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Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05x0.3
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Whall, Terry E., Plews, Andrew D., Mattey, Nevil L. and Parker, Evan H. C. (1994) Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05x0.3. Applied Physics Letters, Vol.65 (No.26). pp. 3362-3364. doi:10.1063/1.112392
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Official URL: http://dx.doi.org/10.1063/1.112392
Abstract
The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05<=x<=0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Gamma-point values for the ground-state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Quantum wells, Semiconductor doping, Effective mass (Physics) | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 26 December 1994 | ||||
| Dates: |
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| Volume: | Vol.65 | ||||
| Number: | No.26 | ||||
| Page Range: | pp. 3362-3364 | ||||
| DOI: | 10.1063/1.112392 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access |
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