Whall, Terry E., Plews, Andrew D., Mattey, Nevil L. and Parker, Evan H. C. (1994) Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05x0.3. Applied Physics Letters, Vol.65 (No.26). pp. 3362-3364. doi:10.1063/1.112392 ISSN 0003-6951.

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Abstract

The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05<=x<=0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Gamma-point values for the ground-state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Quantum wells, Semiconductor doping, Effective mass (Physics)
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	26 December 1994
Dates:	Date Event 26 December 1994 Published
Volume:	Vol.65
Number:	No.26
Page Range:	pp. 3362-3364
DOI:	10.1063/1.112392
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)

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