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Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. doi:10.1063/1.123689 ISSN 0003-6951.