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Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys
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Linhart, Wojciech W.M., Rajpalke, Mohana M.K., Birkett, Max, Walker, David, Ashwin, M. J. and Veal, T. D. (2018) Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. Journal of Physics D: Applied Physics, 52 (4). 045105. doi:10.1088/1361-6463/aaeec9 ISSN 0022-3727.
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WRAP-Nitrogen-pair-induced-temperature-insensitivity-band-gap-GaNSb-alloys-Walker-2018.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution. Download (1686Kb) | Preview |
Official URL: http://dx.doi.org/10.1088/1361-6463/aaeec9
Abstract
The temperature dependence of the band gap of GaN x Sb1−x films with x ≤ 1.3% has been studied in the 1.1–3.3 m (0.35–1.1 eV) range using infrared absorption spectroscopy between 4.2 and 300 K. As with other dilute nitride semiconductors, the temperature dependence of the band gap is reduced by alloying with nitrogen when compared to the host binary compound. However, for GaNSb, the smallest variation of the band gap with temperature is observed for samples with the lowest N content for which the band gap is almost totally insensitive to temperature changes. This contrasts with the more widely studied GaN x As1−x alloys in which the band gap variation with temperature decreases with increasing N content. The temperature-dependent absorption spectra are simulated within the so-called band anticrossing model of the interaction between the extended conduction band states of the GaSb and the localized states associated with the N atoms. The N next-nearest neighbor pair states are found to be responsible for the temperature insensitivity of the band gap of the GaNSb alloys as a result of their proximity to the conduction band edge giving them a more pronounced role than in GaNAs alloys.
| Item Type: | Journal Article | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||
| Library of Congress Subject Headings (LCSH): | Alloys -- Industrial applications, Energy gap (Physics), Infrared spectroscopy, Semiconductors | |||||||||
| Journal or Publication Title: | Journal of Physics D: Applied Physics | |||||||||
| Publisher: | IOP Publishing | |||||||||
| ISSN: | 0022-3727 | |||||||||
| Official Date: | 21 November 2018 | |||||||||
| Dates: |
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| Volume: | 52 | |||||||||
| Number: | 4 | |||||||||
| Article Number: | 045105 | |||||||||
| DOI: | 10.1088/1361-6463/aaeec9 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Access rights to Published version: | Open Access (Creative Commons) | |||||||||
| Date of first compliant deposit: | 21 November 2018 | |||||||||
| Date of first compliant Open Access: | 21 November 2018 | |||||||||
| RIOXX Funder/Project Grant: |
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