2017

Linhart, Wojciech M., Gladysiewicz, Marta, Kopaczek, Jan, Rajpalke, Mohana, Ashwin, Mark J. (John), Veal, Timothy David and Kudrawiec, Robert (2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys. Journal of Physics D: Applied Physics . doi:10.1088/1361-6463/aa7e64 (In Press)

Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a

2016

Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., Mousley, P. and Bell, Gavin R. (2016) Depth sensitive X-ray diffraction as a probe of buried half-metallic inclusions. Physica Status Solidi. B: Basic Research . (In Press)

Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836

2015

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-245. doi:10.1016/j.jcrysgro.2015.02.093 (In Press)

Segercrantz, Natalie, Makkonen, Ilja, Slotte, Jonatan, Kujala, Jan, Veal, T. D. (Tim D.), Ashwin, M. J. and Tuomisto, Filip (2015) Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects. Journal of Applied Physics, 118 (8). pp. 1-9. 085708. doi:10.1063/1.4929751

Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025

Bomphrey, John James, Ashwin, M. J., Jones, T. S. (Tim S.) and Bell, Gavin R. (2015) The c(4×4)–a(1×3) surface reconstruction transition on InSb(001) : static versus dynamic conditions. Results in physics, Volume 5 . pp. 154-155. doi:10.1016/j.rinp.2015.05.004

2014

Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442

Kopaczek, Jan, Kudrawiec, Robert, Linhart, Wojciech, Rajpalke, Mohana K., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, Tim (2014) Low- and high-energy photoluminescence from GaSb1−xBixwith 0 <x≤ 0.042. Applied Physics Express, Volume 7 (Number 11). Article number 111202. doi:10.7567/APEX.7.111202

Bell, Gavin R., Burrows, Christopher W., Hase, Thomas P. A., Ashwin, M. J., McMitchell, Sean R. C., Sanchez, Ana M. and Aldous, James D. (2014) Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111). SPIN, 4 (4). pp. 1-8. 1440025. doi:10.1142/S2010324714400256

Kopaczek, Jan, Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). p. 112102. doi:10.1063/1.4895930

Kopaczek, J., Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (Tim D.) (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). Article number 112102. doi:10.1063/1.4895930

Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217

Buckeridge, John, Scanlon, David O., Veal, T. D. (Tim D.), Ashwin, M. J., Walsh, Aron and Catlow, C. R. A. (2014) N incorporation and associated localized vibrational modes in GaSb. Physical Review B (Condensed Matter and Materials Physics), 89 (1). pp. 1-9. 014107 . doi:10.1103/PhysRevB.89.014107

2013

Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077

Ashwin, M. J., Morris, R. J. H., Walker, David, Thomas, Pam A., Dowsett, M. G., Jones, T. S. and Veal, T. D. (2013) Molecular-beam epitaxy and lattice parameter of GaNxSb1−x : deviation from Vegard's law for x>0.02. Journal of Physics D: Applied Physics, Volume 46 (Number 26). Article number 264003. doi:10.1088/0022-3727/46/26/264003

Ashwin, M. J., Walker, David, Thomas, Pam A., Jones, T. S. and Veal, T. D. (2013) N incorporation in GaInNSb alloys and lattice matching to GaSb. Journal of Applied Physics, Volume 113 (Number 3). Article number 033502. doi:10.1063/1.4775745

Mudd, James J., Kybert, Nicholas J., Linhart, W. M., Buckle, L., Ashley, Tim, King, P. D. C., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Optical absorption by dilute GaNSb alloys : influence of N pair states. Applied Physics Letters, Volume 103 (Number 4). Article number 042110. doi:10.1063/1.4816519

Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, Mohana K., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J., Misiewicz, J. and Veal, T. D. (Tim D.) (2013) Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance. Applied Physics Letters, Volume 103 (Number 26). Article number 261907. doi:10.1063/1.4858967