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Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces
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UNSPECIFIED (2003) Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces. Surface Science, 523 (1-2). pp. 179-188. ISSN 0039-6028.
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Abstract
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have been studied using X-ray photoemission spectroscopy and high resolution electron energy loss spectroscopy coupled with space-charge layer calculations. Surfaces passivated by sulphur dosing followed by arsenic capping were annealed in vacuum to progressively remove the protective layers. For disordered surfaces with a sulphur coverage of almost 2 monolayers (ML), complex surface plasmon modes were observed due to strong electron accumulation at the surface, with downward band bending around 600 meV. For (2 x 1) reconstructed surfaces (sulphur coverage <1 ML), the band bending dropped to 325 meV. A 375 degreesC anneal was sufficient to remove all sulphur and regain a clean (4 x 1) indium-terminated surface with 200 meV downward band bending. We discuss the reconstruction-dependent surface accumulation and some aspects of 'electrical passivation' of surfaces. (C) 2002 Elsevier Science B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry Q Science > QC Physics |
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Journal or Publication Title: | Surface Science | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0039-6028 | ||||
Official Date: | 10 January 2003 | ||||
Dates: |
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Volume: | 523 | ||||
Number: | 1-2 | ||||
Number of Pages: | 10 | ||||
Page Range: | pp. 179-188 | ||||
Publication Status: | Published |
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