The Library
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Number of items: 35.
Diamond Light Source (Firm)
Bell, Gavin R., Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., McMitchell, Sean R. C., Sanchez, Ana M. and Aldous, James D. (2014) Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111). SPIN, 4 (4). pp. 1-8. 1440025. doi:10.1142/S2010324714400256 ISSN 2010-3247.
Engineering and Physical Sciences Research Council (EPSRC)
Linhart, Wojciech M., Gladysiewicz, Marta, Kopaczek, Jan, Rajpalke, Mohana, Ashwin, M. J., Veal, Timothy David and Kudrawiec, Robert (2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys. Journal of Physics D: Applied Physics, 50 (37). 375102. doi:10.1088/1361-6463/aa7e64 ISSN 0022-3727.
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., Mousley, Philip and Bell, Gavin R. (2017) Depth sensitive X-ray diffraction as a probe of buried half-metallic inclusions. Physica Status Solidi. B: Basic Research, 254 (2). doi:10.1002/pssb.201600543 ISSN 0370-1972.
Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.
Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025 ISSN 0022-0248.
Bomphrey, John James, Ashwin, M. J., Jones, T. S. (Tim S.) and Bell, Gavin R. (2015) The c(4×4)–a(1×3) surface reconstruction transition on InSb(001) : static versus dynamic conditions. Results in physics, Volume 5 . pp. 154-155. doi:10.1016/j.rinp.2015.05.004 ISSN 2211-3797.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Bell, Gavin R., Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., McMitchell, Sean R. C., Sanchez, Ana M. and Aldous, James D. (2014) Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111). SPIN, 4 (4). pp. 1-8. 1440025. doi:10.1142/S2010324714400256 ISSN 2010-3247.
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107 ISSN 1098-0121.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
Innovate UK
Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836 ISSN 0003-6951.
Narodowe Centrum Nauki (NCN)
Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836 ISSN 0003-6951.
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Narodowe Centrum Nauki [National Science Centre] (NCN)
Linhart, Wojciech M., Gladysiewicz, Marta, Kopaczek, Jan, Rajpalke, Mohana, Ashwin, M. J., Veal, Timothy David and Kudrawiec, Robert (2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys. Journal of Physics D: Applied Physics, 50 (37). 375102. doi:10.1088/1361-6463/aa7e64 ISSN 0022-3727.
State University of New York
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Suomen Akatemia [Academy of Finland]
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
United States. Department of Energy
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Bell, Gavin R., Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., McMitchell, Sean R. C., Sanchez, Ana M. and Aldous, James D. (2014) Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111). SPIN, 4 (4). pp. 1-8. 1440025. doi:10.1142/S2010324714400256 ISSN 2010-3247.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
United States. Department of Energy. Office of Basic Energy Sciences (OBES)
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
University College, London
Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107 ISSN 1098-0121.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
University of Liverpool
Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217 ISSN 0021-8979.
Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.
University of Warwick
Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
This list was generated on Wed Sep 27 09:35:27 2023 BST.
