Whall, Terry E., Mattey, Nevil L., Plews, Andrew D., Phillips, P. J. (Peter J.), Mironov, O. A., Nicholas, R. J. and Kearney, M. J. (1994) Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. Applied Physics Letters, Vol.64 (No.3). pp. 357-359. doi:10.1063/1.111147 ISSN 0003-6951.

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Abstract

Measurements of Shubnikov de Haas oscillations in the temperature range 0.3–2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V−1 s−1 at a carrier sheet density of 2.2×1011 cm−2 is limited by interface roughness and short-range interface charge scattering.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Quantum wells, Effective mass (Physics), Electron mobility
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	17 January 1994
Dates:	Date Event 17 January 1994 Published
Volume:	Vol.64
Number:	No.3
Page Range:	pp. 357-359
DOI:	10.1063/1.111147
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)

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