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Data for Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaics
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Wu, M., Murphy, John D., Jiang, J., Wilshaw, P. R. and Wilkinson, A. J. (2018) Data for Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaics. [Dataset]
Plain Text (Readme file)
2018-09-06 readme text for WRAP.txt - Published Version Available under License Creative Commons Attribution 4.0. Download (562b) |
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Microsoft Excel (Data behind Figure 5 in the related paper)
2018-09-06 Dataset for WRAP.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (385Kb) |
Official URL: http://wrap.warwick.ac.uk/107829
Abstract
Silicon wafers for photovoltaics could be produced without kerf loss by rolling, provided sufficient control of defects such as dislocations can be achieved. Here we report a study using mainly high resolution electron backscatter diffraction (HR-EBSD) of the microstructural evolution of Siemens polycrystalline silicon feedstock during a series of processes designed to mimic high temperature rolling. The starting material is heavily textured and annealing at 1400 ˚C results in 90% recrystallization and a reduction in average geometrically necessary dislocation (GND) density from >1014 m-2 to 1013 m-2. Subsequent compression at 1150 ˚C – analogous to rolling – produces subgrain boundaries seen as continuous curved high GND content linear features spanning grain interiors. Post-deformation annealing at 1400 ˚C facilitates a secondary recrystallization process, resulting in large grains typically of 100 µm diameter. HR-EBSD gives the final average GND density in as 3.2 1012 m-2 . This value is considerably higher than the dislocation density of 5 1010 m-2 from etch pit counting, so the discrepancy was investigated by direct comparison of GND maps and etch pit patterns. The GND map from HR-EBSD gives erroneously high values at the method’s noise floor (~1012 m-2) in regions with low dislocation densities.
Item Type: | Dataset | ||||||||||||
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Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||
Type of Data: | Experimental data | ||||||||||||
Library of Congress Subject Headings (LCSH): | Polycrystals, Microstructure, Silicon, Photovoltaic power generation, Electrons -- Backscattering, Diffraction | ||||||||||||
Publisher: | University of Warwick, School of Engineering | ||||||||||||
Official Date: | August 2018 | ||||||||||||
Dates: |
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Status: | Not Peer Reviewed | ||||||||||||
Publication Status: | Published | ||||||||||||
Media of Output (format): | Single XLSX file | ||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||
Copyright Holders: | University of Warwick | ||||||||||||
Description: | The dataset (a single file in XLSX format) contains the data behind Figure 5 in the paper. Captions to the figure is given in the paper. Abbreviations, variables and methods used are defined in the paper. Please address any queries to john.d.murphy@warwick.ac.uk. |
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Date of first compliant deposit: | 6 September 2018 | ||||||||||||
Date of first compliant Open Access: | 6 September 2018 | ||||||||||||
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