Journal Article

Hu, Z. W., Thomas, Pam A., Gupta, Mool C. and Risk, William Paul (1995) Multiple-crystal X-ray topographic characterization of periodically domain-inverted KTiOPO4 crystal. Applied Physics Letters, Vol.66 (No.1). pp. 13-15. doi:10.1063/1.114165

King, P. J. C., Breese, Mark B. H., Smulders, P. J. M., Wilkinson, A. J., Booker, G. R., Parker, Evan H. C. and Grime, G. W. (1995) Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate. Applied Physics Letters, Vol.67 (No.24). pp. 3566-3568. doi:10.1063/1.115319

Rowlands, G. (George) (1995) Measurement of penetration depths in superconducting films. Applied Physics Letters, Vol.66 (No.24). p. 3355. doi:10.1063/1.113755

Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, Richard A. A. and McConville, C. F. (Chris F.) (1995) Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers. Applied Physics Letters, Vol.66 (No.21). pp. 2849-2851. doi:10.1063/1.113450

Whall, Terry E., Plews, Andrew D., Mattey, Nevil L., Phillips, P. J. (Peter J.) and Ekenberg, U. (1995) Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells. Applied Physics Letters, Vol.66 (No.20). pp. 2724-2726. doi:10.1063/1.113501