Gardelis, S., Rimmer, J. S., Dawson, P. (Philip), Hamilton, B. (Bruce), Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C. (1991) Evidence for quantum confinement in the photoluminescence of porous Si and SiGe. Applied Physics Letters, Vol.59 (No.17). pp. 2118-2120. doi:10.1063/1.106098 ISSN 0003-6951.

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Abstract

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silison alloys, Germanium alloys, Quantum wells, Photoluminescence, Metals -- Anodic oxidation, Porous materials
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	21 October 1991
Dates:	Date Event 21 October 1991 Published
Volume:	Vol.59
Number:	No.17
Page Range:	pp. 2118-2120
DOI:	10.1063/1.106098
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)
Funder:	Science and Engineering Research Council (Great Britain) (SERC)

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