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p-type delta-doped layers in silicon: structural and electronic properties
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Mattey, Nevil L., Dowsett, M. G., Parker, Evan H. C., Whall, Terry E., Taylor, S. (Stephen) and Zhang, J. F. (1990) p-type delta-doped layers in silicon: structural and electronic properties. Applied Physics Letters, Vol.57 (No.16). pp. 1648-1650. doi:10.1063/1.104076 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.104076
Abstract
We report on the properties of p-type delta-doped layers prepared in molecular beam epitaxy-Si by growth interruption and evaporation of elemental B. Secondary-ion mass spectrometry measurements at several primary ion energies have been used to show that the full width at half maximum is ~2 nm. Hall measurements confirm that the layers are completely activated at 300 K with a mobility of 30±5 cm2/V s for a carrier density of (9±2)×1012 cm−2. At temperatures below 70 K nonmetallic behavior is observed which we have attributed to conduction between impurity states. It is concluded that the critical acceptor separation for the Mott metal-insulator transition in this system is significantly less than the value found in uniformly doped Si:B.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon compounds, Boron compounds, Molecular beam epitaxy, Ion implantation, Electron mobility | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 15 October 1990 | ||||
Dates: |
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Volume: | Vol.57 | ||||
Number: | No.16 | ||||
Page Range: | pp. 1648-1650 | ||||
DOI: | 10.1063/1.104076 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) |
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