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A design study of high power microwave GaAs FET amplifier

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Cheng, T. C. (Tze Chiang) (1985) A design study of high power microwave GaAs FET amplifier. PhD thesis, University of Warwick.

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Official URL: http://webcat.warwick.ac.uk/record=b3226537~S15

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Abstract

An 8 GHz 10 Watt G&As FET power amplifier has been developed to replace the TWT in the digital microwave system. For a single bit stream of 91*04 Mbit/s, the residual bit error rate at 40 dBm output power level is 1.0 X lO-^ compared with 1.0 X 10for that of TWT.
For minimizing the non-linearity of the amplifier, the constant gate voltage biasing network has been used and optimized, with the aid of automatic non-linearity measurement technique developed in the thesis.

The AI^AM conversion ratio is 0.375 dB/dB and PM^AM is 0.84°/dB at rated output power level of the amplifier.
The total mean-time-between-failure of the amplifier is
350,000 hours. The negative resistance effects in the power GaAs FET is also studied.

Item Type: Thesis (PhD)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Library of Congress Subject Headings (LCSH): Gallium arsenide, Field-effect transistors, Gallium arsenide semiconductors
Official Date: March 1985
Dates:
DateEvent
March 1985UNSPECIFIED
Institution: University of Warwick
Theses Department: Department of Engineering
Thesis Type: PhD
Publication Status: Unpublished
Supervisor(s)/Advisor: Schurmer, H. V
Sponsors: General Electric Company (Great Britain) ; Standard Telephones and Cables (London, England) ; Northern Telecom Limited ; Bell-Northern Research
Format of File: pdf
Extent: v, 234 leaves : illustrations
Language: eng

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