McQuaid, S. A., Newman, R.C., Tucker, J. H., Lightowlers, E. C., Kubiak, Richard A. A. and Goulding, M. (1991) Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C. Applied Physics Letters, Vol.58 (No.25). pp. 2933-2935. doi:10.1063/1.104726

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Abstract

Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Atomic hydrogen, Electron transport, Boron compounds, Silicon compounds, Molecular beam epitaxy
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	24 June 1991
Dates:	Date Event 24 June 1991 Published
Volume:	Vol.58
Number:	No.25
Page Range:	pp. 2933-2935
DOI:	10.1063/1.104726
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Science and Engineering Research Council (Great Britain) (SERC)

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