Al-Amin, Mohammad, Grant, Nicholas E., Pointon, A. I. and Murphy, J. D. (2019) Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations. Physica Status Solidi A, 216 (17). 1900257. doi:10.1002/pssa.201900257 ISSN 1862-6300.

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Abstract

To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lifetimes accurately, and this requires surface recombination to be well controlled and, ideally, minimized. Good surface passivation can result from thermal oxidation or by deposition of dielectrics (e.g. Al2O3, SiNx, amorphous Si), but these forms of passivation can modify the lifetime of the material under investigation. Various schemes can passivate surfaces on a temporary basis without modifying the bulk, and, in this paper, the virtues of the iodine‐ethanol temporary surface passivation scheme are explored. A procedure for preparing the wafer surfaces prior to passivation is developed. For the optimised pre‐treatment, a series of experiments on 3–5 Ωcm float‐zone wafers cut from the same ingot with different thicknesses is conducted. This enables the material's bulk lifetime to be measured at 1015 cm−3 injection as ≈46 ms, with the surface recombination velocity being 6.5 ± 0.3 cm s−1. Iodine‐ethanol passivation is then compared to a recently developed superacid‐derived temporary passivation scheme. Although the latter is superior on (100)‐orientation substrates, iodine‐ethanol performs much better on (111)‐orientation substrates, making it a better choice for (111)‐orientation wafers, such as those used for power devices.

Item Type:	Journal Article
Subjects:	Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH):	Silicon -- Research, Passivity (Chemistry), Surface chemistry, Electrochemical analysis, Superacids, Iodine, Ethanol
Journal or Publication Title:	Physica Status Solidi A
Publisher:	Wiley-VCH Verlag GMBH
ISSN:	1862-6300
Official Date:	September 2019
Dates:	Date Event September 2019 Published 17 June 2019 Available 14 June 2019 Accepted
Volume:	216
Number:	17
Article Number:	1900257
DOI:	10.1002/pssa.201900257
Status:	Peer Reviewed
Publication Status:	Published
Reuse Statement (publisher, data, author rights):	"This is the peer reviewed version of the following article: Al-Amin, M. , Grant, N. E., Pointon, A. I. and Murphy, J. D. (2019), Iodine‐Ethanol Surface Passivation for Measurement of Millisecond Carrier Lifetimes in Silicon Wafers with Different Crystallographic Orientations. Phys. Status Solidi A. Accepted Author Manuscript, which has been published in final form at 10.1002/pssa.201900257. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions."
Access rights to Published version:	Restricted or Subscription Access
Date of first compliant deposit:	18 June 2019
Date of first compliant Open Access:	17 June 2020
RIOXX Funder/Project Grant:	Project/Grant ID RIOXX Funder Name Funder ID EP/M024911/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/R511808/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/J01768X/2 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/N509796/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266
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