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Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C
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McQuaid, S. A., Newman, R.C., Tucker, J. H., Lightowlers, E. C., Kubiak, Richard A. A. and Goulding, M. (1991) Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C. Applied Physics Letters, Vol.58 (No.25). pp. 2933-2935. doi:10.1063/1.104726 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.104726
Abstract
Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Atomic hydrogen, Electron transport, Boron compounds, Silicon compounds, Molecular beam epitaxy | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 24 June 1991 | ||||
Dates: |
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Volume: | Vol.58 | ||||
Number: | No.25 | ||||
Page Range: | pp. 2933-2935 | ||||
DOI: | 10.1063/1.104726 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Science and Engineering Research Council (Great Britain) (SERC) |
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