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Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C

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McQuaid, S. A., Newman, R.C., Tucker, J. H., Lightowlers, E. C., Kubiak, Richard A. A. and Goulding, M. (1991) Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C. Applied Physics Letters, Vol.58 (No.25). pp. 2933-2935. doi:10.1063/1.104726 ISSN 0003-6951.

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Official URL: http://dx.doi.org/10.1063/1.104726

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Abstract

Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Atomic hydrogen, Electron transport, Boron compounds, Silicon compounds, Molecular beam epitaxy
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 24 June 1991
Dates:
DateEvent
24 June 1991Published
Volume: Vol.58
Number: No.25
Page Range: pp. 2933-2935
DOI: 10.1063/1.104726
Status: Peer Reviewed
Access rights to Published version: Open Access (Creative Commons)
Funder: Science and Engineering Research Council (Great Britain) (SERC)

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