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Data for Minority carrier lifetime in indium doped silicon for photovoltaics
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Murphy, John D., Pointon, A. I., Grant , Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Data for Minority carrier lifetime in indium doped silicon for photovoltaics. [Dataset]
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Microsoft Excel (Data relating to figures)
2019-06-10 Dataset.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (237Kb) |
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Plain Text (Readme file)
2019-06-10 readme text for WRAP.txt - Published Version Available under License Creative Commons Attribution 4.0. Download (584b) |
Official URL: https://wrap.warwick.ac.uk/118203
Abstract
For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.
| Item Type: | Dataset | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Type of Data: | Experimental data | |||||||||
| Library of Congress Subject Headings (LCSH): | Photovoltaic cells, Doped semiconductors, Indium | |||||||||
| Publisher: | University of Warwick, School of Engineering | |||||||||
| Official Date: | 3 July 2019 | |||||||||
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| Status: | Not Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Media of Output (format): | .xlsx | |||||||||
| Access rights to Published version: | Open Access (Creative Commons) | |||||||||
| Copyright Holders: | University of Warwick, John D. Murphy ; john.d.murphy@warwick.ac.uk | |||||||||
| Description: | The dataset (a single file in XLSX format) contains the data behind the figures in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper. |
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| Date of first compliant deposit: | 3 July 2019 | |||||||||
| Date of first compliant Open Access: | 3 July 2019 | |||||||||
| RIOXX Funder/Project Grant: |
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