Zhang, J. P., Tang, Y. S., Robinson, A. K., Bussmann, U., Hemment, P. L. F. (Peter L. F.), Sealy, B., Newstead, S. M. (Simon M.), Powell, A. R., Whall, Terry E. and Parker, Evan H. C. (1990) Behavior of high dose O+-implanted Si/Ge/Si structures. Applied Physics Letters, Vol.57 (No.9). pp. 890-892. doi:10.1063/1.103395 ISSN 0003-6951.

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Abstract

The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x-ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x<2, with no evidence for Ge—O bonding.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon compounds, Germanium compounds, Ion implantation, Oxygen, Heterostructures, Semiconductors
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	27 August 1990
Dates:	Date Event 27 August 1990 Published
Volume:	Vol.57
Number:	No.9
Page Range:	pp. 890-892
DOI:	10.1063/1.103395
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)
Funder:	Science and Engineering Research Council (Great Britain) (SERC)

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