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Data for Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films
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Mousley, Philip, Burrows, Christopher W., Ashwin, M. J., Sánchez, Ana M., Lazarov, V. K. and Bell, Gavin R. (2018) Data for Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films. [Dataset]
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Archive (ZIP) (Collection of data)
px-170718-wrap--xrd-data_mnsb-ingaas_jcg.zip - Published Version Available under License Creative Commons Attribution 4.0. Download (631Kb) |
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Plain Text (Description of data)
XRD-data_MnSb-InGaAs_READ-ME.txt - Published Version Available under License Creative Commons Attribution 4.0. Download (1054b) |
Official URL: http://wrap.warwick.ac.uk/104949
Abstract
MnSb layers have been grown on In x Ga 1 − x As(111)A virtual substrates using molecular beam epitaxy (MBE). The effects of both substrate temperature ( T sub ) and Sb/Mn beam flux ratio ( J Sb/Mn) were investigated. The sur- face morphology, layer and interface structural quality, and magnetic prop- erties have been studied for a 3 × 3 grid of T sub and J Sb/Mn values. Com- pared to known optimal MBE conditions for MnSb/GaAs(111) [ T sub =415 ◦ C, J Sb/Mn =6.5], a lower substrate temperature is required for sharp interface formation when growing MnSb on In 0 . 48 Ga 0 . 52 As(111)A [ T sub =350 ◦ C, J Sb/Mn =6.5]. At high flux ratio ( J Sb/Mn =9.5) elemental Sb is readily incorporated into MnSb films. At higher substrate temperatures and lower flux ratios, (In,Ga)Sb inclusions in the MnSb are formed, as well as MnAs inclusions within the substrate. The Sb and (In,Ga)Sb inclusions are epitaxial, while MnAs in- clusions are endotaxial, i.e. all have a crytallographic relationship to the substrate and epilayer. MBE optimisation towards different device struc- tures is discussed along with results from a two-stage growth scheme.
| Item Type: | Dataset | |||||||||
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| Subjects: | Q Science > QC Physics | |||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||
| Type of Data: | Experimental data | |||||||||
| Library of Congress Subject Headings (LCSH): | Molecular beam epitaxy, Crystal growth, Ferromagnetic materials | |||||||||
| Publisher: | University of Warwick, Department of Physics | |||||||||
| Official Date: | 20 July 2018 | |||||||||
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| Status: | Not Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Media of Output (format): | .csv | |||||||||
| Access rights to Published version: | Open Access (Creative Commons) | |||||||||
| Description: | Data folder consists of 12 comma separated variable (csv) files containing out-of-plane symmetric diffraction data recorded at the University of Warwick using K-Alpha1 radiation (wavelength 1.5405980 Å). These files are in reciprocal space co-ordinate format i.e. recorded X-ray intensity Vs Qz (Å^-1). The growth conditions of each sample is noted in the file naming system in the format 'Jvalue-Tsub_Qz', where Jvalue is the flux ratio and Tsub is the substrate temperature in degrees celsius (°C) . For three of the files the prefix '2S_' is used to denote that these samples were grown with the 2-stage growth method. |
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| Date of first compliant deposit: | 20 July 2018 | |||||||||
| Date of first compliant Open Access: | 20 July 2018 | |||||||||
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