Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.). (2012) Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17). p. 172108. ISSN 0003-6951

Dobbie, A. (Andrew), Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2012) Growth of smooth, low-defect germanium layers on (111) silicon via an intermediate islanding process. Applied Physics Express, Vol.5 (No.7). 071301. ISSN 1882-0778

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, Richard, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2012) Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si1–xGex/Ge quantum well structures. Analytical Chemistry, Vol.84 (No.5). pp. 2292-2298. ISSN 0003-2700

Shah, V. A., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2012) Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8). pp. 3227-3231. ISSN 0040-6090

Morris, R. J. H. (Richard J. H.), Dowsett, M. G., Beanland, R., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.) (2012) O2+ probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells. Surface and Interface Analysis . n/a-n/a. ISSN 0142-2421 (In Press)

Dobbie, A. (Andrew), Nguyen, Van H., Morris, R. J. H. (Richard J. H.), Liu, Xue-Chao, Myronov, M. and Leadley, D. R. (David R.). (2012) Thermal stability of thin compressively strained Ge surface channels grown on relaxed Si0.2Ge0.8 reverse-graded buffers. Journal of The Electrochemical Society, Vol.159 (No.5). H490-H496. ISSN 0013-4651

Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25). Article: 251908. ISSN 0003-6951

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, Maksym, Whall, Terry E., Leadley, D. R. (David R.), Meuris, M., Hoffmann, T. and Claeys, C.. (2011) Low-frequency noise characterization of strained germanium pMOSFETs. IEEE Transactions on Electron Devices, Vol.58 (No.9). pp. 3132-3139. ISSN 0018-9383

Shah, Vishal Ajit, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.). (2011) High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1). pp. 189-194. ISSN 0038-1101

Zhylik, A., Benediktovich, A., Ulyanenkov, A., Guerault, H., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.) and Ulyanenkova, T.. (2011) High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates. Journal of Applied Physics, Vol.109 (No.12). p. 123714. ISSN 0021-8979

Liu, Xue-Chao, Myronov, Maksym, Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.). (2011) Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity. Solid-State Electronics, Vol.60 (No.1). pp. 42-45. ISSN 0038-1101

Muhonen, Juha, Prest, M. J., Prunnila, Mika, Gunnarsson, D., Shah, V. A., Dobbie, A. (Andrew), Myronov, M., Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.). (2011) Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18). p. 182103. ISSN 0003-6951

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D: Applied Physics, Vol.44 (No.5). 055102. ISSN 0022-3727

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Nguyen, Van H. and Leadley, D. R. (David R.). (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.29 (No.1). 011010. ISSN 1071-1023

Myronov, M., Liu, Xue-Chao, Dobbie, A. (Andrew) and Leadley, D. R. (David R.). (2011) Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD. Journal of Crystal Growth, Vol.318 (No.1). pp. 337-340. ISSN 0022-0248

Simoen, E. (Eddy), Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A. (Andrew), Myronov, M., Leadley, D. R. (David R.), Meuris, Marc, Hoffmann, T. and Claeys, C.. (2011) Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs. IEEE Electron Device Letters, Vol.32 (No.1). pp. 87-89. ISSN 0741-3106

Shah, V. A., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2011) Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22). pp. 7911-7917. ISSN 0040-6090

. (2011) High hole mobility in 65 nm strained Ge p-Channel field effect transistors with HfO2Gate dielectric. Japanese Journal of Applied Physics, Vol.50 (No.4). article no. 04DC17. ISSN 0021-4922

Liu, Xue-Chao, Myronov, M., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.) and Leadley, D. R. (David R.). (2011) High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics. Journal of Physics D : Applied Physics, Vol.44 (No.5). article no. 055102. ISSN 0022-3727

Zhylik, A., Rinaldi, F., Myronov, M., Saito, K., Menzel, S., Dobbie, A. (Andrew), Leadley, D. R. (David R.), Ulyanenkova, T., Feranchuk, I. D. (Ilya D.) and Ulyanenkov, Alexander P.. (2011) High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates. Physica Status Solidi. A: Applications and Materials Science , Vol.208 (No.11). pp. 2582-2586. ISSN 1862-6300

Dobbie, A. (Andrew), Myronov, M., Liu, Xue-Chao, Nguyen, Van H., Parker, E. H. C. and Leadley, D. R. (David R.). (2010) Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature. Semiconductor Science and Technology, Vol.25 (No. 8). article no. 085007 . ISSN 0268-1242

Shah, V. A., Dobbie, A. (Andrew), Myronov, M. and Leadley, D. R. (David R.). (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. ISSN 0021-8979

Myronov, M., Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H. and Leadley, D. R. (David R.). (2010) High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11). H388-H390. ISSN 1099-0062

Myronov, M., Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.) and Parker, Evan H. C.. (2010) Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3). pp. 952-955. ISSN 1862-6351

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Shah, V. A. and Parsons, J. (2010) Introduction to novel materials for nanoscale CMOS. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 3-22. ISBN 9781848211803

Dobbie, A. (Andrew), Myronov, M., Liu, Xue-Chao, Nguyen, Van Huy, Parker, Evan H. C. and Leadley, D. R. (David R.) (2010) Investigation of the thermal stability of strained Ge layers grown at low temperature by reduced-pressure chemical vapour deposition on Si0.2Ge0.8 relaxed buffers. In: 2010 MRS Spring Meeting & Exhibit, San Francisco, CA, 5-10 Apr 2010. Published in: MRS Proceedings, Vol.1252 pp. 104-106.

Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, M., Shah, V. A. and Parker, Evan H. C. (2010) Strained Si and Ge channels. In: Balestra, Francis, (ed.) Nanoscale CMOS : innovative materials, modeling, and characterization. London ; Hoboken, NJ: ISTE ; Wiley, pp. 69-126. ISBN 9781848211803

Norris, D. J., Walther, T. (Thomas), Cullis, A. G., Myronov, M., Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W., Meuris, Marc, Watling, J. R. and Asenov, A. (Asen). (2010) TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.209 . article no. 012061. ISSN 1742-6596

Norris, D. J., Ross, I. M., Cullis, A. G., Walther, T. (Thomas), Myronov, M., Dobbie, A. (Andrew), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Jaeger, B. De., Lee, W. C. and Meuris, Marc. (2010) TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology. Journal of Physics : Conference Series, Vol.241 . article no. 012044. ISSN 1742-6596

Shah, Vishal Ajit, Dobbie, A. (Andrew), Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John, 1980- and Leadley, D. R. (David R.). (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. ISSN 0003-6951

Dobbie, A. (Andrew), De Jaeger, B., Meuris, M., Whall, Terry E., Parker, E. H. C. and Leadley, D. R. (David R.) (2008) Channd backscattering characteristics of high performance germanium pMOSFETs. In: 9th International Conference on Ultimate Integration on Silicon, Univ Udine, Udine, Italy, Mar 13-14, 2008. Published in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 7-10.

Dobbie, A. (Andrew) (2007) Investigation of the electrical properties of Si₁-×Ge× channel pMOSFETs with high-κ dielectrics. PhD thesis, University of Warwick.

Dobbie, A. (Andrew), Nicholas, Gareth, Meuris, Marc, Parker, Evan H. C. and Whall, Terry E. (2007) Low temperature performance of deep submicron germanium pMOSFETs. In: International Workshop on Electron Devices and Semiconductor Technology, Tsinghua Univ, Beijing, PEOPLES R CHINA, JUN 03-04, 2007. Published in: 2007 International Workshop on Electron Devices and Semiconductor Technology pp. 62-65.