
The Library
Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films
Tools
Mousley, Philip, Burrows, Christopher W., Ashwin, M. J., Sánchez, Ana M., Lazarov, V. K. and Bell, Gavin R. (2018) Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films. Journal of Crystal Growth, 498 . pp. 391-398. doi:10.1016/j.jcrysgro.2018.07.006 ISSN 0022-0248.
|
PDF
WRAP-growth-characterisation-MnSb(0001)InGaAs(111)-epitaxial-films-Mousley-2018.pdf - Accepted Version - Requires a PDF viewer. Download (7Mb) | Preview |
Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2018.07.006
Abstract
MnSb layers have been grown on In x Ga 1 − x As(111)A virtual substrates using molecular beam epitaxy (MBE). The effects of both substrate temperature ( T sub ) and Sb/Mn beam flux ratio ( J Sb/Mn ) were investigated. The sur- face morphology, layer and interface structural quality, and magnetic prop- erties have been studied for a 3 × 3 grid of T sub and J Sb/Mn values. Com- pared to known optimal MBE conditions for MnSb/GaAs(111) [ T sub =415 ◦ C, J Sb/Mn =6.5], a lower substrate temperature is required for sharp interface for- mation when growing MnSb on In 0 . 48 Ga 0 . 52 As(111)A [ T sub =350 ◦ C, J Sb/Mn =6.5]. At high flux ratio ( J Sb/Mn =9.5) elemental Sb is readily incorporated into MnSb films. At higher substrate temperatures and lower flux ratios, (In,Ga)Sb inclusions in the MnSb are formed, as well as MnAs inclusions within the substrate. The Sb and (In,Ga)Sb inclusions are epitaxial, while MnAs in- clusions are endotaxial, i.e. all have a crytallographic relationship to the substrate and epilayer. MBE optimisation towards different device struc- tures is discussed along with results from a two-stage growth scheme.
Item Type: | Journal Article | ||||||||
---|---|---|---|---|---|---|---|---|---|
Subjects: | Q Science > QD Chemistry | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Library of Congress Subject Headings (LCSH): | Epitaxy, Crystal growth | ||||||||
Journal or Publication Title: | Journal of Crystal Growth | ||||||||
Publisher: | Elsevier BV, North-Holland | ||||||||
ISSN: | 0022-0248 | ||||||||
Official Date: | 15 September 2018 | ||||||||
Dates: |
|
||||||||
Volume: | 498 | ||||||||
Page Range: | pp. 391-398 | ||||||||
DOI: | 10.1016/j.jcrysgro.2018.07.006 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 17 July 2018 | ||||||||
Date of first compliant Open Access: | 10 July 2019 | ||||||||
Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
![]() |
View Item |
Downloads
Downloads per month over past year