Cheng, T. C. (Tze Chiang) (1985) A design study of high power microwave GaAs FET amplifier. PhD thesis, University of Warwick.

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Abstract

An 8 GHz 10 Watt G&As FET power amplifier has been developed to replace the TWT in the digital microwave system. For a single bit stream of 91*04 Mbit/s, the residual bit error rate at 40 dBm output power level is 1.0 X lO-^ compared with 1.0 X 10for that of TWT.
For minimizing the non-linearity of the amplifier, the constant gate voltage biasing network has been used and optimized, with the aid of automatic non-linearity measurement technique developed in the thesis.

The AI^AM conversion ratio is 0.375 dB/dB and PM^AM is 0.84°/dB at rated output power level of the amplifier.
The total mean-time-between-failure of the amplifier is
350,000 hours. The negative resistance effects in the power GaAs FET is also studied.

Item Type:	Thesis or Dissertation (PhD)
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Library of Congress Subject Headings (LCSH):	Gallium arsenide, Field-effect transistors, Gallium arsenide semiconductors
Official Date:	March 1985
Dates:	Date Event March 1985 UNSPECIFIED
Institution:	University of Warwick
Theses Department:	Department of Engineering
Thesis Type:	PhD
Publication Status:	Unpublished
Supervisor(s)/Advisor:	Schurmer, H. V
Sponsors:	General Electric Company (Great Britain) ; Standard Telephones and Cables (London, England) ; Northern Telecom Limited ; Bell-Northern Research
Format of File:	pdf
Extent:	v, 234 leaves : illustrations
Language:	eng

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