Journal Article

Hu, Z. W., Thomas, Pam A., Gupta, Mool C. and Risk, William Paul. (1995) Multiple-crystal X-ray topographic characterization of periodically domain-inverted KTiOPO4 crystal. Applied Physics Letters, Vol.66 (No.1). pp. 13-15. ISSN 0003-6951

King, P. J. C., Breese, Mark B. H., 1966-, Smulders, P. J. M., Wilkinson, A. J., Booker, G. R., Parker, Evan H. C. and Grime, G. W. (Geoff W.). (1995) Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate. Applied Physics Letters, Vol.67 (No.24). pp. 3566-3568. ISSN 0003-6951

Rowlands, G. (George). (1995) Measurement of penetration depths in superconducting films. Applied Physics Letters, Vol.66 (No.24). p. 3355. ISSN 0003-6951

Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, Richard A. A. and McConville, C. F. (Chris F.). (1995) Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers. Applied Physics Letters, Vol.66 (No.21). pp. 2849-2851. ISSN 0003-6951

Whall, Terry E., Plews, Andrew D., Mattey, Nevil L., Phillips, P. J. (Peter J.) and Ekenberg, U.. (1995) Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells. Applied Physics Letters, Vol.66 (No.20). pp. 2724-2726. ISSN 0003-6951