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, Maksym, Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803
Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen) (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. doi:10.1088/1742-6596/209/1/012061 ISSN 1742-6596.
Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, Maksym, Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. doi:10.1088/1742-6596/241/1/012044 ISSN 1742-6596.
Shah, V. A., Dobbie, A., Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John and Leadley, D. R. (David R.) (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. doi:10.1063/1.3023068 ISSN 0003-6951.
Dobbie, A. (Andrew), De Jaeger, B., Meuris, Marc, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2008) Channel backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10. ISBN 978-1-4244-1729-2. doi:10.1109/ULIS.2008.4527129
Dobbie, A. (Andrew) (2007) Investigation of the electrical properties of Siβ-ΓGeΓ channel pMOSFETs with high-ΞΊ dielectrics. PhD thesis, University of Warwick.
Dobbie, A. (Andrew), Nicholas, Gareth, Meuris, Marc, Parker, Evan H. C. and Whall, Terry E. (2007) Low temperature performance of deep submicron germanium pMOSFETs. In: International Workshop on Electron Devices and Semiconductor Technology, Tsinghua Univ, Beijing, China, 03-04 Jun 2007. Published in: Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, 2007. EDST 2007. pp. 62-65. ISBN 1424410983.
This list was generated on Tue Apr 23 14:20:35 2024 BST.