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Highly strained III–V–V coaxial nanowire quantum wells with strong carrier confinement
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Zhang, Yunyan, Davis, George, Fonseka, H. A., Velichko, Anton, Gustafsson, Anders, Godde, Tillmann, Saxena, Dhruv, Aagesen, Martin, Parkinson, Patrick W., Gott, Andrew L., Huo, Suguo, Sánchez, Ana M., Mowbray, David J. and Liu, Huiyun (2019) Highly strained III–V–V coaxial nanowire quantum wells with strong carrier confinement. ACS Nano, 13 (5). pp. 5931-5938. doi:10.1021/acsnano.9b01775 ISSN 1936-0851.
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Official URL: http://dx.doi.org/10.1021/acsnano.9b01775
Abstract
Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III–V–V QWs, which are highly suitable as the platform for NW emitters.
Item Type: | Journal Article | |||||||||||||||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Quantum wells, Nanowires | |||||||||||||||||||||
Journal or Publication Title: | ACS Nano | |||||||||||||||||||||
Publisher: | American Chemical Society | |||||||||||||||||||||
ISSN: | 1936-0851 | |||||||||||||||||||||
Official Date: | 28 May 2019 | |||||||||||||||||||||
Dates: |
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Volume: | 13 | |||||||||||||||||||||
Number: | 5 | |||||||||||||||||||||
Page Range: | pp. 5931-5938 | |||||||||||||||||||||
DOI: | 10.1021/acsnano.9b01775 | |||||||||||||||||||||
Status: | Peer Reviewed | |||||||||||||||||||||
Publication Status: | Published | |||||||||||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | |||||||||||||||||||||
Date of first compliant deposit: | 17 May 2019 | |||||||||||||||||||||
Date of first compliant Open Access: | 17 May 2019 | |||||||||||||||||||||
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