Mattey, Nevil L., Dowsett, M. G., Parker, Evan H. C., Whall, Terry E., Taylor, S. (Stephen) and Zhang, J. F. (1990) p-type delta-doped layers in silicon: structural and electronic properties. Applied Physics Letters, Vol.57 (No.16). pp. 1648-1650. doi:10.1063/1.104076

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Abstract

We report on the properties of p-type delta-doped layers prepared in molecular beam epitaxy-Si by growth interruption and evaporation of elemental B. Secondary-ion mass spectrometry measurements at several primary ion energies have been used to show that the full width at half maximum is ~2 nm. Hall measurements confirm that the layers are completely activated at 300 K with a mobility of 30±5 cm2/V s for a carrier density of (9±2)×1012 cm−2. At temperatures below 70 K nonmetallic behavior is observed which we have attributed to conduction between impurity states. It is concluded that the critical acceptor separation for the Mott metal-insulator transition in this system is significantly less than the value found in uniformly doped Si:B.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon compounds, Boron compounds, Molecular beam epitaxy, Ion implantation, Electron mobility
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	15 October 1990
Dates:	Date Event 15 October 1990 Published
Volume:	Vol.57
Number:	No.16
Page Range:	pp. 1648-1650
DOI:	10.1063/1.104076
Status:	Peer Reviewed
Access rights to Published version:	Open Access

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