The Library
Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures
Tools
Colston, Gerard B. and Myronov, Maksym (2017) Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures. Semiconductor Science and Technology, 32 (11). 114005. doi:10.1088/1361-6641/aa8b2a ISSN 0268-1242.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1088/1361-6641/aa8b2a
Abstract
Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.
Item Type: | Journal Article | ||||||||
---|---|---|---|---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
Publisher: | Institute of Physics Publishing Ltd. | ||||||||
ISSN: | 0268-1242 | ||||||||
Official Date: | 4 October 2017 | ||||||||
Dates: |
|
||||||||
Volume: | 32 | ||||||||
Number: | 11 | ||||||||
Article Number: | 114005 | ||||||||
DOI: | 10.1088/1361-6641/aa8b2a | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |