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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
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UNSPECIFIED (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. In: Spring Meeting of the European-Materials-Research-Society, STRASBOURG, FRANCE, JUN 05-08, 2001. Published in: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 89 (1-3). pp. 444-448. ISSN 0921-5107.
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Abstract
We briefly review recent work on enhancements in transconductance. maximum voltage gain. carrier mobility and velocity overshoot in Si/S0.64Ge0.36/Si p-channel metal-oxide-semiconductor devices and then discuss the superior 1/f noise properties in more detail. The results indicate the growth and processing challenges which must be met in order to improve device performance. (C) 2002 Elsevier Science B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | ||||
Publisher: | ELSEVIER SCIENCE SA | ||||
ISSN: | 0921-5107 | ||||
Official Date: | 14 February 2002 | ||||
Dates: |
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Volume: | 89 | ||||
Number: | 1-3 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 444-448 | ||||
Publication Status: | Published | ||||
Title of Event: | Spring Meeting of the European-Materials-Research-Society | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | JUN 05-08, 2001 |
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