Journal Article

Davis, A. A., Jones, R. G., Falkenberg, G., Seehofer, L., Johnson, R. L. (Robert Lawrence), 1950- and McConville, C. F. (Chris F.). (1999) Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface. Applied Physics Letters, Vol.75 (No.13). pp. 1938-1940. ISSN 0003-6951

Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G.. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. ISSN 0003-6951

Kobayashi, T., McConville, C. F. (Chris F.), Dorenbos, G., Iwaki, M. and Aono, M.. (1999) Depth profile and lattice location analysis of Sb atoms in Si/Sb(-doped)/Si(001) structures using medium-energy ion scattering spectroscopy. Applied Physics Letters, Vol.74 (No.5). pp. 673-675. ISSN 0003-6951

McGregor, Barry M., Lander, Robert James Pascoe, Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E.. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures. Applied Physics Letters, Vol.74 (No.9). pp. 1245-1247. ISSN 0003-6951

Sadeghzadeh, Mohammad Ali, Parry, C. P., Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E.. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, Vol.74 (No.4). pp. 579-581. ISSN 0003-6951

Somfai, Ellák, Sander, Leonard M. (Leonard Michael) and Ball, R. C.. (1999) Scaling and crossovers in diffusion limited aggregation. Physical Review Letters, Vol.83 (No.26). pp. 5523-5526. ISSN 0031-9007