Smith, D. W., Emeleus, C. J., Kubiak, Richard A. A., Parker, Evan H. C. and Whall, Terry E. (1992) Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases. Applied Physics Letters, Vol.61 (No.12). pp. 1453-1455. doi:10.1063/1.107515 ISSN 0003-6951.

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Abstract

We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Quantum wells, Electron mobility, Molecular beam epitaxy
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	21 September 1992
Dates:	Date Event 21 September 1992 Published
Volume:	Vol.61
Number:	No.12
Page Range:	pp. 1453-1455
DOI:	10.1063/1.107515
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)
Funder:	Si Towards 2000

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